ON Semiconductor NSBC114EDXV6T1G
- Part Number:
- NSBC114EDXV6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461451-NSBC114EDXV6T1G
- Description:
- TRANS 2NPN PREBIAS 0.5W SOT563
- Datasheet:
- NSBC114EDXV6T1G
ON Semiconductor NSBC114EDXV6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSBC114EDXV6T1G.
- Lifecycle StatusACTIVE (Last Updated: 15 hours ago)
- Factory Lead Time17 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseSOT-563, SOT-666
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation500mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSBC1*
- Pin Count6
- Number of Elements2
- PolarityNPN
- Element ConfigurationDual
- Power Dissipation357mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min35
- Resistor - Base (R1)10k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NSBC114EDXV6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSBC114EDXV6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSBC114EDXV6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSBC114EDXV6T1G More Descriptions
Trans Digital BJT NPN 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
NSBC114ED - 50 V 100 mA Dual NPN SMT Bias Resistor Transistor - SOT-563
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
BRT TRANSISTOR, 50V, 10K; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
NSBC114ED - 50 V 100 mA Dual NPN SMT Bias Resistor Transistor - SOT-563
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
BRT TRANSISTOR, 50V, 10K; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-563; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
The three parts on the right have similar specifications to NSBC114EDXV6T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)REACH SVHCRadiation HardeningRoHS StatusLead FreeMountTransistor Element MaterialTerminal FinishReach Compliance CodeJESD-30 CodeQualification StatusConfigurationPolarity/Channel TypePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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NSBC114EDXV6T1GACTIVE (Last Updated: 15 hours ago)17 WeeksTinSurface MountSOT-563, SOT-666YES6Tape & Reel (TR)2006e3yesActive1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62NPNDual357mWSWITCHING2 NPN - Pre-Biased (Dual)50V100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V3510k Ω100mA10k ΩNo SVHCNoROHS3 CompliantLead Free------------
-
---Surface MountSOT-563, SOT-666--Tape & Reel (TR)2005e3-Obsolete1 (Unlimited)6EAR99--BUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62---SWITCHING2 NPN - Pre-Biased (Dual)250mV100mA3 @ 5mA 10V500nA250mV @ 5mA, 10mA50V--1k Ω-1k Ω--Non-RoHS CompliantContains LeadSurface MountSILICONTin (Sn)unknownR-PDSO-F6Not QualifiedSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN---
-
---Surface MountSOT-563, SOT-666-6Tape & Reel (TR)2008e3-Obsolete1 (Unlimited)6EAR99150°C-55°C-BIP General Purpose Small Signal50V500mWFLAT260100mA40NSBC1*62PNPDual357mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V802.2k Ω100mA47k Ω--Non-RoHS CompliantContains LeadSurface Mount-Tin (Sn)unknown-Not Qualified-----
-
---Surface MountSOT-563, SOT-666YES-Tape & Reel (TR)-e3yesObsolete1 (Unlimited)6---BUILT IN BIAS RESISTOR RATIO 2.14---FLAT260-40-62---SWITCHING2 NPN - Pre-Biased (Dual)--80 @ 5mA 10V500nA250mV @ 1mA, 10mA---22k Ω-47k Ω--ROHS3 Compliant--SILICONMATTE TINunknownR-PDSO-F6COMMERCIALSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORNPN500mW50V100mA
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