PBSS5160DS,115

Nexperia USA Inc. PBSS5160DS,115

Part Number:
PBSS5160DS,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
3068411-PBSS5160DS,115
Description:
TRANS 2PNP 60V 0.77A 6TSOP
ECAD Model:
Datasheet:
PBSS5160DS,115

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Specifications
Nexperia USA Inc. PBSS5160DS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5160DS,115.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-74, SOT-457
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    PBSS5160DS
  • Pin Count
    6
  • Number of Elements
    2
  • Polarity
    PNP
  • Power Dissipation
    290mW
  • Power - Max
    420mW
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    185MHz
  • Transistor Type
    2 PNP (Dual)
  • Collector Emitter Voltage (VCEO)
    -60V
  • Max Collector Current
    -1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    150 @ 500mA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    330mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    770mA
  • Transition Frequency
    220MHz
  • Collector Emitter Saturation Voltage
    -250mV
  • Collector Base Voltage (VCBO)
    -80V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    100
  • Max Junction Temperature (Tj)
    150°C
  • Ambient Temperature Range High
    150°C
  • Height
    1.1mm
  • RoHS Status
    ROHS3 Compliant
Description
PBSS5160DS,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PBSS5160DS,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBSS5160DS,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBSS5160DS,115 More Descriptions
Trans GP BJT PNP 60V 1A 700mW Automotive 6-Pin TSOP T/R
PBSS5160DS - 60 V, 1 A PNP/PNP low VCEsat transistor
BISS TRANSISTOR, DUAL PNP, -60V, -1A, 6-SOT-457
; Collector Emitter Voltage, V(br)ceo:-60V; DC Current Gain Min (hfe):200; Collector Emitter Saturation Voltage, Vce(sat):-165mV; Continuous Collector Current Max.:-100mA; Current Gain-Bandwidth Typ:185MHz
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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