ON Semiconductor NTD4863NAT4G
- Part Number:
- NTD4863NAT4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 4538999-NTD4863NAT4G
- Description:
- MOSFET N-CH 25V 9.2A DPAK
- ECAD Model:
-
- Datasheet:
- NTD4863NAT4G
ON Semiconductor NTD4863NAT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4863NAT4G.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageDPAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.27W Ta 36.6W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds990pF @ 12V
- Current - Continuous Drain (Id) @ 25°C9.2A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs13.5nC @ 4.5V
- Drain to Source Voltage (Vdss)25V
- RoHS StatusROHS3 Compliant
NTD4863NAT4G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 12V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).
NTD4863NAT4G Features
a 25V drain to source voltage (Vdss)
NTD4863NAT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4863NAT4G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 12V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).
NTD4863NAT4G Features
a 25V drain to source voltage (Vdss)
NTD4863NAT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4863NAT4G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NTD4863NAT4G More Descriptions
Power MOSFET 25V 49A 9.3 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 25V 11.3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.2A Ta 49A Tc 11.3A 1.95W 16.5ns
Power Field-Effect Transistor, 9.2A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 25V, 49A, TO-252;
Trans MOSFET N-CH 25V 11.3A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.2A Ta 49A Tc 11.3A 1.95W 16.5ns
Power Field-Effect Transistor, 9.2A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 25V, 49A, TO-252;
The three parts on the right have similar specifications to NTD4863NAT4G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)RoHS StatusDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Lifecycle StatusSurface MountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationOperating ModePower DissipationCase ConnectionTransistor ApplicationTurn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeView Compare
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NTD4863NAT4GSurface MountTO-252-3, DPak (2 Leads Tab), SC-63DPAK-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)MOSFET (Metal Oxide)1.27W Ta 36.6W TcN-Channel9.3mOhm @ 30A, 10V2.5V @ 250μA990pF @ 12V9.2A Ta 49A Tc13.5nC @ 4.5V25VROHS3 Compliant-------------------------------------- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 50W TcN-Channel10mOhm @ 30A, 10V2.5V @ 250μA1.35pF @ 12V9A Ta 54A Tc11nC @ 4.5V30VROHS3 Compliant4.5V 11.5V±20V-----------------------------------
-
Through HoleTO-251-3 Stub Leads, IPakI-PAK-55°C~175°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.4W Ta 52W TcN-Channel9mOhm @ 30A, 10V2.5V @ 250μA1.456pF @ 12V9.6A Ta 58A Tc13nC @ 4.5V30VROHS3 Compliant4.5V 11.5V±20V-----------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTubeObsolete1 (Unlimited)MOSFET (Metal Oxide)1.04W Ta 75W TcN-Channel10m Ω @ 20A, 10V3V @ 250μA2400pF @ 24V8.4A Ta 68A Tc80nC @ 10V-Non-RoHS Compliant4.5V 10V±20VOBSOLETE (Last Updated: 1 week ago)YES4SILICON2005e0yes2EAR99Tin/Lead (Sn80Pb20)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VGULL WING235not_compliant68ANOT SPECIFIED4R-PSSO-G2Not Qualified1SingleENHANCEMENT MODE75WDRAINSWITCHING40 ns68A20V0.01Ohm30V28A722 mJLead Free
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