Toshiba Semiconductor and Storage RN1910FE,LF(CT
- Part Number:
- RN1910FE,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2461433-RN1910FE,LF(CT
- Description:
- TRANS 2NPN PREBIAS 0.1W ES6
- ECAD Model:
-
- Datasheet:
- RN1910FE,LF(CT
Toshiba Semiconductor and Storage RN1910FE,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1910FE,LF(CT.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Supplier Device PackageES6
- Weight3.005049mg
- PackagingCut Tape (CT)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Power Dissipation100mW
- PolarityNPN
- Power - Max100mW
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Resistor - Base (R1)4.7kOhms
- Continuous Collector Current100mA
- RoHS StatusRoHS Compliant
RN1910FE,LF(CT Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1910FE,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1910FE,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1910FE,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1910FE,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1910FE,LF(CT More Descriptions
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Trans Digital BJT NPN 50V 100mA 100mW 6-Pin ES T/R
ES6 PLN(LF), BIAS REISTOR BUILT-IN TRANSISTOR (BRT)
Trans Digital BJT NPN 50V 100mA 100mW 6-Pin ES T/R
ES6 PLN(LF), BIAS REISTOR BUILT-IN TRANSISTOR (BRT)
The three parts on the right have similar specifications to RN1910FE,LF(CT.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseSupplier Device PackageWeightPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Power DissipationPolarityPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Max Breakdown VoltageFrequency - TransitionEmitter Base Voltage (VEBO)hFE MinResistor - Base (R1)Continuous Collector CurrentRoHS StatusSurface MountTransistor Element MaterialSubcategoryNumber of ElementsPolarity/Channel TypePower Dissipation-Max (Abs)Resistor - Emitter Base (R2)View Compare
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RN1910FE,LF(CT12 WeeksSurface MountSurface MountSOT-563, SOT-666ES63.005049mgCut Tape (CT)2014Active1 (Unlimited)100mWNPN100mW2 NPN - Pre-Biased (Dual)300mV100mA120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA50V50V100mA50V250MHz5V1204.7kOhms100mARoHS Compliant-------- -
--Surface MountSOT-563, SOT-666--Tape & Reel (TR)2014Obsolete1 (Unlimited)--100mW2 NPN - Pre-Biased (Dual)--80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA-50V100mA-250MHz--22k Ω-RoHS CompliantYESSILICONBIP General Purpose Small Signal2NPN0.1W47k Ω
-
12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363US66.010099mgTape & Reel (TR)2014Active1 (Unlimited)200mWNPN200mW2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V50V100mA50V250MHz5V802.2kOhms100mARoHS Compliant------47kOhms
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-363--Cut Tape (CT)2014Obsolete1 (Unlimited)200mW-200mW2 NPN - Pre-Biased (Dual)300mV100mA80 @ 10mA 5V500nA300mV @ 250μA, 5mA50V--50V250MHz--10k Ω-RoHS Compliant------47k Ω
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