PUMH10,115

Nexperia USA Inc. PUMH10,115

Part Number:
PUMH10,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2461422-PUMH10,115
Description:
TRANS 2NPN PREBIAS 0.3W 6TSSOP
ECAD Model:
Datasheet:
PUMH10,115

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Specifications
Nexperia USA Inc. PUMH10,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMH10,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    P*MH10
  • Pin Count
    6
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Polarity
    NPN
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power Dissipation
    200mW
  • Power - Max
    300mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 10mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 250μA, 5mA
  • Collector Emitter Saturation Voltage
    100mV
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    150°C
  • Resistor - Base (R1)
    2.2k Ω
  • Resistor - Emitter Base (R2)
    47k Ω
  • Ambient Temperature Range High
    150°C
  • Height
    1.1mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
Description
Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH10,115 are a series of transistors designed for use in a variety of applications. These transistors are pre-biased, meaning they are already set up for use in a circuit, and feature a 2NPN configuration. They are rated for 0.3W of power and come in a 6TSSOP package.

Features of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH10,115 include a low saturation voltage, low collector-emitter saturation voltage, and a high current gain. They also feature a low noise figure and a high switching speed.

Applications of the Nexperia Transistors - Bipolar (BJT) - Arrays, Pre-Biased PUMH10,115 include use in audio amplifiers, power supplies, and motor control circuits. They can also be used in switching applications, such as in power switches and relays.
PUMH10,115 More Descriptions
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
Trans Digital BJT NPN 50V 100mA 300mW Automotive 6-Pin TSSOP T/R
PUMH10 - NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
PUMH10 Series 50 V 100 mA SMT NPN/NPN Resistor-Equipped Transistor - SOT-363
2 NPN pre-biased (Dual) 300mW 100mA 50V SOT-363 Digital Transistors ROHS
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:200mW; DC Collector Current:100mA; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PUMH10,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Polarity
    Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Max Junction Temperature (Tj)
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Ambient Temperature Range High
    Height
    REACH SVHC
    RoHS Status
    Additional Feature
    Operating Temperature (Max)
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Reference Standard
    Transition Frequency
    Mount
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Element Configuration
    Collector Emitter Breakdown Voltage
    Radiation Hardening
    Lead Free
    View Compare
  • PUMH10,115
    PUMH10,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    Tape & Reel (TR)
    2011
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    8541.21.00.95
    GULL WING
    260
    40
    P*MH10
    6
    Not Qualified
    2
    NPN
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    200mW
    300mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    100 @ 10mA 5V
    1μA
    100mV @ 250μA, 5mA
    100mV
    50V
    5V
    100
    150°C
    2.2k Ω
    47k Ω
    150°C
    1.1mm
    No SVHC
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMH14,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    GULL WING
    260
    40
    -
    6
    Not Qualified
    2
    -
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    -
    300mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    -
    -
    100 @ 1mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    -
    -
    -
    47k Ω
    -
    -
    -
    -
    ROHS3 Compliant
    BUILT IN BIAS RESISTOR
    150°C
    NPN
    50V
    100mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMH11,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    Tape & Reel (TR)
    2001
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    GULL WING
    260
    30
    MH11
    6
    -
    2
    NPN
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    -
    300mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    -
    -
    30 @ 5mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    -
    -
    -
    10k Ω
    10k Ω
    -
    -
    -
    ROHS3 Compliant
    BUILT IN BIAS RESISTOR RATIO IS 1
    -
    -
    50V
    100mA
    AEC-Q101
    230MHz
    -
    -
    -
    -
    -
    -
    -
    -
  • PUMH30,115
    4 Weeks
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    -
    Tape & Reel (TR)
    2006
    e3
    Active
    1 (Unlimited)
    6
    -
    Tin (Sn)
    8541.21.00.75
    GULL WING
    260
    30
    -
    6
    -
    2
    NPN
    -
    -
    -
    -
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    30 @ 20mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    -
    -
    -
    2.2k Ω
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    150°C
    -65°C
    300mW
    Dual
    50V
    No
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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