NTQD6866R2G

ON Semiconductor NTQD6866R2G

Part Number:
NTQD6866R2G
Manufacturer:
ON Semiconductor
Ventron No:
2477760-NTQD6866R2G
Description:
MOSFET 2N-CH 20V 4.7A 8TSSOP
ECAD Model:
Datasheet:
NTQD6866R2G

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Specifications
ON Semiconductor NTQD6866R2G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTQD6866R2G.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP (0.173, 4.40mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    940mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6.9A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    32m Ω @ 6.9A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 16V
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V
  • Rise Time
    45ns
  • Fall Time (Typ)
    90 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    4.7A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.032Ohm
  • Drain to Source Breakdown Voltage
    20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Feedback Cap-Max (Crss)
    175 pF
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
NTQD6866R2G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NTQD6866R2G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NTQD6866R2G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NTQD6866R2G More Descriptions
Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8
Small Signal Field-Effect Transistor, 4.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs- Power and Small Signal 20V 5.8A N-Channel
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) COMMON DRAIN 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 22nC @ 4.5V 4.7A 940mW 90ns
Product Comparison
The three parts on the right have similar specifications to NTQD6866R2G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Power Dissipation
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Feedback Cap-Max (Crss)
    RoHS Status
    Lead Free
    Reach Compliance Code
    Drain Current-Max (Abs) (ID)
    JESD-30 Code
    Power - Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • NTQD6866R2G
    NTQD6866R2G
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-TSSOP (0.173, 4.40mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    3 (168 Hours)
    8
    EAR99
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
    FET General Purpose Power
    20V
    940mW
    GULL WING
    260
    6.9A
    40
    8
    Not Qualified
    2
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    2W
    2 N-Channel (Dual)
    SWITCHING
    32m Ω @ 6.9A, 4.5V
    1.2V @ 250μA
    1400pF @ 16V
    22nC @ 4.5V
    45ns
    90 ns
    40 ns
    4.7A
    12V
    0.032Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    175 pF
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • NTQD6968NR2G
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-TSSOP (0.173, 4.40mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    3 (168 Hours)
    8
    EAR99
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    20V
    1.39W
    GULL WING
    260
    7A
    40
    8
    Not Qualified
    2
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    1.81W
    2 N-Channel (Dual)
    SWITCHING
    22m Ω @ 7A, 4.5V
    1.2V @ 250μA
    630pF @ 16V
    17nC @ 4.5V
    25ns
    25 ns
    60 ns
    6.2A
    12V
    0.03Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    RoHS Compliant
    Lead Free
    unknown
    7A
    -
    -
    -
    -
  • NTQD6968R2
    -
    Surface Mount
    Surface Mount
    8-TSSOP (0.173, 4.40mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2004
    e0
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Tin/Lead (Sn/Pb)
    -
    FET General Purpose Power
    20V
    940mW
    GULL WING
    NOT SPECIFIED
    6.6A
    NOT SPECIFIED
    8
    Not Qualified
    2
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    -
    2 N-Channel (Dual)
    SWITCHING
    22m Ω @ 6.6A, 4.5V
    1.2V @ 250μA
    900pF @ 16V
    20nC @ 4.5V
    -
    -
    -
    6.6A
    -
    0.022Ohm
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    Non-RoHS Compliant
    Contains Lead
    not_compliant
    5.4A
    R-PDSO-G8
    1.42W
    20A
    150 mJ
  • NTQD6968NR2
    -
    Surface Mount
    Surface Mount
    8-TSSOP (0.173, 4.40mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e0
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Tin/Lead (Sn/Pb)
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    20V
    1.39W
    GULL WING
    240
    7A
    30
    8
    Not Qualified
    2
    COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    1.81W
    2 N-Channel (Dual)
    SWITCHING
    22m Ω @ 7A, 4.5V
    1.2V @ 250μA
    630pF @ 16V
    17nC @ 4.5V
    25ns
    25 ns
    60 ns
    6.2A
    12V
    0.03Ohm
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    Non-RoHS Compliant
    Contains Lead
    not_compliant
    7A
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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