ON Semiconductor NTD4813NT4G

Name: NTD4813NT4G
Brand: ON Semiconductor
SKU: 2851981-NTD4813NT4G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTD4813NT4G

Manufacturer:: ON Semiconductor

Ventron No:: 2851981-NTD4813NT4G

Description:: MOSFET N-CH 30V 7.6A DPAK

ECAD Model:

Datasheet:: NTD4813NT4G

Specifications

ON Semiconductor NTD4813NT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD4813NT4G.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.27W Ta 35.3W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 12V
Current - Continuous Drain (Id) @ 25°C
7.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs
7.9nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
7.6A
Drain-source On Resistance-Max
0.024Ohm
Pulsed Drain Current-Max (IDM)
90A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
72 mJ
RoHS Status
ROHS3 Compliant

Description

NTD4813NT4G Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.The maximum input capacitance of this device is 860pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 7.6A.There is no pulsed drain current maximum for this device based on its rated peak drain current 90A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 30V.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 11.5V), this device helps reduce its power consumption.

NTD4813NT4G Features
the avalanche energy rating (Eas) is 72 mJ
based on its rated peak drain current 90A.
a 30V drain to source voltage (Vdss)

NTD4813NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4813NT4G applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

NTD4813NT4G More Descriptions

Power MOSFET 30V 40A 13 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal NFET 30V 40A 13MOHM
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.6A Ta 40A Tc 9A 1.94W 19.3ns
Trans MOSFET N-CH 30V 9A 3-Pin(2 Tab) DPAK T/R - Tape and Reel
Power Field-Effect Transistor, 7.6A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Product Comparison

The three parts on the right have similar specifications to NTD4813NT4G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Lifecycle Status

Number of Pins

Published

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Reach Compliance Code

Current Rating

Element Configuration

Power Dissipation

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Factory Lead Time

Rise Time

Fall Time (Typ)

Radiation Hardening

View Compare
NTD4813NT4G

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1.27W Ta 35.3W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

13m Ω @ 30A, 10V

2.5V @ 250μA

860pF @ 12V

7.6A Ta 40A Tc

7.9nC @ 4.5V

30V

4.5V 11.5V

±20V

7.6A

0.024Ohm

90A

30V

72 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTD4810N-1G

ON Semiconductor

Through Hole

TO-251-3 Short Leads, IPak, TO-251AA

-

-

-55°C~175°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

1.4W Ta 50W Tc

-

-

N-Channel

-

10mOhm @ 30A, 10V

2.5V @ 250μA

1.35pF @ 12V

9A Ta 54A Tc

11nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

-

-

ROHS3 Compliant

I-PAK

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NTD4813NT4G vs NTD4810N-1G
NTD4302

ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~150°C TJ

Tube

e0

yes

Obsolete

1 (Unlimited)

2

Tin/Lead (Sn80Pb20)

MOSFET (Metal Oxide)

-

GULL WING

235

NOT SPECIFIED

4

R-PSSO-G2

Not Qualified

1

-

1.04W Ta 75W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 20A, 10V

3V @ 250μA

2400pF @ 24V

8.4A Ta 68A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

0.01Ohm

28A

-

722 mJ

Non-RoHS Compliant

-

OBSOLETE (Last Updated: 1 week ago)

4

2005

EAR99

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

not_compliant

68A

Single

75W

40 ns

68A

20V

30V

Lead Free

-

-

-

-

NTD4813NT4G vs NTD4302
NTD4858N-35G

ON Semiconductor

Through Hole

TO-251-3 Stub Leads, IPak

NO

SILICON

-55°C~175°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

3

-

-

1

-

1.3W Ta 54.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.2m Ω @ 30A, 10V

2.5V @ 250μA

1563pF @ 12V

11.2A Ta 73A Tc

19.2nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 1 day ago)

3

2007

EAR99

-

FET General Purpose Power

-

-

-

Single

2W

23.8 ns

13.6A

20V

25V

Lead Free

4 Weeks

17.3ns

2.8 ns

No

NTD4813NT4G vs NTD4858N-35G