ON Semiconductor NSB1706DMW5T1G
- Part Number:
- NSB1706DMW5T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461462-NSB1706DMW5T1G
- Description:
- TRANS 2NPN PREBIAS 0.25W SC70
- ECAD Model:
-
- Datasheet:
- NSB1706DMW5T1G
ON Semiconductor NSB1706DMW5T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSB1706DMW5T1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case5-TSSOP, SC-70-5, SOT-353
- Surface MountYES
- Number of Pins5
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSB1706
- Pin Count5
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements2
- PolarityNPN
- ConfigurationCOMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power Dissipation187mW
- Transistor ApplicationSWITCHING
- Transistor Type2 NPN - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)6V
- hFE Min80
- Resistor - Base (R1)4.7k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- Height1mm
- Length2.2mm
- Width1.35mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description: The ON Semiconductor NSB1706DMW5T1G is a pre-biased Bipolar Junction Transistor (BJT) Array in a SOT353 package. It is designed for use in low voltage, low power applications.
Features:
• Pre-biased for low voltage, low power applications
• Low voltage operation: 50V
• High current gain: 47K/4.7KOhm
• SOT353 package
• Full reel
Applications: The ON Semiconductor NSB1706DMW5T1G is suitable for use in low voltage, low power applications such as audio amplifiers, power supplies, and motor control circuits. It can also be used in automotive, industrial, and consumer electronics.
Features:
• Pre-biased for low voltage, low power applications
• Low voltage operation: 50V
• High current gain: 47K/4.7KOhm
• SOT353 package
• Full reel
Applications: The ON Semiconductor NSB1706DMW5T1G is suitable for use in low voltage, low power applications such as audio amplifiers, power supplies, and motor control circuits. It can also be used in automotive, industrial, and consumer electronics.
NSB1706DMW5T1G More Descriptions
Trans Digital BJT NPN/PNP 50V 100mA Automotive 5-Pin SC-70 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
NSB Series 50 V 100 mA 4.7 kOhm NPN Dual Bias Resistor Transistor - SC-88A
NSB1706DMW5: Small Signal Bias Resistor Transistor SC-88A NPN 50V
ON Semi NSB1706DMW5T1G Dual NPN Bipolar Transistor, 0.1 A, 50 V, 5-Pin SC-88A | ON Semiconductor NSB1706DMW5T1G
80@5mA,10V 2 NPN - Pre-Biased 187mW 100mA 50V 500nA SC-88A Digital Transistors ROHS
ON SEMICONDUCTOR - NSB1706DMW5T1G - BRT TRANSISTOR, 50V, 47K/4.7KOHM, SOT353, FULL REEL
TRANSISTOR, AEC-Q101, DUAL NPN, SOT-353; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-353; No. of Pins: 5 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Dual NPN Bipolar Digital Transistor (BRT)
NSB Series 50 V 100 mA 4.7 kOhm NPN Dual Bias Resistor Transistor - SC-88A
NSB1706DMW5: Small Signal Bias Resistor Transistor SC-88A NPN 50V
ON Semi NSB1706DMW5T1G Dual NPN Bipolar Transistor, 0.1 A, 50 V, 5-Pin SC-88A | ON Semiconductor NSB1706DMW5T1G
80@5mA,10V 2 NPN - Pre-Biased 187mW 100mA 50V 500nA SC-88A Digital Transistors ROHS
ON SEMICONDUCTOR - NSB1706DMW5T1G - BRT TRANSISTOR, 50V, 47K/4.7KOHM, SOT353, FULL REEL
TRANSISTOR, AEC-Q101, DUAL NPN, SOT-353; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.1(Ratio); RF Transistor Case: SOT-353; No. of Pins: 5 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
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