Cypress Semiconductor Corp S26KS128SDABHB030
- Part Number:
- S26KS128SDABHB030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3233974-S26KS128SDABHB030
- Description:
- FLASH MEMORY NOR
- Datasheet:
- S26KS128SDABHB030
Cypress Semiconductor Corp S26KS128SDABHB030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS128SDABHB030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2017
- SeriesAutomotive, AEC-Q100, HyperFlash™ KS
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization16MX8
- Memory Width8
- Memory Density134217728 bit
- Screening LevelAEC-Q100; TS 16949
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS128SDABHB030 Overview
This particular component is manufactured by Cypress Semiconductor Corp and falls under the Memory category. It is a Memory chip that can be mounted on a surface. It has 24 termination points and utilizes FLASH - NOR technology. The required supply voltage for this chip is 1.8V. The maximum reflow temperature for this chip is not specified. It is classified under the JESD-30 code R-PBGA-B24. The operating mode for this chip is synchronous, meaning it operates in synchronization with an external clock signal. The clock frequency for this chip is 100MHz and it has an access time of 96ns. This component is compliant with the Restriction of Hazardous Substances Directive (RoHS) and meets the ROHS3 standards.
S26KS128SDABHB030 Features
Package / Case: 24-VBGA
S26KS128SDABHB030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDABHB030 Memory applications.
hard disk drive (HDD)
Camcorders
graphics card
printers
personal digital assistants
Cache memory
telecommunications
networks
networking
embedded logic
This particular component is manufactured by Cypress Semiconductor Corp and falls under the Memory category. It is a Memory chip that can be mounted on a surface. It has 24 termination points and utilizes FLASH - NOR technology. The required supply voltage for this chip is 1.8V. The maximum reflow temperature for this chip is not specified. It is classified under the JESD-30 code R-PBGA-B24. The operating mode for this chip is synchronous, meaning it operates in synchronization with an external clock signal. The clock frequency for this chip is 100MHz and it has an access time of 96ns. This component is compliant with the Restriction of Hazardous Substances Directive (RoHS) and meets the ROHS3 standards.
S26KS128SDABHB030 Features
Package / Case: 24-VBGA
S26KS128SDABHB030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDABHB030 Memory applications.
hard disk drive (HDD)
Camcorders
graphics card
printers
personal digital assistants
Cache memory
telecommunications
networks
networking
embedded logic
S26KS128SDABHB030 More Descriptions
FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 100 MHz 96 ns 24-FBGA (6x8)
Active 2017 AEC-Q100; TS 16949 BOTTOM FLASH Memory -40C~105C TA 1.7V 134217728bit 6mm
HyperBus Memory, 128 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
IC FLASH 128MBIT PARALLEL 24FBGA
IC DRAM 128M PARALLEL 86TSOP II
Active 2017 AEC-Q100; TS 16949 BOTTOM FLASH Memory -40C~105C TA 1.7V 134217728bit 6mm
HyperBus Memory, 128 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
IC FLASH 128MBIT PARALLEL 24FBGA
IC DRAM 128M PARALLEL 86TSOP II
The three parts on the right have similar specifications to S26KS128SDABHB030.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusTime@Peak Reflow Temperature-Max (s)View Compare
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S26KS128SDABHB03013 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KSyesActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel16MX88134217728 bitAEC-Q100; TS 169491.8V1mm8mm6mmROHS3 Compliant--
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2016Automotive, AEC-Q100, HyperFlash™ KSyesActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS166MHz96nsFLASHParallel16MX88134217728 bitAEC-Q100; TS 169491.8V1mm8mm6mmROHS3 Compliant-
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KL-Active3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mm-R-PBGA-B243.6V2.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel16MX88134217728 bit-3V1mm8mm6mmROHS3 CompliantNOT SPECIFIED
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KL-Active3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bit-3V1mm8mm6mmROHS3 Compliant-
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