Micron Technology Inc. NAND02GW3B2DN6E
- Part Number:
- NAND02GW3B2DN6E
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3247563-NAND02GW3B2DN6E
- Description:
- IC FLASH 2GBIT 48TSOP
- Datasheet:
- NAND02GxxBxD
Micron Technology Inc. NAND02GW3B2DN6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND02GW3B2DN6E.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case48-TFSOP (0.724, 18.40mm Width)
- Number of Pins48
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2010
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations48
- ECCN Code3A991.B.1.A
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Base Part NumberNAND02G
- Pin Count48
- Operating Supply Voltage3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size2Gb 256M x 8
- Nominal Supply Current30mA
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization256MX8
- Memory Width8
- Write Cycle Time - Word, Page25ns
- Address Bus Width8b
- Density2 Gb
- Standby Current-Max0.00005A
- Access Time (Max)25000 ns
- Sync/AsyncAsynchronous
- Word Size8b
- Programming Voltage3V
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size2K
- Sector Size128K
- Page Size2kB
- Ready/BusyYES
- Height Seated (Max)1.2mm
- Length18.4mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
NAND02GW3B2DN6E Overview
Our product features a tray packaging for convenient handling and storage. It is classified under ECCN Code 3A991.B.1.A and has an HTS Code of 8542.32.00.51. The voltage supply range is 2.7V~3.6V and it has a single function. The supply voltage is specifically designed to be 3V. This product utilizes non-volatile memory type and has an organization of 256MX8. The write cycle time for both word and page is 25ns, ensuring efficient operation. It is important to note that this product is not radiation hardened. These specifications make our product a reliable and high-performing choice for various applications.
NAND02GW3B2DN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins
Operating Supply Voltage:3V
NAND02GW3B2DN6E Applications
There are a lot of Micron Technology Inc.
NAND02GW3B2DN6E Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Our product features a tray packaging for convenient handling and storage. It is classified under ECCN Code 3A991.B.1.A and has an HTS Code of 8542.32.00.51. The voltage supply range is 2.7V~3.6V and it has a single function. The supply voltage is specifically designed to be 3V. This product utilizes non-volatile memory type and has an organization of 256MX8. The write cycle time for both word and page is 25ns, ensuring efficient operation. It is important to note that this product is not radiation hardened. These specifications make our product a reliable and high-performing choice for various applications.
NAND02GW3B2DN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins
Operating Supply Voltage:3V
NAND02GW3B2DN6E Applications
There are a lot of Micron Technology Inc.
NAND02GW3B2DN6E Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
NAND02GW3B2DN6E More Descriptions
IC,EEPROM,NAND FLASH,256MX8,CMOS,TSSOP,48PIN,PLASTIC
Flash, 256MX8, 25000ns, PDSO48
Flash, 256MX8, 25000ns, PDSO48
The three parts on the right have similar specifications to NAND02GW3B2DN6E.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxAccess Time (Max)Sync/AsyncWord SizeProgramming VoltageData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeight Seated (Max)LengthRadiation HardeningRoHS StatusJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power SuppliesWrite Cycle Time-Max (tWC)REACH SVHCPbfree CodeQualification StatusView Compare
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NAND02GW3B2DN6ESurface MountSurface Mount48-TFSOP (0.724, 18.40mm Width)48-40°C~85°C TATray2010Discontinued3 (168 Hours)483A991.B.1.A8542.32.00.51FLASH - NAND2.7V~3.6VDUAL13V0.5mmNAND02G483V3.6V2.7V2Gb 256M x 830mANon-VolatileFLASHParallel256MX8825ns8b2 Gb0.00005A25000 nsAsynchronous8b3VNONOYES2K128K2kBYES1.2mm18.4mmNoROHS3 Compliant----------
-
Surface MountSurface Mount48-TFSOP (0.724, 18.40mm Width)48-40°C~85°C TATray2008Obsolete3 (168 Hours)483A991.B.1.A8542.32.00.51FLASH - NAND2.7V~3.6VDUAL13V0.5mmNAND01G-A48-3.6V2.7V1Gb 128M x 830mANon-VolatileFLASHParallel128MX8825ns28b1 Gb0.00005A25000 nsAsynchronous8b3VNONOYES1K128K2kBYES1.2mm18.4mmNoROHS3 Compliante3Matte Tin (Sn)260303/3.3V25msNo SVHC--
-
Surface MountSurface Mount63-TFBGA63-40°C~85°C TATray2004Obsolete3 (168 Hours)633A991.B.1.A8542.32.00.51FLASH - NAND2.7V~3.6VBOTTOM13V0.8mmNAND01G-A63-3.6V2.7V1Gb 128M x 830mANon-VolatileFLASHParallel128MX8830ns28b1 Gb0.00005A20 nsAsynchronous8b3VNONOYES1K128K2KwordsYES1.05mm12mm-ROHS3 Compliante1TIN SILVER COPPER260303/3.3V--yesNot Qualified
-
Surface MountSurface Mount63-TFBGA63-40°C~85°C TATray2008Discontinued3 (168 Hours)633A991.B.1.A8542.32.00.51FLASH - NAND1.7V~1.95VBOTTOM11.8V0.8mmNAND02G631.8V1.95V1.7V2Gb 256M x 820mANon-VolatileFLASHParallel256MX8845ns8b2 Gb0.00005A25000 nsAsynchronous8b-NONOYES2K128K2kBYES1.05mm11mmNoROHS3 Compliante1TIN SILVER COPPER26030-----
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