Cypress Semiconductor Corp S25FL512SAGMFIR11
- Part Number:
- S25FL512SAGMFIR11
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3228701-S25FL512SAGMFIR11
- Description:
- IC FLASH 512MBIT 133MHZ 16SOIC
- Datasheet:
- S25FL512SAGMFIR11
Cypress Semiconductor Corp S25FL512SAGMFIR11 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S25FL512SAGMFIR11.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.295, 7.50mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTube
- Published2015
- SeriesFL-S
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations16
- ECCN Code3A991.B.1.A
- Terminal FinishMatte Tin (Sn)
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G16
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- InterfaceSPI, Serial
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Clock Frequency133MHz
- Supply Current-Max0.061mA
- Memory FormatFLASH
- Memory InterfaceSPI - Quad I/O
- Organization64MX8
- Memory Width8
- Address Bus Width32b
- Density512 Mb
- Standby Current-Max0.0001A
- Programming Voltage3V
- Serial Bus TypeSPI
- Endurance100000 Write/Erase Cycles
- Data Retention Time-Min20
- Write ProtectionHARDWARE/SOFTWARE
- Alternate Memory Width1
- Page Size512B
- Height Seated (Max)2.65mm
- Length10.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
S25FL512SAGMFIR11 Overview
There is a memory type Non-Volatile for this type of device. In addition, memory ics is available in a Tube case as well. The case is embedded in 16-SOIC (0.295, 7.50mm Width). A memory chip with a capacity of 512Mb 64M x 8 is used on this device. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. As you can see from the diagram, the chip is planted with 16 terminations. It supports up to 1 functions for comprehensive operation. A voltage of 3V is required for the operation of this memory device. It is important to note that the memory has a clock frequency rotation within the range of 133MHz. A voltage of 3V is noted as the operating supply voltage for this memory. It is an important component of the FL-S series memory devices used in a variety of applications. The SPI type serial bus this memory integrates with is helpful to carry and transfer data to the CPU. This device can be operated from a maximum supply current of 0.061mA under ideal conditions. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S25FL512SAGMFIR11 Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
Operating Supply Voltage:3V
S25FL512SAGMFIR11 Applications
There are a lot of Cypress Semiconductor Corp S25FL512SAGMFIR11 Memory applications.
embedded logic
hard disk drive (HDD)
workstations,
cell phones
mainframes
data buffer
eSRAM
multimedia computers
eDRAM
networks
There is a memory type Non-Volatile for this type of device. In addition, memory ics is available in a Tube case as well. The case is embedded in 16-SOIC (0.295, 7.50mm Width). A memory chip with a capacity of 512Mb 64M x 8 is used on this device. This device utilizes a FLASH format memory which is of mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V. A Surface Mount mounting type is recommended for this product. As you can see from the diagram, the chip is planted with 16 terminations. It supports up to 1 functions for comprehensive operation. A voltage of 3V is required for the operation of this memory device. It is important to note that the memory has a clock frequency rotation within the range of 133MHz. A voltage of 3V is noted as the operating supply voltage for this memory. It is an important component of the FL-S series memory devices used in a variety of applications. The SPI type serial bus this memory integrates with is helpful to carry and transfer data to the CPU. This device can be operated from a maximum supply current of 0.061mA under ideal conditions. A programming voltage of 3V is required to change a nonvolatile memory array's state.
S25FL512SAGMFIR11 Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
Operating Supply Voltage:3V
S25FL512SAGMFIR11 Applications
There are a lot of Cypress Semiconductor Corp S25FL512SAGMFIR11 Memory applications.
embedded logic
hard disk drive (HDD)
workstations,
cell phones
mainframes
data buffer
eSRAM
multimedia computers
eDRAM
networks
S25FL512SAGMFIR11 More Descriptions
NOR Flash Serial 3V/3.3V 512M-bit 512M/256M/128M x 1/2-bit/4-bit 8ns 16-Pin SOIC W Tube
Tube Pkged / 512-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, So3016 In Tube Packing, Reset# Vio
FLASH MEMORY, 512MBIT, 133MHZ, SOIC-16; Flash Memory Type: Serial NOR; Memory Size: 512Mbit; Flash Memory Configuration: 64M x 8bit; IC Interface Type: SPI; Memory Case Style: SOIC; No. of Pins: 16Pins; Clock Frequency: 133MHz;
Tube Pkged / 512-Mbit Cmos 3.0 Volt 65Nm Flash Memory With 133-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 256Kb, So3016 In Tube Packing, Reset# Vio
FLASH MEMORY, 512MBIT, 133MHZ, SOIC-16; Flash Memory Type: Serial NOR; Memory Size: 512Mbit; Flash Memory Configuration: 64M x 8bit; IC Interface Type: SPI; Memory Case Style: SOIC; No. of Pins: 16Pins; Clock Frequency: 133MHz;
The three parts on the right have similar specifications to S25FL512SAGMFIR11.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)InterfaceMemory SizeMemory TypeClock FrequencySupply Current-MaxMemory FormatMemory InterfaceOrganizationMemory WidthAddress Bus WidthDensityStandby Current-MaxProgramming VoltageSerial Bus TypeEnduranceData Retention Time-MinWrite ProtectionAlternate Memory WidthPage SizeHeight Seated (Max)LengthRadiation HardeningRoHS StatusAdditional FeatureOperating ModeMemory DensityParallel/SerialWidthNumber of PinsSupplier Device PackageWrite Cycle Time - Word, PageView Compare
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S25FL512SAGMFIR1113 WeeksSurface Mount16-SOIC (0.295, 7.50mm Width)YES-40°C~85°C TATube2015FL-Se3Active3 (168 Hours)163A991.B.1.AMatte Tin (Sn)8542.32.00.51FLASH - NOR2.7V~3.6VDUAL26013V1.27mm30R-PDSO-G163V3.6V2.7VSPI, Serial512Mb 64M x 8Non-Volatile133MHz0.061mAFLASHSPI - Quad I/O64MX8832b512 Mb0.0001A3VSPI100000 Write/Erase Cycles20HARDWARE/SOFTWARE1512B2.65mm10.3mmNoROHS3 Compliant---------
-
13 WeeksSurface Mount8-SOIC (0.209, 5.30mm Width)YES-40°C~105°C TATape & Reel (TR)-FL-Le3Active3 (168 Hours)8-Matte Tin (Sn)8542.32.00.51FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIEDS-PDSO-G8-3.6V2.7V-64Mb 8M x 8Non-Volatile108MHz-FLASHSPI - Quad I/O, QPI16MX44---3V----2-2.16mm5.28mm-ROHS3 CompliantIT ALSO HAVE X1 MEMORY WIDTHSYNCHRONOUS67108864 bitSERIAL5.28mm---
-
-Surface Mount8-SOIC (0.209, 5.30mm Width)--40°C~85°C TATray-FL-P-Obsolete1 (Unlimited)----FLASH - NOR2.7V~3.6V-----------32Mb 4M x 8Non-Volatile104MHz-FLASHSPI - Quad I/O---------------ROHS3 Compliant-----88-SOIC5μs, 3ms
-
11 WeeksSurface Mount8-SOIC (0.209, 5.30mm Width)--40°C~105°C TATray-FL-P-Obsolete1 (Unlimited)----FLASH - NOR2.7V~3.6V-----------32Mb 4M x 8Non-Volatile104MHz-FLASHSPI - Quad I/O---------------ROHS3 Compliant-----88-SOIC5μs, 3ms
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