ON Semiconductor NSBC123JPDXV6T1G
- Part Number:
- NSBC123JPDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461439-NSBC123JPDXV6T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT563
- ECAD Model:
-
- Datasheet:
- NSBC123JPDXV6T1G
ON Semiconductor NSBC123JPDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC123JPDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- Weight8.193012mg
- PackagingTape & Reel (TR)
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBC1*
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)2.2k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Height550μm
- Length1.6mm
- Width1.2mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC123JPDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123JPDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123JPDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC123JPDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC123JPDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC123JPDXV6T1G More Descriptions
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
NSBC123JPDXV6 Series 50 V 100 mA NPN/PNP Complementary Bias Resistor Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans, Npn/Pnp, 50V, 0.1A, Sot-563; Digital Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:47Kohm; Rohs Compliant: Yes |Onsemi NSBC123JPDXV6T1G
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-563 T/R - Tape and Reel
NSBC123JPDXV6 Series 50 V 100 mA NPN/PNP Complementary Bias Resistor Transistor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans, Npn/Pnp, 50V, 0.1A, Sot-563; Digital Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:2.2Kohm; Base-Emitter Resistor R2:47Kohm; Rohs Compliant: Yes |Onsemi NSBC123JPDXV6T1G
The three parts on the right have similar specifications to NSBC123JPDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsWeightPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialAdditional FeatureReach Compliance CodeJESD-30 CodeQualification StatusConfigurationPower - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)MountPower DissipationREACH SVHCView Compare
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NSBC123JPDXV6T1GACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountSOT-563, SOT-666YES68.193012mgTape & Reel (TR)2010e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V802.2k Ω100mA47k Ω550μm1.6mm1.2mmNoROHS3 CompliantLead Free-------------- -
--Surface MountSOT-563, SOT-666YES--Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6-MATTE TIN-----FLAT260-40-62--SWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 300μA, 10mA---10k Ω-47k Ω----ROHS3 Compliant-SILICONBUILT IN BIAS RESISTOR RATIO IS 4.7unknownR-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR500mWNPN AND PNP50V100mA---
-
--Surface MountSOT-563, SOT-666-6-Tape & Reel (TR)2008e3-Obsolete1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V802.2k Ω100mA47k Ω----Non-RoHS CompliantContains Lead--unknown-Not Qualified-----Surface Mount357mW-
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ACTIVE (Last Updated: 1 week ago)8 WeeksSurface MountSOT-963YES6-Tape & Reel (TR)2008e3yesActive1 (Unlimited)6EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal-339mWFLAT----62NPN, PNPDualSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA160 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-1602.2k Ω100mA----NoROHS3 CompliantLead Free-BUILT IN BIAS RESISTOR RATIO---------231mWNo SVHC
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