QRD1114

Fairchild/ON Semiconductor QRD1114

Part Number:
QRD1114
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
4444186-QRD1114
Description:
SENSR OPTO TRANS 1.27MM REFL PCB
ECAD Model:
Datasheet:
QRD1114

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Specifications
Fairchild/ON Semiconductor QRD1114 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor QRD1114.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 hours ago)
  • Factory Lead Time
    23 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    Radial - 4 Leads
  • Number of Pins
    4
  • Weight
    0g
  • Operating Temperature
    -40°C~85°C
  • Packaging
    Bulk
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Position, Linear, Photoelectric Sensors
  • Max Power Dissipation
    100mW
  • Output Voltage
    30V
  • Output Type
    Phototransistor
  • Operating Supply Voltage
    1.7V
  • Number of Channels
    1
  • Termination Type
    SOLDER
  • Power Dissipation
    100mW
  • Forward Current
    50mA
  • Response Time
    10μs, 50μs
  • Output Current-Max
    5mA
  • Rise Time
    10μs
  • Forward Voltage
    1.7V
  • Fall Time (Typ)
    50 μs
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    1mA
  • Sensing Distance
    0.050 (1.27mm)
  • Collector Emitter Breakdown Voltage
    30V
  • Reverse Breakdown Voltage
    5V
  • Wavelength
    940 nm
  • Sensing Method
    Reflective
  • Sensors/Transducers Type
    LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
  • Input Current
    20mA
  • Housing
    PLASTIC
  • Reverse Voltage (DC)
    5V
  • Height
    4.65mm
  • Length
    6.1mm
  • Width
    4.39mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description:

The QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor from ON Semiconductor is a reflective object sensor that uses a phototransistor to detect the presence of an object. It is designed to detect objects up to 1.5 mm away and has a wide operating voltage range of 2.7 V to 30 V. The QRD1114 is available in a small, surface-mount package and is ideal for applications such as proximity sensing, object detection, and edge detection.

Features:

• Wide operating voltage range of 2.7 V to 30 V

• Detects objects up to 1.5 mm away
• Small, surface-mount package
• High sensitivity
• Low power consumption
• High reliability

Applications:

• Proximity sensing
• Object detection
• Edge detection
• Automotive applications
• Industrial automation
• Robotics
• Security systems
QRD1114 More Descriptions
QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor
OPTO SWITCH, REFLECTIVE; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Forward Current If:50mA; Forward Current If Max:50mA; Forward Voltage VF Max:1.7V; Operating Temperature Range:-40°C to 85°C; Output Type:Phototransistor
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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