Nexperia USA Inc. PUMD9,135
- Part Number:
- PUMD9,135
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2461399-PUMD9,135
- Description:
- TRANS PREBIAS NPN/PNP 6TSSOP
- Datasheet:
- PUMD9,135
Nexperia USA Inc. PUMD9,135 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PUMD9,135.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 4.7
- HTS Code8541.21.00.95
- Max Power Dissipation300mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberP*MD9
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Resistor - Base (R1)10k Ω
- Resistor - Emitter Base (R2)47k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PUMD9,135 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMD9,135 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMD9,135. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PUMD9,135 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PUMD9,135. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PUMD9,135 More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin TSSOP T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD9 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
PUMD9 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
The three parts on the right have similar specifications to PUMD9,135.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageResistor - Base (R1)Resistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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PUMD9,1354 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 4.78541.21.00.95300mWGULL WING26040P*MD962NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA100 @ 5mA 5V1μA100mV @ 250μA, 5mA50V10k Ω47k ΩNoROHS3 CompliantLead Free-------
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4 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR RATIO 2.1-300mWGULL WING26040MD1862NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA50 @ 10mA 5V1μA100mV @ 500μA, 10mA50V4.7k Ω10k ΩNoROHS3 CompliantLead Free------
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4 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2011e3Active1 (Unlimited)6EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTANCE RATIO IS 1-300mWGULL WING26030MD262NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA60 @ 5mA 5V1μA150mV @ 500μA, 10mA50V22k Ω22k ΩNoROHS3 CompliantLead Free------
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4 Weeks-Surface Mount6-TSSOP, SC-88, SOT-3636Tape & Reel (TR)2004e3Active1 (Unlimited)6EAR99Tin (Sn)---8541.21.00.95-GULL WING26030P*MD4862NPN, PNP-SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)--80 @ 5mA 5V / 100 @ 10mA 5V1μA150mV @ 500μA, 10mA / 100mV @ 250μA, 5mA-47k Ω, 2.2k Ω47k Ω-ROHS3 Compliant-YESSILICONSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR300mW50V100mA
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