NST65011MW6T1G

ON Semiconductor NST65011MW6T1G

Part Number:
NST65011MW6T1G
Manufacturer:
ON Semiconductor
Ventron No:
3584816-NST65011MW6T1G
Description:
TRANS 2NPN 65V 0.1A SC88-6
ECAD Model:
Datasheet:
NST65011MW6T1G

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Specifications
ON Semiconductor NST65011MW6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NST65011MW6T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2015
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    380mW
  • Polarity
    NPN
  • Power - Max
    380mW
  • Transistor Type
    2 NPN (Dual)
  • Collector Emitter Voltage (VCEO)
    600mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    15nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    65V
  • Max Breakdown Voltage
    65V
  • Frequency - Transition
    100MHz
  • Collector Base Voltage (VCBO)
    80V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NST65011MW6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet NST65011MW6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NST65011MW6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NST65011MW6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon
Trans BJT Array Dual NPN 65V 0.1A 3-Pin SOT-363 T/R
TRANS, DUAL NPN, 65V, SOT-363-6; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 65V; Power Dissipation Pd: 380mW; DC Collector Current: 100mA; DC Current Gain hFE: 0.9hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans, Dual Npn, 65V, Sot-363-6; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:65V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:100Ma; Continuous Collector Current Pnp:-; No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi NST65011MW6T1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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