Cypress Semiconductor Corp S26KS128SDABHN030
- Part Number:
- S26KS128SDABHN030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235024-S26KS128SDABHN030
- Description:
- IC 128M FLASH MEMORY
- Datasheet:
- S26KS128SDABHN030
Cypress Semiconductor Corp S26KS128SDABHN030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS128SDABHN030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2017
- SeriesHyperFlash™ KS
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)2V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization16MX8
- Memory Width8
- Memory Density134217728 bit
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS128SDABHN030 Overview
This product is designed for surface mount installation and is packaged in a tray. It was first published in 2017 and utilizes FLASH - NOR technology. The voltage supply range is 1.7V to 1.95V and the terminal position is at the bottom. The maximum supply voltage is 2V and it operates at a clock frequency of 100MHz. With a memory density of 134217728 bits, it has a width of 6mm.
S26KS128SDABHN030 Features
Package / Case: 24-VBGA
S26KS128SDABHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDABHN030 Memory applications.
eDRAM
printers
cell phones
eSRAM
networks
supercomputers
personal computers
Cache memory
workstations,
networking
This product is designed for surface mount installation and is packaged in a tray. It was first published in 2017 and utilizes FLASH - NOR technology. The voltage supply range is 1.7V to 1.95V and the terminal position is at the bottom. The maximum supply voltage is 2V and it operates at a clock frequency of 100MHz. With a memory density of 134217728 bits, it has a width of 6mm.
S26KS128SDABHN030 Features
Package / Case: 24-VBGA
S26KS128SDABHN030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDABHN030 Memory applications.
eDRAM
printers
cell phones
eSRAM
networks
supercomputers
personal computers
Cache memory
workstations,
networking
S26KS128SDABHN030 More Descriptions
FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 100 MHz 96 ns 24-FBGA (6x8)
Active 2017 BOTTOM Non-Volatile FLASH Memory -40C~125C TA 1.7V 134217728bit 6mm
HyperBus Memory, 128 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
128Mbit (Parallel) BGA-24 NOR FLASH ROHS
IC FLASH 128MBIT PARALLEL 24FBGA
IC DRAM 128M PARALLEL 86TSOP II
Active 2017 BOTTOM Non-Volatile FLASH Memory -40C~125C TA 1.7V 134217728bit 6mm
HyperBus Memory, 128 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
128Mbit (Parallel) BGA-24 NOR FLASH ROHS
IC FLASH 128MBIT PARALLEL 24FBGA
IC DRAM 128M PARALLEL 86TSOP II
The three parts on the right have similar specifications to S26KS128SDABHN030.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusScreening LevelECCN CodeView Compare
-
S26KS128SDABHN03013 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2017HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel16MX88134217728 bit1.8V1mm8mm6mmROHS3 Compliant---
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016HyperFlash™ KLActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V-NOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit3V---ROHS3 CompliantAEC-Q100-
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray-Automotive, AEC-Q100, HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V256Mb 32M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel32MX88268435456 bit1.8V1mm8mm6mmROHS3 Compliant--
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2016HyperFlash™ KSActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V-NOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS166MHz96nsFLASHParallel16MX88134217728 bit1.8V---ROHS3 CompliantAEC-Q1003A991.B.1.A
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