ON Semiconductor NTQD6866R2G
- Part Number:
- NTQD6866R2G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2477760-NTQD6866R2G
- Description:
- MOSFET 2N-CH 20V 4.7A 8TSSOP
- Datasheet:
- NTQD6866R2G
ON Semiconductor NTQD6866R2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTQD6866R2G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC20V
- Max Power Dissipation940mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating6.9A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs32m Ω @ 6.9A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 16V
- Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
- Rise Time45ns
- Fall Time (Typ)90 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)4.7A
- Gate to Source Voltage (Vgs)12V
- Drain-source On Resistance-Max0.032Ohm
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Feedback Cap-Max (Crss)175 pF
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NTQD6866R2G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTQD6866R2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTQD6866R2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTQD6866R2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTQD6866R2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTQD6866R2G More Descriptions
Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8
Small Signal Field-Effect Transistor, 4.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 20V 5.8A N-Channel
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) COMMON DRAIN 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 22nC @ 4.5V 4.7A 940mW 90ns
Small Signal Field-Effect Transistor, 4.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 20V 5.8A N-Channel
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) COMMON DRAIN 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 22nC @ 4.5V 4.7A 940mW 90ns
The three parts on the right have similar specifications to NTQD6866R2G.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageFET TechnologyFET FeatureFeedback Cap-Max (Crss)RoHS StatusLead FreeReach Compliance CodeDrain Current-Max (Abs) (ID)JESD-30 CodePower - MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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NTQD6866R2GLAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete3 (168 Hours)8EAR99Tin (Sn)LOGIC LEVEL COMPATIBLE, AVALANCHE RATEDFET General Purpose Power20V940mWGULL WING2606.9A408Not Qualified2COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE2W2 N-Channel (Dual)SWITCHING32m Ω @ 6.9A, 4.5V1.2V @ 250μA1400pF @ 16V22nC @ 4.5V45ns90 ns40 ns4.7A12V0.032Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate175 pFRoHS CompliantLead Free-------
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LAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2006e3yesObsolete3 (168 Hours)8EAR99Tin (Sn)LOGIC LEVEL COMPATIBLEFET General Purpose Power20V1.39WGULL WING2607A408Not Qualified2COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE1.81W2 N-Channel (Dual)SWITCHING22m Ω @ 7A, 4.5V1.2V @ 250μA630pF @ 16V17nC @ 4.5V25ns25 ns60 ns6.2A12V0.03Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-RoHS CompliantLead Freeunknown7A----
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-Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)2004e0-Obsolete1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)-FET General Purpose Power20V940mWGULL WINGNOT SPECIFIED6.6ANOT SPECIFIED8Not Qualified2COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE-2 N-Channel (Dual)SWITCHING22m Ω @ 6.6A, 4.5V1.2V @ 250μA900pF @ 16V20nC @ 4.5V---6.6A-0.022Ohm-METAL-OXIDE SEMICONDUCTORLogic Level Gate-Non-RoHS CompliantContains Leadnot_compliant5.4AR-PDSO-G81.42W20A150 mJ
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-Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)2006e0-Obsolete1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLEFET General Purpose Power20V1.39WGULL WING2407A308Not Qualified2COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODEENHANCEMENT MODE1.81W2 N-Channel (Dual)SWITCHING22m Ω @ 7A, 4.5V1.2V @ 250μA630pF @ 16V17nC @ 4.5V25ns25 ns60 ns6.2A12V0.03Ohm20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-Non-RoHS CompliantContains Leadnot_compliant7A----
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