ON Semiconductor NUS5531MTR2G

Name: NUS5531MTR2G
Brand: ON Semiconductor
SKU: 2497113-NUS5531MTR2G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NUS5531MTR2G

Manufacturer:: ON Semiconductor

Ventron No:: 2497113-NUS5531MTR2G

Description:: MOSFET/BJT SGL P-CH 12V 8-WDFN

ECAD Model:

Datasheet:: NUS5531MTR2G

Specifications

ON Semiconductor NUS5531MTR2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NUS5531MTR2G.

Lifecycle Status
OBSOLETE (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Number of Pins
8
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Applications
General Purpose
Voltage - Rated
20V PNP 12V P-Channel
Subcategory
Other Transistors
Current Rating (Amps)
2A PNP 5.47A P-Channel
Terminal Position
DUAL
Current Rating
5.47A
Pin Count
8
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.46W
Case Connection
DRAIN
Turn On Delay Time
8 ns
Transistor Application
SWITCHING
Rise Time
17.5ns
Fall Time (Typ)
17.5 ns
Transistor Type
PNP, P-Channel
Turn-Off Delay Time
80 ns
Continuous Drain Current (ID)
5.47A
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
4.4A
Drain to Source Breakdown Voltage
12V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Collector Current-Max (IC)
2A
DC Current Gain-Min (hFE)
150
Drain to Source Resistance
32mOhm
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NUS5531MTR2G Description
The NUS5531MTR2G is a ?12 V, ?6.2 A, Single P?Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package.

NUS5531MTR2G Features
High-Performance Power MOSFET
Single Low Vce(sat) Transistor as Charging Power Mux
3.0x3.0x0.8 mm WDFN Package
Independent Pin?out Provides Circuit Flexibility
Low Profile (<0.8 mm) for Easy Fit in Thin Environments
This is a Pb?Free Device

NUS5531MTR2G Application
Main Switch and Battery Charging Mux for Portable Electronics
Optimized for Commercial PMUs from Top Supplier

NUS5531MTR2G More Descriptions

Small Signal MOSFET 12V 5.7A 40mOhm Single P-Channel DFN8 with Single Charging BJT
General Purpose Tape & Reel (TR) Surface Mount PNP P-Channel Transistor 2A 1.46W 17.5ns 12V
Trans MOSFET P-CH 12V 5.47A 8-Pin WDFN T/R
Small Signal Field-Effect Transistor, 4.4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET/BJT SGL P-CH 12V 8-WDFN

Certification