Fairchild/ON Semiconductor PN200_D27Z
- Part Number:
- PN200_D27Z
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585588-PN200_D27Z
- Description:
- TRANS PNP 45V 0.5A TO-92
- ECAD Model:
-
- Datasheet:
- PN200/A, MMBT200/A
Fairchild/ON Semiconductor PN200_D27Z technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor PN200_D27Z.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device PackageTO-92-3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Base Part NumberPN200
- Power - Max625mW
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 1V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 200mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)500mA
- Frequency - Transition250MHz
PN200_D27Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PN200_D27Z Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the supplier device package of TO-92-3
PN200_D27Z Applications
There are a lot of ON Semiconductor
PN200_D27Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PN200_D27Z Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 400mV @ 20mA, 200mA
the supplier device package of TO-92-3
PN200_D27Z Applications
There are a lot of ON Semiconductor
PN200_D27Z applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PN200_D27Z More Descriptions
Trans GP BJT PNP 45V 0.5A 3-Pin TO-92 T/R
The three parts on the right have similar specifications to PN200_D27Z.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Base Part NumberPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
-
PN200_D27ZThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)PN200625mWPNP100 @ 150mA 1V50nA400mV @ 20mA, 200mA45V500mA250MHz- -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)PN200625mWPNP100 @ 150mA 1V50nA400mV @ 20mA, 200mA45V500mA250MHz
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3-55°C~150°C TJTape & Box (TB)Obsolete1 (Unlimited)PN200625mWPNP100 @ 150mA 1V50nA400mV @ 20mA, 200mA45V500mA250MHz
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3-55°C~150°C TJBulkObsolete1 (Unlimited)PN200625mWPNP300 @ 10mA 1V50nA400mV @ 20mA, 200mA45V500mA250MHz
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