Micron Technology Inc. N25Q512A13G1241E
- Part Number:
- N25Q512A13G1241E
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3245528-N25Q512A13G1241E
- Description:
- IC FLASH 512MBIT 108MHZ 24TBGA
- Datasheet:
- N25Q512A13G1241E
Micron Technology Inc. N25Q512A13G1241E technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. N25Q512A13G1241E.
- Mounting TypeSurface Mount
- Package / Case24-TBGA
- Surface MountYES
- Number of Pins24
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2015
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations24
- Terminal FinishTIN SILVER COPPER
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberN25Q512
- Voltage2.7V
- InterfaceSPI, Serial
- Memory Size512Mb 128M x 4
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency108MHz
- Memory FormatFLASH
- Memory InterfaceSPI
- Organization512MX1
- Memory Width1
- Write Cycle Time - Word, Page8ms, 5ms
- Density512 Mb
- Height Seated (Max)1.2mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
N25Q512A13G1241E Overview
The N25Q512 is a high-performance FLASH - NOR technology memory device with a density of 512 Mb. It has 24 pins and a width of 6mm, making it compact and versatile for various applications. Its operating temperature range, specified by the JESD-609 Code e1, is -40°C to 85°C TA, ensuring reliable performance in extreme environments. With a peak reflow temperature of 260°C, this memory device can withstand high-temperature soldering processes. Its write cycle time for both word and page is 8ms and 5ms respectively, providing fast and efficient data storage. Overall, the N25Q512 is a reliable and efficient memory solution for a wide range of electronic devices.
N25Q512A13G1241E Features
Package / Case: 24-TBGA
24 Pins
N25Q512A13G1241E Applications
There are a lot of Micron Technology Inc.
N25Q512A13G1241E Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The N25Q512 is a high-performance FLASH - NOR technology memory device with a density of 512 Mb. It has 24 pins and a width of 6mm, making it compact and versatile for various applications. Its operating temperature range, specified by the JESD-609 Code e1, is -40°C to 85°C TA, ensuring reliable performance in extreme environments. With a peak reflow temperature of 260°C, this memory device can withstand high-temperature soldering processes. Its write cycle time for both word and page is 8ms and 5ms respectively, providing fast and efficient data storage. Overall, the N25Q512 is a reliable and efficient memory solution for a wide range of electronic devices.
N25Q512A13G1241E Features
Package / Case: 24-TBGA
24 Pins
N25Q512A13G1241E Applications
There are a lot of Micron Technology Inc.
N25Q512A13G1241E Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
N25Q512A13G1241E More Descriptions
NOR Flash, Legacy NOR Flash, 512Mb, 2.7V-3.6V, 24-ball T-PBGA, RoHS
SLC NAND Flash Parallel 1.8V 2Gbit 128M x 16bit 63-Pin VFBGA Tray
NOR FLASH 128MX4 PLASTIC PBF TBGA 3.0V IND TEMP
IC FLASH 512MBIT 108MHZ 24TBGA
MICRON SERIAL NOR FLASH MEMORY
SLC NAND Flash Parallel 1.8V 2Gbit 128M x 16bit 63-Pin VFBGA Tray
NOR FLASH 128MX4 PLASTIC PBF TBGA 3.0V IND TEMP
IC FLASH 512MBIT 108MHZ 24TBGA
MICRON SERIAL NOR FLASH MEMORY
The three parts on the right have similar specifications to N25Q512A13G1241E.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberVoltageInterfaceMemory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageDensityHeight Seated (Max)LengthWidthRoHS StatusJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory DensityParallel/SerialProgramming VoltageMountOperating Supply VoltageNominal Supply CurrentAccess TimeAddress Bus WidthSync/AsyncWord SizePage SizeRadiation HardeningReach Compliance CodeView Compare
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N25Q512A13G1241ESurface Mount24-TBGAYES24-40°C~85°C TATray2015e1yesObsolete3 (168 Hours)24TIN SILVER COPPERFLASH - NOR2.7V~3.6VBOTTOM26013V1mm30N25Q5122.7VSPI, Serial512Mb 128M x 4Non-VolatileSYNCHRONOUS108MHzFLASHSPI512MX118ms, 5ms512 Mb1.2mm8mm6mmROHS3 Compliant-----------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)YES--40°C~125°C TATape & Reel (TR)2015--Obsolete3 (168 Hours)8-FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIEDN25Q032A13--32Mb 8M x 4Non-VolatileSYNCHRONOUS108MHzFLASHSPI32MX118ms, 5ms-1.75mm4.9mm3.9mmROHS3 CompliantR-PDSO-G83.6V2.7V33554432 bitSERIAL3V----------
-
Surface Mount8-SOIC (0.209, 5.30mm Width)-8-40°C~85°C TATube2015--Obsolete3 (168 Hours)8-FLASH - NOR2.7V~3.6VDUAL26013V1.27mm30N25Q032A13-SPI, Serial32Mb 8M x 4Non-Volatile-108MHzFLASHSPI-88ms, 5ms32 Mb2.16mm--ROHS3 Compliant-3.6V2.7V--3VSurface Mount3V20mA7 ns22bSynchronous8b256BNo-
-
Surface Mount16-SOIC (0.295, 7.50mm Width)YES16-40°C~85°C TATray2010--Obsolete3 (168 Hours)16-FLASH - NOR1.7V~2VDUAL-11.8V1.27mm--1.7V-1Gb 256M x 4Non-VolatileSYNCHRONOUS108MHzFLASHSPI1GX118ms, 5ms1 Gb2.65mm10.3mm7.5mmROHS3 Compliant----SERIAL----------unknown
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