Micron Technology Inc. NAND02GW3B2DN6E

Name: NAND02GW3B2DN6E
Brand: Micron Technology Inc.
SKU: 3247563-NAND02GW3B2DN6E
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NAND02GW3B2DN6E

Manufacturer:: Micron Technology Inc.

Ventron No:: 3247563-NAND02GW3B2DN6E

Description:: IC FLASH 2GBIT 48TSOP

ECAD Model:

Datasheet:: NAND02GxxBxD

Specifications

Micron Technology Inc. NAND02GW3B2DN6E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. NAND02GW3B2DN6E.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Number of Pins
48
Operating Temperature
-40°C~85°C TA
Packaging
Tray
Published
2010
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
48
ECCN Code
3A991.B.1.A
HTS Code
8542.32.00.51
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
3V
Terminal Pitch
0.5mm
Base Part Number
NAND02G
Pin Count
48
Operating Supply Voltage
3V
Supply Voltage-Max (Vsup)
3.6V
Supply Voltage-Min (Vsup)
2.7V
Memory Size
2Gb 256M x 8
Nominal Supply Current
30mA
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel
Organization
256MX8
Memory Width
8
Write Cycle Time - Word, Page
25ns
Address Bus Width
8b
Density
2 Gb
Standby Current-Max
0.00005A
Access Time (Max)
25000 ns
Sync/Async
Asynchronous
Word Size
8b
Programming Voltage
3V
Data Polling
NO
Toggle Bit
NO
Command User Interface
YES
Number of Sectors/Size
2K
Sector Size
128K
Page Size
2kB
Ready/Busy
YES
Height Seated (Max)
1.2mm
Length
18.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

NAND02GW3B2DN6E Overview
Our product features a tray packaging for convenient handling and storage. It is classified under ECCN Code 3A991.B.1.A and has an HTS Code of 8542.32.00.51. The voltage supply range is 2.7V~3.6V and it has a single function. The supply voltage is specifically designed to be 3V. This product utilizes non-volatile memory type and has an organization of 256MX8. The write cycle time for both word and page is 25ns, ensuring efficient operation. It is important to note that this product is not radiation hardened. These specifications make our product a reliable and high-performing choice for various applications.

NAND02GW3B2DN6E Features
Package / Case: 48-TFSOP (0.724, 18.40mm Width)
48 Pins
Operating Supply Voltage:3V

NAND02GW3B2DN6E Applications
There are a lot of Micron Technology Inc.
NAND02GW3B2DN6E Memory applications.

cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,

NAND02GW3B2DN6E More Descriptions

IC,EEPROM,NAND FLASH,256MX8,CMOS,TSSOP,48PIN,PLASTIC
Flash, 256MX8, 25000ns, PDSO48

Product Comparison

The three parts on the right have similar specifications to NAND02GW3B2DN6E.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Voltage - Supply

Terminal Position

Number of Functions

Supply Voltage

Terminal Pitch

Base Part Number

Pin Count

Operating Supply Voltage

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Nominal Supply Current

Memory Type

Memory Format

Memory Interface

Organization

Memory Width

Write Cycle Time - Word, Page

Address Bus Width

Density

Standby Current-Max

Access Time (Max)

Sync/Async

Word Size

Programming Voltage

Data Polling

Toggle Bit

Command User Interface

Number of Sectors/Size

Sector Size

Page Size

Ready/Busy

Height Seated (Max)

Length

Radiation Hardening

RoHS Status

JESD-609 Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power Supplies

Write Cycle Time-Max (tWC)

REACH SVHC

Pbfree Code

Qualification Status

View Compare
NAND02GW3B2DN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

2010

Discontinued

3 (168 Hours)

48

3A991.B.1.A

8542.32.00.51

FLASH - NAND

2.7V~3.6V

DUAL

1

3V

0.5mm

NAND02G

48

3V

3.6V

2.7V

2Gb 256M x 8

30mA

Non-Volatile

FLASH

Parallel

256MX8

8

25ns

8b

2 Gb

0.00005A

25000 ns

Asynchronous

8b

3V

NO

NO

YES

2K

128K

2kB

YES

1.2mm

18.4mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
NAND01GW3B2CN6E

Micron Technology Inc.

Surface Mount

Surface Mount

48-TFSOP (0.724, 18.40mm Width)

48

-40°C~85°C TA

Tray

2008

Obsolete

3 (168 Hours)

48

3A991.B.1.A

8542.32.00.51

FLASH - NAND

2.7V~3.6V

DUAL

1

3V

0.5mm

NAND01G-A

48

-

3.6V

2.7V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

25ns

28b

1 Gb

0.00005A

25000 ns

Asynchronous

8b

3V

NO

NO

YES

1K

128K

2kB

YES

1.2mm

18.4mm

No

ROHS3 Compliant

e3

Matte Tin (Sn)

260

30

3/3.3V

25ms

No SVHC

-

-

NAND02GW3B2DN6E vs NAND01GW3B2CN6E
NAND01GW3B2BZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2004

Obsolete

3 (168 Hours)

63

3A991.B.1.A

8542.32.00.51

FLASH - NAND

2.7V~3.6V

BOTTOM

1

3V

0.8mm

NAND01G-A

63

-

3.6V

2.7V

1Gb 128M x 8

30mA

Non-Volatile

FLASH

Parallel

128MX8

8

30ns

28b

1 Gb

0.00005A

20 ns

Asynchronous

8b

3V

NO

NO

YES

1K

128K

2Kwords

YES

1.05mm

12mm

-

ROHS3 Compliant

e1

TIN SILVER COPPER

260

30

3/3.3V

-

-

yes

Not Qualified

NAND02GW3B2DN6E vs NAND01GW3B2BZA6E
NAND02GR3B2DZA6E

Micron Technology Inc.

Surface Mount

Surface Mount

63-TFBGA

63

-40°C~85°C TA

Tray

2008

Discontinued

3 (168 Hours)

63

3A991.B.1.A

8542.32.00.51

FLASH - NAND

1.7V~1.95V

BOTTOM

1

1.8V

0.8mm

NAND02G

63

1.8V

1.95V

1.7V

2Gb 256M x 8

20mA

Non-Volatile

FLASH

Parallel

256MX8

8

45ns

8b

2 Gb

0.00005A

25000 ns

Asynchronous

8b

-

NO

NO

YES

2K

128K

2kB

YES

1.05mm

11mm

No

ROHS3 Compliant

e1

TIN SILVER COPPER

260

30

-

-

-

-

-

NAND02GW3B2DN6E vs NAND02GR3B2DZA6E