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PSMN7R6-60XSQ

NXP USA Inc. PSMN7R6-60XSQ

Part Number:
PSMN7R6-60XSQ
Manufacturer:
NXP USA Inc.
Ventron No:
3586810-PSMN7R6-60XSQ
Description:
MOSFET N-CH 60V TO220AB
ECAD Model:
Datasheet:
PSMN7R6-60XSQ

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Specifications
NXP USA Inc. PSMN7R6-60XSQ technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PSMN7R6-60XSQ.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package
    TO-220F
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Last Time Buy
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    46W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4.6V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.651pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    51.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    38.7nC @ 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    Non-RoHS Compliant
Description
PSMN7R6-60XSQ Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2.651pF @ 30V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

PSMN7R6-60XSQ Features
a 60V drain to source voltage (Vdss)


PSMN7R6-60XSQ Applications
There are a lot of Rochester Electronics, LLC
PSMN7R6-60XSQ applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
PSMN7R6-60XSQ More Descriptions
PSMN7R6-60XS - N-channel 60 V 7.8 mΩ standard level MOSFET in TO220F (SOT186A)
Trans MOSFET N-CH 60V 51.5A 3-Pin TO-220F
IC MTR DRVR BIPOLAR 7-16V 24SOIC
Product Comparison
The three parts on the right have similar specifications to PSMN7R6-60XSQ.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Factory Lead Time
    Surface Mount
    Number of Pins
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Radiation Hardening
    Subcategory
    Reach Compliance Code
    Drain Current-Max (Abs) (ID)
    Source Url Status Check Date
    JESD-30 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • PSMN7R6-60XSQ
    PSMN7R6-60XSQ
    NXP USA Inc.
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    TO-220F
    -55°C~175°C TJ
    Tube
    Last Time Buy
    1 (Unlimited)
    MOSFET (Metal Oxide)
    46W Tc
    N-Channel
    7.8mOhm @ 25A, 10V
    4.6V @ 1mA
    2.651pF @ 30V
    51.5A Tc
    38.7nC @ 10V
    60V
    10V
    ±20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PSMN1R8-40YLC,115
    PSMN1R8-40YLC,115
    Nexperia USA Inc.
    Surface Mount
    SC-100, SOT-669
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    272W Tc
    N-Channel
    1.8m Ω @ 25A, 10V
    1.95V @ 1mA
    6680pF @ 20V
    100A Tc
    96nC @ 10V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    12 Weeks
    YES
    4
    SILICON
    2012
    e3
    4
    EAR99
    Tin (Sn)
    HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    SINGLE
    GULL WING
    4
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    272W
    DRAIN
    32.2 ns
    SWITCHING
    37ns
    31.7 ns
    62.5 ns
    100A
    MO-235
    20V
    40V
    No
    -
    -
    -
    -
    -
    -
    -
    PSMN7R6-60XSQ vs PSMN1R8-40YLC,115
  • PSMN013-100XS,127
    PSMN013-100XS,127
    NXP USA Inc.
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    -
    -55°C~175°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    48.4W Tc
    N-Channel
    13.9m Ω @ 10A, 10V
    4V @ 1mA
    3195pF @ 50V
    35.2A Tc
    57.5nC @ 10V
    100V
    10V
    ±20V
    ROHS3 Compliant
    -
    NO
    -
    -
    2012
    -
    -
    -
    -
    -
    -
    -
    3
    -
    Single
    ENHANCEMENT MODE
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FET General Purpose Power
    not_compliant
    35.2A
    2013-06-14 00:00:00
    -
    -
    -
    PSMN7R6-60XSQ vs PSMN013-100XS,127
  • PSMN2R9-30MLC,115
    PSMN2R9-30MLC,115
    Nexperia USA Inc.
    Surface Mount
    SOT-1210, 8-LFPAK33
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    91W Tc
    N-Channel
    2.9m Ω @ 25A, 10V
    2.15V @ 1mA
    2419pF @ 15V
    70A Tc
    36.1nC @ 10V
    -
    4.5V 10V
    ±20V
    ROHS3 Compliant
    26 Weeks
    YES
    8
    SILICON
    2012
    e3
    4
    -
    Tin (Sn)
    -
    SINGLE
    GULL WING
    8
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    91W
    DRAIN
    17.7 ns
    SWITCHING
    30.8ns
    19.3 ns
    24.6 ns
    70A
    -
    20V
    30V
    No
    -
    -
    -
    -
    R-PSSO-G4
    523A
    75 mJ
    PSMN7R6-60XSQ vs PSMN2R9-30MLC,115
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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