PTFB093608SVV2R250XTMA1

Infineon Technologies PTFB093608SVV2R250XTMA1

Part Number:
PTFB093608SVV2R250XTMA1
Manufacturer:
Infineon Technologies
Ventron No:
3813636-PTFB093608SVV2R250XTMA1
Description:
IC AMP RF LDMOS
ECAD Model:
Datasheet:
PTFB093608SV ~

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies PTFB093608SVV2R250XTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies PTFB093608SVV2R250XTMA1.
  • Factory Lead Time
    26 Weeks
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Operating Supply Voltage
    28V
  • Halogen Free
    Halogen Free
  • Gain
    20 dB
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
PTFB093608SVV2R250XTMA1 Overview
This product is manufactured by Infineon Technologies and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet PTFB093608SVV2R250XTMA1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PTFB093608SVV2R250XTMA1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PTFB093608SVV2R250XTMA1 More Descriptions
LDMOS FET, High Power RF, 320W, 28V, 920-960MHz, H-37275G-6/2 Pkg, T/R 250
RF MOSFET Transistors RFP-LDMOS 9
Buffers & Line Drivers QUAD 3-STATE BUS BUF
High Power RF LDMOS FET, 360 W, 28 V, 920 960 MHz | Summary of Features: Broadband internal matching; Enhanced for use in DPD error correction systems and Doherty applications; Wide video bandwidth; Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40%; Integrated ESD protection; Low thermal resistance; Capable of handling 10:1 VSWR @ 32 V, 960 MHz, 3 dB Input Overdrive = 500 W (CW) output power; Pb-Free and RoHS compliant; Package: H-37275G-6/2, gull wing, surface mount
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.