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PMBFJ175,215

NXP USA Inc. PMBFJ175,215

Part Number:
PMBFJ175,215
Manufacturer:
NXP USA Inc.
Ventron No:
2495761-PMBFJ175,215
Description:
JFET P-CH 30V 0.3W SOT23
ECAD Model:
Datasheet:
PMBFJ175,215

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Specifications
NXP USA Inc. PMBFJ175,215 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMBFJ175,215.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.21.00.95
  • Subcategory
    FET General Purpose Small Signal
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MBFJ175
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    DEPLETION MODE
  • Power - Max
    300mW
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Input Capacitance (Ciss) (Max) @ Vds
    8pF @ 10V VGS
  • Drain-source On Resistance-Max
    125Ohm
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    JUNCTION
  • Power Dissipation-Max (Abs)
    0.3W
  • Current - Drain (Idss) @ Vds (Vgs=0)
    7mA @ 15V
  • Voltage - Cutoff (VGS off) @ Id
    3V @ 10nA
  • Voltage - Breakdown (V(BR)GSS)
    30V
  • Resistance - RDS(On)
    125Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMBFJ175,215 Description
PMBFJ175,215 is a type of P-channel junction FET available in the plastic microminiature SOT23 package. It is positioned explicitly for application with analog switches, choppers, commutators, etc. using SMD technology. It is characterized by high input resistance, good thermal stability, strong radiation resistance, low noise, a simple manufacturing process, and easy integration. Therefore, PMBFJ175,215 JFET has been widely used in large-scale and ultra-large-scale integrated circuits.

PMBFJ175,215 Features
Available in the TO-236AB package Interchangeability of the drain and source connections Large input impedance Strong radiation resistance Good thermal stability

PMBFJ175,215 Applications
Application with analog switches, choppers, commutators, etc. Large-scale and ultra-large-scale integrated circuits
PMBFJ175,215 More Descriptions
Jfet Transistor, Junction Field Effect, Jfet, 30 V, 7 Ma, 70 Ma, 6 V, Sot-23 Rohs Compliant: Yes
Transistor JFET P-CH 30V 70mA 3-Pin TO-236AB T/R
XSTR,PJFET SMT,30V,.07A,125,SOT23,PMBFJ1
STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'
CoC and 2-years warranty / RFQ for pricing
RF SMALL SIGNAL TRANSISTOR MOSFET
JFET,P CH,30V,0.03A,SOT23; Breakdown Voltage Vbr: 30V; Zero Gate Voltage Drain Current Idss Min: 7mA; Zero Gate Voltage Drain Current Idss Max: 70mA; Gate-Source Cutoff Voltage Vgs(off) Max: 6V; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Continuous Drain Current Id: 70mA; No. of Pins: 3Pins; On Resistance Rds(on): 125ohm; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Pd: 300mW; Termination Type: Surface Mount Device; Transistor Polarity: P Channel; Voltage Vds Typ: 30V; Zero Gate Voltage Drain Current Idss: 7mA to 70mA
Product Comparison
The three parts on the right have similar specifications to PMBFJ175,215.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power - Max
    FET Type
    Transistor Application
    Input Capacitance (Ciss) (Max) @ Vds
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    FET Technology
    Power Dissipation-Max (Abs)
    Current - Drain (Idss) @ Vds (Vgs=0)
    Voltage - Cutoff (VGS off) @ Id
    Voltage - Breakdown (V(BR)GSS)
    Resistance - RDS(On)
    RoHS Status
    JEDEC-95 Code
    View Compare
  • PMBFJ175,215
    PMBFJ175,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ175
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    125Ohm
    30V
    JUNCTION
    0.3W
    7mA @ 15V
    3V @ 10nA
    30V
    125Ohm
    ROHS3 Compliant
    -
    -
  • PMBFJ113,215
    PMBFJ113,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ113
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    100Ohm
    40V
    JUNCTION
    0.3W
    2mA @ 15V
    3V @ 1μA
    40V
    100Ohm
    ROHS3 Compliant
    TO-236AB
    PMBFJ175,215 vs PMBFJ113,215
  • PMBFJ176,215
    PMBFJ176,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    1997
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    FET General Purpose Small Signal
    DUAL
    GULL WING
    260
    40
    MBFJ176
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    P-Channel
    SWITCHING
    8pF @ 10V VGS
    250Ohm
    30V
    JUNCTION
    0.3W
    2mA @ 15V
    1V @ 10nA
    30V
    250Ohm
    ROHS3 Compliant
    -
    PMBFJ175,215 vs PMBFJ176,215
  • PMBFJ112,215
    PMBFJ112,215
    NXP USA Inc.
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    8541.21.00.95
    Other Transistors
    DUAL
    GULL WING
    260
    40
    MBFJ112
    3
    R-PDSO-G3
    Not Qualified
    1
    SINGLE
    DEPLETION MODE
    300mW
    N-Channel
    SWITCHING
    6pF @ 10V VGS
    50Ohm
    40V
    JUNCTION
    0.3W
    5mA @ 15V
    5V @ 1μA
    40V
    50Ohm
    ROHS3 Compliant
    TO-236AB
    PMBFJ175,215 vs PMBFJ112,215
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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