NSS1C201LT1G

ON Semiconductor NSS1C201LT1G

Part Number:
NSS1C201LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2462736-NSS1C201LT1G
Description:
TRANS NPN 100V 2A SOT-23
ECAD Model:
Datasheet:
NSS1C201LT1G

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Specifications
ON Semiconductor NSS1C201LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSS1C201LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    490mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Frequency
    110MHz
  • Base Part Number
    NSS1C201
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    710mW
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Gain Bandwidth Product
    110MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    150mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    100V
  • Current - Collector (Ic) (Max)
    2A
  • Transition Frequency
    110MHz
  • Collector Emitter Saturation Voltage
    150mV
  • Max Breakdown Voltage
    100V
  • Collector Base Voltage (VCBO)
    140V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    40
  • Height
    1.11mm
  • Length
    3.04mm
  • Width
    2.64mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSS1C201LT1G Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 150mV @ 200mA, 2A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.110MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

NSS1C201LT1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 110MHz


NSS1C201LT1G Applications
There are a lot of ON Semiconductor
NSS1C201LT1G applications of single BJT transistors.


Inverter
Interface
Driver
Muting
NSS1C201LT1G More Descriptions
ON Semi NSS1C201LT1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin SOT-23
Trans GP BJT NPN 100V 3A 710mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
100 V, 2.0 A NPN Low VCE(sat) Bipolar Transistor
NSS1C201L Series 100 V 2 A Surface Mount NPN Transistor - SOT-23
Transistor, BIPOL, NPN, 100V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:110MHz; Power Dissipation
TRANSISTOR, BIPOL, NPN, 100V; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 110MHz; Power Dissipation Pd: 490mW; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to NSS1C201LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Case Connection
    Power - Max
    Turn Off Time-Max (toff)
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • NSS1C201LT1G
    NSS1C201LT1G
    ACTIVE (Last Updated: 2 days ago)
    8 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    490mW
    DUAL
    GULL WING
    110MHz
    NSS1C201
    3
    1
    Single
    710mW
    SWITCHING
    Halogen Free
    110MHz
    NPN
    NPN
    100V
    3A
    120 @ 500mA 2V
    100nA ICBO
    150mV @ 200mA, 2A
    100V
    2A
    110MHz
    150mV
    100V
    140V
    7V
    40
    1.11mm
    3.04mm
    2.64mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NSS12501UW3T2G
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    -
    Surface Mount
    3-WDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    1.5W
    DUAL
    -
    150MHz
    NSS12501
    3
    1
    Single
    1.5W
    SWITCHING
    Halogen Free
    150MHz
    NPN
    NPN
    12V
    5A
    200 @ 2A 2V
    100nA ICBO
    120mV @ 400mA, 4A
    12V
    -
    150MHz
    120mV
    12V
    12V
    6V
    200
    750μm
    2mm
    2mm
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    COLLECTOR
    875mW
    420ns
    -
    -
    -
    -
  • NSS12100M3T5G
    ACTIVE (Last Updated: 3 days ago)
    4 Weeks
    Tin
    Surface Mount
    SOT-723
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    625mW
    DUAL
    FLAT
    -
    NSS12100
    3
    1
    Single
    625mW
    SWITCHING
    Halogen Free
    -
    PNP
    PNP
    12V
    1A
    120 @ 500mA 2V
    100nA ICBO
    410mV @ 100mA, 1A
    12V
    -
    -
    -35mV
    12V
    12V
    5V
    80
    550μm
    1.25mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • NSS12200WT1G
    ACTIVE (Last Updated: 6 days ago)
    2 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    Other Transistors
    450mW
    DUAL
    GULL WING
    100MHz
    NSS12200
    6
    1
    Single
    650mW
    SWITCHING
    Halogen Free
    100MHz
    PNP
    PNP
    12V
    2A
    100 @ 800mA 1.5 V
    100nA
    290mV @ 20mA, 1A
    12V
    -
    100MHz
    -170mV
    12V
    12V
    -5V
    100
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    450mW
    -
    -12V
    260
    -2A
    40
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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