Nexperia USA Inc. PBSS5160DS,115
- Part Number:
- PBSS5160DS,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 3068411-PBSS5160DS,115
- Description:
- TRANS 2PNP 60V 0.77A 6TSOP
- Datasheet:
- PBSS5160DS,115
Nexperia USA Inc. PBSS5160DS,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS5160DS,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-74, SOT-457
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberPBSS5160DS
- Pin Count6
- Number of Elements2
- PolarityPNP
- Power Dissipation290mW
- Power - Max420mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product185MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)-60V
- Max Collector Current-1A
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 500mA 5V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic330mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)770mA
- Transition Frequency220MHz
- Collector Emitter Saturation Voltage-250mV
- Collector Base Voltage (VCBO)-80V
- Emitter Base Voltage (VEBO)-5V
- hFE Min100
- Max Junction Temperature (Tj)150°C
- Ambient Temperature Range High150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
PBSS5160DS,115 Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PBSS5160DS,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBSS5160DS,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet PBSS5160DS,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PBSS5160DS,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PBSS5160DS,115 More Descriptions
Trans GP BJT PNP 60V 1A 700mW Automotive 6-Pin TSOP T/R
PBSS5160DS - 60 V, 1 A PNP/PNP low VCEsat transistor
BISS TRANSISTOR, DUAL PNP, -60V, -1A, 6-SOT-457
; Collector Emitter Voltage, V(br)ceo:-60V; DC Current Gain Min (hfe):200; Collector Emitter Saturation Voltage, Vce(sat):-165mV; Continuous Collector Current Max.:-100mA; Current Gain-Bandwidth Typ:185MHz
PBSS5160DS - 60 V, 1 A PNP/PNP low VCEsat transistor
BISS TRANSISTOR, DUAL PNP, -60V, -1A, 6-SOT-457
; Collector Emitter Voltage, V(br)ceo:-60V; DC Current Gain Min (hfe):200; Collector Emitter Saturation Voltage, Vce(sat):-165mV; Continuous Collector Current Max.:-100mA; Current Gain-Bandwidth Typ:185MHz
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