Cypress Semiconductor Corp S25FL128SAGMFMG00
- Part Number:
- S25FL128SAGMFMG00
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229042-S25FL128SAGMFMG00
- Description:
- IC 128M FLASH MEMORY
- Datasheet:
- S25FL128SAGMFMG00
Cypress Semiconductor Corp S25FL128SAGMFMG00 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S25FL128SAGMFMG00.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.295, 7.50mm Width)
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2013
- SeriesAutomotive, AEC-Q100, FL-S
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations16
- Terminal FinishMatte Tin (Sn)
- Additional FeatureALSO CONFIGURABLE AS 128M X 1
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G16
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size128Mb 16M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Memory FormatFLASH
- Memory InterfaceSPI - Quad I/O
- Organization32MX4
- Memory Width4
- Memory Density134217728 bit
- Parallel/SerialSERIAL
- Programming Voltage3V
- Write Cycle Time-Max (tWC)500ms
- Alternate Memory Width2
- Height Seated (Max)2.65mm
- Length10.3mm
- Width7.5mm
- RoHS StatusROHS3 Compliant
S25FL128SAGMFMG00 Overview
The package or case for this particular component is a 16-SOIC (0.295, 7.50mm Width), which is a type of surface mount integrated circuit package. This package is designed to be compact and efficient, making it ideal for use in various electronic devices. The HTS code for this component is 8542.32.00.51, which is used to classify and track imports and exports of electronic components. The technology used in this component is FLASH - NOR, which is a type of non-volatile memory that can retain data even when the power is turned off. The supply voltage-max (Vsup) for this component is 3.6V, ensuring stable and reliable performance. It operates in synchronous mode, meaning that data is transferred in a synchronized manner with a clock signal. The clock frequency for this component is 133MHz, allowing for fast and efficient data transfer. The memory width is 4, which refers to the number of bits that can be accessed at once. The memory density is 134217728 bits, meaning that this component can store a large amount of data. The write cycle time-max (tWC) is 500ms, indicating the maximum time it takes for data to be written to the memory. This component is also ROHS3 compliant, meaning that it meets the standards for Restriction of Hazardous Substances and is environmentally friendly.
S25FL128SAGMFMG00 Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
Additional Feature:ALSO CONFIGURABLE AS 128M X 1
S25FL128SAGMFMG00 Applications
There are a lot of Cypress Semiconductor Corp S25FL128SAGMFMG00 Memory applications.
nonvolatile BIOS memory
Cache memory
main computer memory
eDRAM
eSRAM
cell phones
telecommunications
Camcorders
embedded logic
graphics card
The package or case for this particular component is a 16-SOIC (0.295, 7.50mm Width), which is a type of surface mount integrated circuit package. This package is designed to be compact and efficient, making it ideal for use in various electronic devices. The HTS code for this component is 8542.32.00.51, which is used to classify and track imports and exports of electronic components. The technology used in this component is FLASH - NOR, which is a type of non-volatile memory that can retain data even when the power is turned off. The supply voltage-max (Vsup) for this component is 3.6V, ensuring stable and reliable performance. It operates in synchronous mode, meaning that data is transferred in a synchronized manner with a clock signal. The clock frequency for this component is 133MHz, allowing for fast and efficient data transfer. The memory width is 4, which refers to the number of bits that can be accessed at once. The memory density is 134217728 bits, meaning that this component can store a large amount of data. The write cycle time-max (tWC) is 500ms, indicating the maximum time it takes for data to be written to the memory. This component is also ROHS3 compliant, meaning that it meets the standards for Restriction of Hazardous Substances and is environmentally friendly.
S25FL128SAGMFMG00 Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
Additional Feature:ALSO CONFIGURABLE AS 128M X 1
S25FL128SAGMFMG00 Applications
There are a lot of Cypress Semiconductor Corp S25FL128SAGMFMG00 Memory applications.
nonvolatile BIOS memory
Cache memory
main computer memory
eDRAM
eSRAM
cell phones
telecommunications
Camcorders
embedded logic
graphics card
S25FL128SAGMFMG00 More Descriptions
NOR Flash 128Mbit 32M X 4Bit/64M X 2Bit/128M X 1Bit Serial-SPI 16-Pin SOIC Tray
IC FLASH 128MBIT SPI/QUAD 16SOIC
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TRAY PACKING), EHPLC, SO FOOTPRINT WITH RESET#
IC FLASH 128MBIT SPI/QUAD 16SOIC
TRAY PKGED / 128-MBIT CMOS 3.0 VOLT FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS (16-PIN SOIC IN TRAY PACKING), EHPLC, SO FOOTPRINT WITH RESET#
The three parts on the right have similar specifications to S25FL128SAGMFMG00.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthMemory DensityParallel/SerialProgramming VoltageWrite Cycle Time-Max (tWC)Alternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsECCN CodePower SuppliesInterfaceNominal Supply CurrentAccess TimeData Bus WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeSerial Bus TypeEnduranceData Retention Time-MinWrite ProtectionPage SizeRadiation HardeningSupplier Device PackageView Compare
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S25FL128SAGMFMG0013 WeeksSurface Mount16-SOIC (0.295, 7.50mm Width)YES-40°C~125°C TATray2013Automotive, AEC-Q100, FL-Se3yesActive3 (168 Hours)16Matte Tin (Sn)ALSO CONFIGURABLE AS 128M X 18542.32.00.51FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIEDR-PDSO-G163.6V2.7V128Mb 16M x 8Non-VolatileSYNCHRONOUS133MHzFLASHSPI - Quad I/O32MX44134217728 bitSERIAL3V500ms22.65mm10.3mm7.5mmROHS3 Compliant----------------------
-
11 WeeksSurface Mount8-WDFN Exposed Pad--40°C~85°C TATray2015FL-P--Obsolete3 (168 Hours)8---FLASH - NOR2.7V~3.6VDUAL-13V1.27mm--3.6V2.7V32Mb 4M x 8Non-Volatile-104MHzFLASHSPI - Quad I/O4KX1616--3V--0.55mm6mm-ROHS3 CompliantSurface Mount83A991.B.1.A3/3.3VSPI, Serial38mA8 ns8b5μs, 3ms1b32 Mb0.00001ASynchronous8bSPI100000 Write/Erase Cycles20HARDWARE/SOFTWARE256BNo-
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-Surface Mount8-UDFN Exposed Pad--40°C~105°C TATray-FL-P--Obsolete1 (Unlimited)----FLASH - NOR2.7V~3.6V---------32Mb 4M x 8Non-Volatile-104MHzFLASHSPI - Quad I/O----------ROHS3 Compliant--------5μs, 3ms-----------8-USON (5x6)
-
-Surface Mount8-SOIC (0.209, 5.30mm Width)--40°C~85°C TATray-FL-P--Obsolete1 (Unlimited)----FLASH - NOR2.7V~3.6V---------32Mb 4M x 8Non-Volatile-104MHzFLASHSPI - Quad I/O----------ROHS3 Compliant-8------5μs, 3ms-----------8-SOIC
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