Cypress Semiconductor Corp S26KS128SDABHA030
- Part Number:
- S26KS128SDABHA030
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3233863-S26KS128SDABHA030
- Description:
- FLASH MEMORY NOR
- Datasheet:
- S26KS128SDABHA030
Cypress Semiconductor Corp S26KS128SDABHA030 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S26KS128SDABHA030.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case24-VBGA
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2017
- SeriesAutomotive, AEC-Q100, HyperFlash™ KS
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency100MHz
- Access Time96ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization16MX8
- Memory Width8
- Memory Density134217728 bit
- Screening LevelAEC-Q100; TS 16949
- Programming Voltage1.8V
- Height Seated (Max)1mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
S26KS128SDABHA030 Overview
The 24-VBGA package/case and tray packaging make the Automotive AEC-Q100 HyperFlash™ KS an ideal solution for automotive applications. The terminal position is located at the bottom for ease of installation. The product has not specified a maximum reflow temperature, ensuring flexibility in manufacturing processes. With a memory size of 128Mb 16M x 8 and an organization of 16MX8, this product offers ample storage capacity. The memory width of 8 and density of 134217728 bit further enhance its performance. With a compact length of 8mm, this product is designed to meet the demands of the automotive industry.
S26KS128SDABHA030 Features
Package / Case: 24-VBGA
S26KS128SDABHA030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDABHA030 Memory applications.
main computer memory
workstations,
Camcorders
supercomputers
embedded logic
networks
Cache memory
data buffer
eSRAM
printers
The 24-VBGA package/case and tray packaging make the Automotive AEC-Q100 HyperFlash™ KS an ideal solution for automotive applications. The terminal position is located at the bottom for ease of installation. The product has not specified a maximum reflow temperature, ensuring flexibility in manufacturing processes. With a memory size of 128Mb 16M x 8 and an organization of 16MX8, this product offers ample storage capacity. The memory width of 8 and density of 134217728 bit further enhance its performance. With a compact length of 8mm, this product is designed to meet the demands of the automotive industry.
S26KS128SDABHA030 Features
Package / Case: 24-VBGA
S26KS128SDABHA030 Applications
There are a lot of Cypress Semiconductor Corp S26KS128SDABHA030 Memory applications.
main computer memory
workstations,
Camcorders
supercomputers
embedded logic
networks
Cache memory
data buffer
eSRAM
printers
S26KS128SDABHA030 More Descriptions
FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 100 MHz 96 ns 24-FBGA (6x8)
8542.32.00.51 Surface Mount Tray 16MX8 ic memory 100MHz 96ns 6mm 134217728bit
HyperBus Memory, 128 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
128Mbit (Parallel) BGA-24 NOR FLASH ROHS
IC FLASH 128MBIT PARALLEL 24FBGA
8542.32.00.51 Surface Mount Tray 16MX8 ic memory 100MHz 96ns 6mm 134217728bit
HyperBus Memory, 128 Mbit Density, 96 ns Initial Access Time, 200 MBps Interface Bandwidth, FBGA-24, RoHSCypress Semiconductor SCT
128Mbit (Parallel) BGA-24 NOR FLASH ROHS
IC FLASH 128MBIT PARALLEL 24FBGA
The three parts on the right have similar specifications to S26KS128SDABHA030.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityScreening LevelProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusView Compare
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S26KS128SDABHA03013 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray2017Automotive, AEC-Q100, HyperFlash™ KSyesActive3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B241.95V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel16MX88134217728 bitAEC-Q100; TS 169491.8V1mm8mm6mmROHS3 Compliant-
-
13 WeeksSurface Mount24-VBGAYES-40°C~105°C TATray-Automotive, AEC-Q100, HyperFlash™ KS-Active3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V256Mb 32M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel32MX88268435456 bit-1.8V1mm8mm6mmROHS3 Compliant
-
13 WeeksSurface Mount24-VBGAYES-40°C~85°C TATray2017HyperFlash™ KS-Active3 (168 Hours)248542.32.00.51FLASH - NOR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B242V1.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHz96nsFLASHParallel16MX88134217728 bit-1.8V1mm8mm6mmROHS3 Compliant
-
13 WeeksSurface Mount24-VBGAYES-40°C~125°C TATray2016Automotive, AEC-Q100, HyperFlash™ KLyesActive3 (168 Hours)248542.32.00.51FLASH - NOR2.7V~3.6VBOTTOMNOT SPECIFIED13V1mmNOT SPECIFIEDR-PBGA-B243.6V2.7V512Mb 64M x 8Non-VolatileSYNCHRONOUS100MHz96nsFLASHParallel64MX88536870912 bitAEC-Q100; TS 169493V1mm8mm6mmROHS3 Compliant
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