Fairchild/ON Semiconductor QRD1114
- Part Number:
- QRD1114
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 4444186-QRD1114
- Description:
- SENSR OPTO TRANS 1.27MM REFL PCB
- Datasheet:
- QRD1114
Fairchild/ON Semiconductor QRD1114 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor QRD1114.
- Lifecycle StatusACTIVE (Last Updated: 4 hours ago)
- Factory Lead Time23 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseRadial - 4 Leads
- Number of Pins4
- Weight0g
- Operating Temperature-40°C~85°C
- PackagingBulk
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryPosition, Linear, Photoelectric Sensors
- Max Power Dissipation100mW
- Output Voltage30V
- Output TypePhototransistor
- Operating Supply Voltage1.7V
- Number of Channels1
- Termination TypeSOLDER
- Power Dissipation100mW
- Forward Current50mA
- Response Time10μs, 50μs
- Output Current-Max5mA
- Rise Time10μs
- Forward Voltage1.7V
- Fall Time (Typ)50 μs
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current1mA
- Sensing Distance0.050 (1.27mm)
- Collector Emitter Breakdown Voltage30V
- Reverse Breakdown Voltage5V
- Wavelength940 nm
- Sensing MethodReflective
- Sensors/Transducers TypeLINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
- Input Current20mA
- HousingPLASTIC
- Reverse Voltage (DC)5V
- Height4.65mm
- Length6.1mm
- Width4.39mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description:
The QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor from ON Semiconductor is a reflective object sensor that uses a phototransistor to detect the presence of an object. It is designed to detect objects up to 1.5 mm away and has a wide operating voltage range of 2.7 V to 30 V. The QRD1114 is available in a small, surface-mount package and is ideal for applications such as proximity sensing, object detection, and edge detection.
Features:
• Wide operating voltage range of 2.7 V to 30 V
• Detects objects up to 1.5 mm away
• Small, surface-mount package
• High sensitivity
• Low power consumption
• High reliability
Applications:
• Proximity sensing
• Object detection
• Edge detection
• Automotive applications
• Industrial automation
• Robotics
• Security systems
The QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor from ON Semiconductor is a reflective object sensor that uses a phototransistor to detect the presence of an object. It is designed to detect objects up to 1.5 mm away and has a wide operating voltage range of 2.7 V to 30 V. The QRD1114 is available in a small, surface-mount package and is ideal for applications such as proximity sensing, object detection, and edge detection.
Features:
• Wide operating voltage range of 2.7 V to 30 V
• Detects objects up to 1.5 mm away
• Small, surface-mount package
• High sensitivity
• Low power consumption
• High reliability
Applications:
• Proximity sensing
• Object detection
• Edge detection
• Automotive applications
• Industrial automation
• Robotics
• Security systems
QRD1114 More Descriptions
QRD1114 Series 30 V 50 mA Phototransistor Reflective Object Sensor
OPTO SWITCH, REFLECTIVE; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Forward Current If:50mA; Forward Current If Max:50mA; Forward Voltage VF Max:1.7V; Operating Temperature Range:-40°C to 85°C; Output Type:Phototransistor
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
OPTO SWITCH, REFLECTIVE; No. of Channels:1; Optocoupler Output Type:Phototransistor; Input Current:20mA; Output Voltage:30V; Opto Case Style:Through Hole; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Forward Current If:50mA; Forward Current If Max:50mA; Forward Voltage VF Max:1.7V; Operating Temperature Range:-40°C to 85°C; Output Type:Phototransistor
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
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