Toshiba Semiconductor and Storage RN1903,LF(CT
- Part Number:
- RN1903,LF(CT
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2461461-RN1903,LF(CT
- Description:
- TRANS 2NPN PREBIAS 0.2W US6
- ECAD Model:
-
- Datasheet:
- RN1901-06
Toshiba Semiconductor and Storage RN1903,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1903,LF(CT.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Transistor Element MaterialSILICON
- PackagingCut Tape (CT)
- Published2014
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- Max Power Dissipation200mW
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- JESD-30 CodeR-PDSO-G6
- Operating Temperature (Max)150°C
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Resistor - Base (R1)22k Ω
- Resistor - Emitter Base (R2)22k Ω
- RoHS StatusRoHS Compliant
RN1903,LF(CT Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1903,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1903,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1903,LF(CT or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1903,LF(CT. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1903,LF(CT More Descriptions
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount U
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
The three parts on the right have similar specifications to RN1903,LF(CT.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureMax Power DissipationTerminal FormReach Compliance CodeJESD-30 CodeOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionResistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusSurface MountSubcategoryVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)PolarityElement ConfigurationEmitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentView Compare
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RN1903,LF(CT12 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363SILICONCut Tape (CT)2014yesActive1 (Unlimited)6BUILT IN BIAS RESISTANCE RATIO IS 1200mWGULL WINGunknownR-PDSO-G6150°C2SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR200mWSWITCHINGNPN2 NPN - Pre-Biased (Dual)300mV100mA70 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V250MHz50V250MHz22k Ω22k ΩRoHS Compliant----------- -
--Surface MountSOT-563, SOT-666SILICONTape & Reel (TR)2014-Obsolete1 (Unlimited)-------2-100mW-NPN2 NPN - Pre-Biased (Dual)--120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA---250MHz4.7k Ω-RoHS CompliantYESBIP General Purpose Small Signal50V100mA0.1W-----
-
-Surface MountSurface MountSOT-563, SOT-666SILICONCut Tape (CT)2014-Obsolete1 (Unlimited)--100mW-unknown--2----2 NPN - Pre-Biased (Dual)300mV100mA50 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V-50V250MHz10k Ω10k ΩRoHS Compliant-BIP General Purpose Small Signal---NPNDual10V50100mA
-
12 WeeksSurface MountSurface MountSOT-563, SOT-666SILICONCut Tape (CT)2014-Discontinued1 (Unlimited)--100mW-unknown--2----2 NPN - Pre-Biased (Dual)300mV100mA120 @ 1mA 5V100nA ICBO300mV @ 250μA, 5mA50V-50V250MHz10k Ω-RoHS Compliant-BIP General Purpose Small Signal---NPNDual5V120100mA
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