ON Semiconductor NTZD3155CT1G

Name: NTZD3155CT1G
Brand: ON Semiconductor
SKU: 2473240-NTZD3155CT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTZD3155CT1G

Manufacturer:: ON Semiconductor

Ventron No:: 2473240-NTZD3155CT1G

Description:: MOSFET N/P-CH 20V SOT-563

ECAD Model:

Datasheet:: NTZD3155CT1G

Specifications

ON Semiconductor NTZD3155CT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTZD3155CT1G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Surface Mount
YES
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
500mOhm
Subcategory
Other Transistors
Max Power Dissipation
250mW
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
540mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
NTZD3155C
Pin Count
6
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
250mW
Turn On Delay Time
10 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
150pF @ 16V
Current - Continuous Drain (Id) @ 25°C
540mA 430mA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 4.5V
Rise Time
12ns
Drain to Source Voltage (Vdss)
20V
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
12 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
540mA
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
0.54A
Drain to Source Breakdown Voltage
-20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
600μm
Length
1.7mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTZD3155CT1G Description
A small signal is an AC signal superimposed on a bias signal (or on a DC constant signal) (more professionally, a signal with a zero average value). Decomposing the signal into two components allows the use of superposition techniques to simplify further analysis. NTZD3155CT1G Features ? Leading Trench Technology for Low RDS(on) Performance ? High Efficiency System Performance ? Low Threshold Voltage ? ESD Protected Gate ? Small Footprint 1.6 x 1.6 mm ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
NTZD3155CT1G Applications ? DC?DC Conversion Circuits ? Load/Power Switching with Level Shift ? Single or Dual Cell Li?Ion Battery Operated Systems ? High Speed Circuits ? Cell Phones, MP3s, Digital Cameras, and PDAs

NTZD3155CT1G More Descriptions

Complementary Small Signal MOSFET with ESD protection 20V
Trans MOSFET N/P-CH 20V 0.54A/0.43A 6-Pin SOT-563 T/R
Dual N & P-Channel 20 V 0.4/0.5 mOhm 250 mW Small Signal MOSFET - SOT-563
MOSFET N/P-Ch 20V 540mA/430mA ESD SOT563 | ON Semiconductor NTZD3155CT1G
Mosfet, N/P Channel, 20V, 0.54A, Sot-563-6; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:540Ma; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NTZD3155CT1G.
Small Signal Field-Effect Transistor, 0.54A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to NTZD3155CT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Polarity/Channel Type

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

FET Technology

FET Feature

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Mount

Terminal Finish

Qualification Status

Drain-source On Resistance-Max

Voltage - Rated DC

View Compare
NTZD3155CT1G

ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Tin

Surface Mount

SOT-563, SOT-666

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

500mOhm

Other Transistors

250mW

FLAT

260

540mA

40

NTZD3155C

6

2

Dual

ENHANCEMENT MODE

250mW

10 ns

N and P-Channel

SWITCHING

550m Ω @ 540mA, 4.5V

1V @ 250μA

150pF @ 16V

540mA 430mA

2.5nC @ 4.5V

12ns

20V

N-CHANNEL AND P-CHANNEL

12 ns

35 ns

540mA

1V

6V

0.54A

-20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

600μm

1.7mm

1.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
NTZD3156CT2G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 5 days ago)

-

-

Surface Mount

SOT-563, SOT-666

-

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Obsolete

1 (Unlimited)

6

-

-

Other Transistors

250mW

FLAT

NOT SPECIFIED

-

NOT SPECIFIED

-

6

2

Dual

ENHANCEMENT MODE

280mW

-

N and P-Channel

SWITCHING

550m Ω @ 540mA, 4.5V

1V @ 250μA

72pF @ 16V

540mA 430mA

2.5nC @ 4.5V

6.5ns

-

N-CHANNEL AND P-CHANNEL

6.5 ns

29 ns

540mA

-

6V

0.54A

20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

-

RoHS Compliant

Lead Free

Surface Mount

Tin (Sn)

Not Qualified

0.55Ohm

-

NTZD3155CT1G vs NTZD3156CT2G
NTZD5110NT1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

4 Weeks

Tin

Surface Mount

SOT-563, SOT-666

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

6

EAR99

1.6Ohm

FET General Purpose Power

900mW

FLAT

260

-

40

NTZD5110N

6

2

Dual

ENHANCEMENT MODE

250mW

12 ns

2 N-Channel (Dual)

SWITCHING

1.6 Ω @ 500mA, 10V

2.5V @ 250μA

24.5pF @ 20V

-

0.7nC @ 4.5V

7.3ns

60V

-

7.3 ns

63.7 ns

294mA

-

20V

-

60V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

600μm

1.7mm

1.3mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

NTZD3155CT1G vs NTZD5110NT1G
NTZD3155CT5G

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 day ago)

-

-

Surface Mount

SOT-563, SOT-666

YES

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

550MOhm

Other Transistors

250mW

FLAT

260

540mA

40

NTZD3155C

6

2

Dual

ENHANCEMENT MODE

250mW

-

N and P-Channel

SWITCHING

550m Ω @ 540mA, 4.5V

1V @ 250μA

150pF @ 16V

540mA 430mA

2.5nC @ 4.5V

12ns

-

N-CHANNEL AND P-CHANNEL

12 ns

35 ns

540mA

-

6V

0.54A

-20V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-

-

-

-

-

RoHS Compliant

Lead Free

-

Tin (Sn)

Not Qualified

-

20V

NTZD3155CT1G vs NTZD3155CT5G