Nexperia USA Inc. PDTA114TT,215
- Part Number:
- PDTA114TT,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2847278-PDTA114TT,215
- Description:
- TRANS PREBIAS PNP 250MW TO236AB
- Datasheet:
- PDTA114TT,215
Nexperia USA Inc. PDTA114TT,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTA114TT,215.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight4.535924g
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureBUILT IN BIAS RESISTOR
- HTS Code8541.21.00.95
- Max Power Dissipation250mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPDTA114
- Pin Count3
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Resistor - Base (R1)10 k Ω
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Nexperia Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA114TT,215 are PNP resistor-equipped transistors with a 10 kOhm resistor (R1) and an open resistor (R2). They have a maximum collector current of 0.2 A and a saturation voltage of 0.2 V.
Features of the Nexperia Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA114TT,215 include a low saturation voltage, a low collector-emitter voltage, and a low collector-emitter saturation voltage. They also have a high current gain and a high switching speed.
Applications of the Nexperia Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA114TT,215 include power management, audio amplifiers, and motor control. They can also be used in switching applications, such as in power supplies and DC-DC converters.
Features of the Nexperia Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA114TT,215 include a low saturation voltage, a low collector-emitter voltage, and a low collector-emitter saturation voltage. They also have a high current gain and a high switching speed.
Applications of the Nexperia Transistors - Bipolar (BJT) - Single, Pre-Biased PDTA114TT,215 include power management, audio amplifiers, and motor control. They can also be used in switching applications, such as in power supplies and DC-DC converters.
PDTA114TT,215 More Descriptions
PNP resistor-equipped transistor;R1=10k, 250mW; R2= open; NPNcomplement = PDTC114TT
Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R
PDTA114T series - PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
BRT TRANSISTOR, PNP, -50V, -100MA, 10KOHM / 10KOHM, 3-SOT-23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1 ;RoHS Compliant: Yes
Trans Digital BJT PNP 50V 100mA 250mW Automotive 3-Pin SOT-23 T/R
PDTA114T series - PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open
BRT TRANSISTOR, PNP, -50V, -100MA, 10KOHM / 10KOHM, 3-SOT-23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to PDTA114TT,215.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltageResistor - Base (R1)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeCase ConnectionTransition FrequencyFrequency - TransitionContact PlatingResistor - Emitter Base (R2)View Compare
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PDTA114TT,2154 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-334.535924gTape & Reel (TR)2004e3Active1 (Unlimited)3EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR8541.21.00.95250mWDUALGULL WING26030PDTA11431PNPSingleSWITCHINGPNP - Pre-Biased50V100mA200 @ 1mA 5V100nA ICBO150mV @ 500μA, 10mA50V50V10 k Ω6.35mm6.35mm6.35mmNo SVHCNoROHS3 CompliantLead Free------
-
8 WeeksSurface MountSurface MountSC-101, SOT-8833-Tape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR-250mWBOTTOM-26030PDTA11531PNPSingleSWITCHINGPNP - Pre-Biased50V100mA100 @ 1mA 5V1μA150mV @ 250μA, 5mA50V50V100 k Ω----NoROHS3 Compliant-COLLECTOR----
-
8 WeeksSurface MountSurface Mount3-XFDFN3-Tape & Reel (TR)-e3Active1 (Unlimited)3-Tin (Sn)150°C-65°CBUILT IN BIAS RESISTOR-250mWBOTTOM---PDTA14331PNPSingleSWITCHINGPNP - Pre-Biased50V100mA200 @ 1mA 5V1μA150mV @ 250μA, 5mA50V-4.7 k Ω----NoROHS3 Compliant-COLLECTOR180MHz180MHz--
-
4 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-33-Tape & Reel (TR)2009e3Active1 (Unlimited)3EAR99-150°C-65°CBUILT-IN BIAS RESISTOR RATIO IS 10-250mWDUALGULL WING26030PDTA11331PNPSingleSWITCHINGPNP - Pre-Biased50V100mA35 @ 5mA 5V-150mV @ 500μA, 10mA50V50V1 k Ω----NoROHS3 CompliantLead Free---Tin10 k Ω
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