ON Semiconductor NTZD3152PT1G
- Part Number:
- NTZD3152PT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2473202-NTZD3152PT1G
- Description:
- MOSFET 2P-CH 20V 0.43A SOT-563
- Datasheet:
- NTZD3152PT1G
ON Semiconductor NTZD3152PT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTZD3152PT1G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance500mOhm
- Terminal FinishTin (Sn)
- Additional FeatureESD PROTECTION, LOW THRESHOLD
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- Max Power Dissipation250mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-430mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNTZD3152P
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation250mW
- Turn On Delay Time10 ns
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs900m Ω @ 430mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds175pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs2.5nC @ 4.5V
- Rise Time12ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)430mA
- Gate to Source Voltage (Vgs)6V
- Drain Current-Max (Abs) (ID)0.43A
- Drain to Source Breakdown Voltage-20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureStandard
- Height600μm
- Length1.7mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTZD3152PT1G Description
The P-Channel Power MOSFET includes the P-Channel MOSFET-12V family, which is ideal for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters and low-voltage drive applications.
NTZD3152PT1G Features
? Low RDS(on) Improving System Efficiency ? Low Threshold Voltage ? ESD Protected Gate ? Small Footprint 1.6 x 1.6 mm ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
NTZD3152PT1G Applications
? Load/Power Switches ? Power Supply Converter Circuits ? Battery Management ? Cell Phones, Digital Cameras, PDAs, Pagers
NTZD3152PT1G Features
? Low RDS(on) Improving System Efficiency ? Low Threshold Voltage ? ESD Protected Gate ? Small Footprint 1.6 x 1.6 mm ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
NTZD3152PT1G Applications
? Load/Power Switches ? Power Supply Converter Circuits ? Battery Management ? Cell Phones, Digital Cameras, PDAs, Pagers
NTZD3152PT1G More Descriptions
Dual P-Channel Small Signal MOSFET with ESD Protection -20V, -430mA, 900mΩ
Transistor MOSFET Array Dual P-CH 20V 430mA 6-Pin SOT-563 T/R - Tape and Reel
Dual P-Channel 20 V 500 mOhm 250 mW Small Signal MOSFET - SOT-563
NTZD3152PT1G Dual P-channel MOSFET Transistor, 0.43 A, 20 V, 6-Pin SOT-563 | ON Semiconductor NTZD3152PT1G
MOSFET, DUAL P-CH, -20V, -430A, SOT-563; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-430mA; Source Voltage Vds:-20V; On
Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:430Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes |Onsemi NTZD3152PT1G.
MOSFET, DUAL P-CH, -20V, -430A, SOT-563; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -430mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor MOSFET Array Dual P-CH 20V 430mA 6-Pin SOT-563 T/R - Tape and Reel
Dual P-Channel 20 V 500 mOhm 250 mW Small Signal MOSFET - SOT-563
NTZD3152PT1G Dual P-channel MOSFET Transistor, 0.43 A, 20 V, 6-Pin SOT-563 | ON Semiconductor NTZD3152PT1G
MOSFET, DUAL P-CH, -20V, -430A, SOT-563; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-430mA; Source Voltage Vds:-20V; On
Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:20V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:430Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes |Onsemi NTZD3152PT1G.
MOSFET, DUAL P-CH, -20V, -430A, SOT-563; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -430mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 280mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to NTZD3152PT1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureHeightLengthWidthRadiation HardeningRoHS StatusLead FreeContact PlatingQualification StatusCurrent - Continuous Drain (Id) @ 25°CPolarity/Channel TypeMountOperating Temperature (Max)Power - MaxView Compare
-
NTZD3152PT1GACTIVE (Last Updated: 1 day ago)10 WeeksSurface MountSOT-563, SOT-666YES6SILICON-55°C~150°C TJTape & Reel (TR)2003e3yesActive1 (Unlimited)6EAR99500mOhmTin (Sn)ESD PROTECTION, LOW THRESHOLDOther Transistors-20V250mWFLAT260-430mA40NTZD3152P62DualENHANCEMENT MODE250mW10 ns2 P-Channel (Dual)SWITCHING900m Ω @ 430mA, 4.5V1V @ 250μA175pF @ 16V2.5nC @ 4.5V12ns20V12 ns35 ns430mA6V0.43A-20VMETAL-OXIDE SEMICONDUCTORStandard600μm1.7mm1.3mmNoROHS3 CompliantLead Free--------
-
ACTIVE (Last Updated: 4 days ago)4 WeeksSurface MountSOT-563, SOT-666YES6SILICON-55°C~150°C TJTape & Reel (TR)2007e3yesActive1 (Unlimited)6EAR991.6Ohm--FET General Purpose Power-900mWFLAT260-40NTZD5110N62DualENHANCEMENT MODE250mW12 ns2 N-Channel (Dual)SWITCHING1.6 Ω @ 500mA, 10V2.5V @ 250μA24.5pF @ 20V0.7nC @ 4.5V7.3ns60V7.3 ns63.7 ns294mA20V-60VMETAL-OXIDE SEMICONDUCTORLogic Level Gate600μm1.7mm1.3mmNoROHS3 CompliantLead FreeTin------
-
LAST SHIPMENTS (Last Updated: 1 day ago)-Surface MountSOT-563, SOT-666YES6SILICON-55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99550MOhmTin (Sn)-Other Transistors20V250mWFLAT260540mA40NTZD3155C62DualENHANCEMENT MODE250mW-N and P-ChannelSWITCHING550m Ω @ 540mA, 4.5V1V @ 250μA150pF @ 16V2.5nC @ 4.5V12ns-12 ns35 ns540mA6V0.54A-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate----RoHS CompliantLead Free-Not Qualified540mA 430mAN-CHANNEL AND P-CHANNEL---
-
-2 WeeksSurface MountSOT-563, SOT-666----Tape & Reel (TR)2016e3-Active1 (Unlimited)-EAR99-Tin (Sn)-Other Transistors-250mW--------ENHANCEMENT MODE--2 P-Channel (Dual)-900m Ω @ 430mA, 4.5V1V @ 250μA175pF @ 16V2.5nC @ 4.5V-20V--430mA-0.43A-METAL-OXIDE SEMICONDUCTORStandard----ROHS3 Compliant-----Surface Mount150°C250mW
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 April 2024
All You Need to Know About the 74HC165 Eight-Bit Shift Register
Ⅰ. Introduction to 74HC165Ⅱ. Functions of 74HC165Ⅲ. Logic diagram of 74HC165Ⅳ. Working principle of 74HC165Ⅴ. Recommended operating conditions of 74HC165Ⅵ. Precautions for using 74HC165Ⅶ. What is the role... -
17 April 2024
TPS5450DDAR: High Performance Step-Down Switching Regulator
Ⅰ. Overview of TPS5450DDARⅡ. Technical parameters of TPS5450DDARⅢ. Simplified schematic of TPS5450DDARⅣ. Features and advantages of TPS5450DDARⅤ. How to configure the soft start function of TPS5450DDAR?Ⅵ. Concrete applications... -
17 April 2024
SI2302 Field Effect Transistor Characteristics, Use and Application Prospects
Ⅰ. Introduction to SI2302Ⅱ. Main characteristics of SI2302Ⅲ. SI2302 driving methodⅣ. Maximum ratings of SI2302Ⅴ. Tips for using SI2302Ⅵ. What can be used to replace SI2302?Ⅶ. Precautions for... -
18 April 2024
TDA2030A Audio Amplifier Manufacturer, Application, Precautions and TDA2030 vs TDA2030A
Ⅰ. TDA2030A descriptionⅡ. Manufacturer of TDA2030AⅢ. Pin voltage parameters of TDA2030AⅣ. Market demand for TDA2030AⅤ. Application circuit of TDA2030AⅥ. Which one is better, TDA2030A or LM1875?Ⅶ. Precautions for...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.