Cypress Semiconductor Corp S26KS256SDABHN030
- Part Number:
- S26KS256SDABHN030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235309-S26KS256SDABHN030
- Description:
- IC 256M FLASH MEMORY
- ECAD Model:
-
- Datasheet:
- S26KS256SDABHN030
Cypress Semiconductor Corp S26KS256SDABHN030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS256SDABHN030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2017
- SeriesHyperFlash™ KS
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)2V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mb 32M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization32MX8
- Memory Width8
- Memory Density268435456 bit
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS256SDABHN030 Overview
The package or case for this electronic component is a 24-VBGA, which stands for Very Thin Ball Grid Array. This type of package is commonly used for integrated circuits and other small electronic devices. The operating temperature for this component is -40°C to 125°C, making it suitable for use in a wide range of environments. The terminal position is located at the bottom of the package, and the terminal pitch, or distance between each terminal, is 1mm. This component also follows the JESD-30 Code, specifically R-PBGA-B24, which is a standard for ball grid array packages. The supply voltage minimum (Vsup) for this component is 1.7V, and it operates in synchronous mode with a clock frequency of 100MHz. The programming voltage for this component is 1.8V, and it has a width of 6mm. Overall, this component is compact, versatile, and able to withstand a wide range of temperatures, making it a valuable addition to any electronic device.
S26KS256SDABHN030 Features
Package / Case: 24-VBGA
S26KS256SDABHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KS256SDABHN030 Memory applications.
workstations,
cell phones
networking
eSRAM
mainframes
main computer memory
data buffer
personal computers
nonvolatile BIOS memory
servers
The package or case for this electronic component is a 24-VBGA, which stands for Very Thin Ball Grid Array. This type of package is commonly used for integrated circuits and other small electronic devices. The operating temperature for this component is -40°C to 125°C, making it suitable for use in a wide range of environments. The terminal position is located at the bottom of the package, and the terminal pitch, or distance between each terminal, is 1mm. This component also follows the JESD-30 Code, specifically R-PBGA-B24, which is a standard for ball grid array packages. The supply voltage minimum (Vsup) for this component is 1.7V, and it operates in synchronous mode with a clock frequency of 100MHz. The programming voltage for this component is 1.8V, and it has a width of 6mm. Overall, this component is compact, versatile, and able to withstand a wide range of temperatures, making it a valuable addition to any electronic device.
S26KS256SDABHN030 Features
Package / Case: 24-VBGA
S26KS256SDABHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KS256SDABHN030 Memory applications.
workstations,
cell phones
networking
eSRAM
mainframes
main computer memory
data buffer
personal computers
nonvolatile BIOS memory
servers
S26KS256SDABHN030 More Descriptions
FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 100 MHz 96 ns 24-FBGA (6x8)
Active 2017 BOTTOM Non-Volatile FLASH Memory -40C~125C TA 1.7V 268435456bit 6mm
HyperBus Memory, 256 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
IC FLASH 256MBIT PARALLEL 24FBGA
IC EEPROM 256K PARALLEL 32PLCC
Active 2017 BOTTOM Non-Volatile FLASH Memory -40C~125C TA 1.7V 268435456bit 6mm
HyperBus Memory, 256 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
IC FLASH 256MBIT PARALLEL 24FBGA
IC EEPROM 256K PARALLEL 32PLCC
The three parts on the right have similar specifications to S26KS256SDABHN030.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusPbfree CodeScreening LevelECCN CodeView Compare
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S26KS256SDABHN03013 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2017HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V256Mb 32M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel32MX88268435456 bit1.8V1mm8mm6mmROHS3 Compliant---- -
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2016Automotive, AEC-Q100, HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS166MHz96nsFLASHParallel16MX88134217728 bit1.8V1mm8mm6mmROHS3 CompliantyesAEC-Q100; TS 16949-
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2016HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V-NOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS166MHz96nsFLASHParallel16MX88134217728 bit1.8V---ROHS3 Compliant-AEC-Q1003A991.B.1.A
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit3V1mm8mm6mmROHS3 CompliantyesAEC-Q100; TS 16949-
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