ON Semiconductor NTTFS4821NTWG

Name: NTTFS4821NTWG
Brand: ON Semiconductor
SKU: 3554523-NTTFS4821NTWG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTTFS4821NTWG

Manufacturer:: ON Semiconductor

Ventron No:: 3554523-NTTFS4821NTWG

Description:: MOSFET N-CH 30V 7.5A 8WDFN

ECAD Model:

Datasheet:: NTTFS4821NTWG

Specifications

ON Semiconductor NTTFS4821NTWG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTTFS4821NTWG.

Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Surface Mount
YES
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Pin Count
8
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
660mW Ta 38.5W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
4.1W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1755pF @ 12V
Current - Continuous Drain (Id) @ 25°C
7.5A Ta 57A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 11.5V
Rise Time
22ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Fall Time (Typ)
4.5 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
18.6A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
13.5A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
171A
Avalanche Energy Rating (Eas)
55 mJ
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

NTTFS4821NTWG Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 55 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1755pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18.6A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.13.5A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 16 ns.Peak drain current for this device is 171A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 11.5V) reduces this device's overall power consumption.

NTTFS4821NTWG Features
the avalanche energy rating (Eas) is 55 mJ
a continuous drain current (ID) of 18.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 171A.

NTTFS4821NTWG Applications
There are a lot of ON Semiconductor
NTTFS4821NTWG applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTTFS4821NTWG More Descriptions

Single N-Channel Power MOSFET 30V 57A 7mΩ
Trans MOSFET N-CH 30V 18.6A 8-Pin WDFN T/R
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 7.5A/57A 8WDFN
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:13.5A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):5.8mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:2.1W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to NTTFS4821NTWG.

Image

Part Number

Manufacturer

Lifecycle Status

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Pin Count

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Terminal Form

Nominal Vgs

Height

Length

Width

REACH SVHC

Factory Lead Time

Mount

View Compare
NTTFS4821NTWG

ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

Surface Mount

8-PowerWDFN

YES

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2009

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

8

S-PDSO-N5

1

660mW Ta 38.5W Tc

Single

ENHANCEMENT MODE

4.1W

DRAIN

12 ns

N-Channel

SWITCHING

7m Ω @ 20A, 10V

2.5V @ 250μA

1755pF @ 12V

7.5A Ta 57A Tc

24nC @ 11.5V

22ns

4.5V 11.5V

±20V

4.5 ns

16 ns

18.6A

20V

13.5A

30V

171A

55 mJ

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
NTTFS4840NTAG

ON Semiconductor

-

Surface Mount

8-PowerWDFN

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

840mW Ta 27.8W Tc

-

-

-

-

-

N-Channel

-

24mOhm @ 20A, 10V

3V @ 250μA

580pF @ 15V

4.6A Ta 26A Tc

10.8nC @ 10V

-

4.5V 11.5V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

8-WDFN (3.3x3.3)

30V

-

-

-

-

-

-

-

-

NTTFS4821NTWG vs NTTFS4840NTAG
NTTFS5811NLTWG

ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

Surface Mount

8-PowerWDFN

YES

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

8

S-PDSO-F5

1

2.7W Ta 33W Tc

Single

ENHANCEMENT MODE

33W

DRAIN

11 ns

N-Channel

-

6.4m Ω @ 20A, 10V

2.2V @ 250μA

1570pF @ 25V

17A Ta 53A Tc

31nC @ 10V

30ns

4.5V 10V

±20V

12 ns

21 ns

53A

20V

-

40V

-

65 mJ

No

RoHS Compliant

Lead Free

-

-

FLAT

1.7 V

800μm

3.15mm

3.15mm

No SVHC

-

-

NTTFS4821NTWG vs NTTFS5811NLTWG
NTTFS4C65NTWG

ON Semiconductor

-

Surface Mount

8-PowerWDFN

-

8

-

-

Tape & Reel (TR)

-

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

18 Weeks

Surface Mount

NTTFS4821NTWG vs NTTFS4C65NTWG