Macronix MX68GL1G0FHT2I-11G
- Part Number:
- MX68GL1G0FHT2I-11G
- Manufacturer:
- Macronix
- Ventron No:
- 3235120-MX68GL1G0FHT2I-11G
- Description:
- IC FLASH 1GBIT 110NS 56TSOP
- Datasheet:
- MX68GL1G0F
Macronix MX68GL1G0FHT2I-11G technical specifications, attributes, parameters and parts with similar specifications to Macronix MX68GL1G0FHT2I-11G.
- Package / CaseTFSOP
- Surface MountYES
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations56
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature85°C
- Min Operating Temperature-40°C
- SubcategoryFlash Memories
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeR-PDSO-G56
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3/3.3V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)2.7V
- InterfaceParallel
- Memory TypeFLASH, NOR
- Operating ModeASYNCHRONOUS
- Supply Current-Max0.1mA
- Organization64MX16
- Memory Width16
- Standby Current-Max0.00012A
- Memory Density1073741824 bit
- Access Time (Max)110 ns
- Programming Voltage3V
- Alternate Memory Width8
- Data PollingYES
- Toggle BitYES
- Number of Sectors/Size1K
- Sector Size128K
- Page Size8/16words
- Ready/BusyYES
- Length18.4mm
- Height Seated (Max)1.2mm
- Width14mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
MX68GL1G0FHT2I-11G Overview
As far as memory types are concerned, FLASH, NOR is considered to be its memory type. In the case of TFSOP, it is embedded within the case. On the chip, there are 56 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 3V. There is only a single power supply required for this memory chip. Temperatures below -40°C should not be used with this memory ics. It is recommended that operation of the part be restricted to temperatures not exceeding 85°C, otherwise damage to the part may occur as a result of overheating. As far as the supply current is concerned, it can be operated with a maximum of 0.1mA of currentThere is a need for a programming voltage of 3V in order to modify the state of some nonvolatile memory arrays. In most cases, this memory ics is regarded as being a type of Flash Memories. As a total, this ic memory chip is divided into 1K parts that are specifically sized.
MX68GL1G0FHT2I-11G Features
Package / Case: TFSOP
MX68GL1G0FHT2I-11G Applications
There are a lot of Macronix
MX68GL1G0FHT2I-11G Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
As far as memory types are concerned, FLASH, NOR is considered to be its memory type. In the case of TFSOP, it is embedded within the case. On the chip, there are 56 terminations that are planted. The part supports at least 1 functions to ensure a comprehensive working process. In order to function properly, this ic memory chip should be powered by a voltage of 3V. There is only a single power supply required for this memory chip. Temperatures below -40°C should not be used with this memory ics. It is recommended that operation of the part be restricted to temperatures not exceeding 85°C, otherwise damage to the part may occur as a result of overheating. As far as the supply current is concerned, it can be operated with a maximum of 0.1mA of currentThere is a need for a programming voltage of 3V in order to modify the state of some nonvolatile memory arrays. In most cases, this memory ics is regarded as being a type of Flash Memories. As a total, this ic memory chip is divided into 1K parts that are specifically sized.
MX68GL1G0FHT2I-11G Features
Package / Case: TFSOP
MX68GL1G0FHT2I-11G Applications
There are a lot of Macronix
MX68GL1G0FHT2I-11G Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
MX68GL1G0FHT2I-11G More Descriptions
NOR Flash Parallel 3.3V 1Gbit 128M/64M x 8bit/16bit 110ns 56-Pin TSOP-I
CoC and 2-years warranty / RFQ for pricing
IC FLASH 1GBIT PARALLEL 56TSOP
Parellel flash 1g tsop 110ns 3v
CoC and 2-years warranty / RFQ for pricing
IC FLASH 1GBIT PARALLEL 56TSOP
Parellel flash 1g tsop 110ns 3v
The three parts on the right have similar specifications to MX68GL1G0FHT2I-11G.
-
ImagePart NumberManufacturerPackage / CaseSurface MountJESD-609 CodeMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesTemperature GradeSupply Voltage-Min (Vsup)InterfaceMemory TypeOperating ModeSupply Current-MaxOrganizationMemory WidthStandby Current-MaxMemory DensityAccess Time (Max)Programming VoltageAlternate Memory WidthData PollingToggle BitNumber of Sectors/SizeSector SizePage SizeReady/BusyLengthHeight Seated (Max)WidthRoHS StatusLead FreeFactory Lead TimeMounting TypeOperating TemperaturePackagingSeriesPart StatusVoltage - SupplyReach Compliance CodeMemory SizeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageView Compare
-
MX68GL1G0FHT2I-11GTFSOPYESe33 (168 Hours)56Matte Tin (Sn)85°C-40°CFlash MemoriesCMOSDUALGULL WING26013V0.5mm40R-PDSO-G56Not Qualified3.6V3/3.3VINDUSTRIAL2.7VParallelFLASH, NORASYNCHRONOUS0.1mA64MX16160.00012A1073741824 bit110 ns3V8YESYES1K128K8/16wordsYES18.4mm1.2mm14mmRoHS CompliantLead Free-------------
-
56-TFSOP (0.724, 18.40mm Width)YES--56----FLASH - NORDUAL-NOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G56-3.6V--2.7V-Non-VolatileASYNCHRONOUS-64MX1616-1073741824 bit100 ns3V-------18.4mm1.2mm14mmRoHS Compliant-10 WeeksSurface Mount-40°C~85°C TATrayMX68GLActive2.7V~3.6Vcompliant1Gb 128M x 8FLASHParallel100ns
-
TFSOPYESe33 (168 Hours)56Matte Tin (Sn)85°C-40°CFlash MemoriesCMOSDUALGULL WING26013V0.5mm40R-PDSO-G56Not Qualified3.6V3/3.3VINDUSTRIAL2.7VParallelFLASH, NORASYNCHRONOUS0.1mA64MX16160.00012A1073741824 bit110 ns3V8YESYES1K128K8/16wordsYES18.4mm1.2mm14mmRoHS CompliantLead Free------------
-
-YES--64-85°C-40°CFlash MemoriesCMOSBOTTOMBALL26013V1mm40R-PBGA-B64Not Qualified3.6V3/3.3VINDUSTRIAL2.7VParallelFLASH, NORASYNCHRONOUS0.1mA64MX16160.00012A1073741824 bit120 ns3V8YESYES1K128K8/16wordsYES13mm1.4mm11mmRoHS Compliant-------------
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