ON Semiconductor MUN5313DW1T1G
- Part Number:
- MUN5313DW1T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2461447-MUN5313DW1T1G
- Description:
- TRANS PREBIAS NPN/PNP SOT363
- Datasheet:
- MUN5313DW1T1G
ON Semiconductor MUN5313DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5313DW1T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Surface MountYES
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation250mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN53**DW1
- Pin Count6
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation256mW
- Transistor ApplicationSWITCHING
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)47k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47k Ω
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN5313DW1T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5313DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5313DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5313DW1T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5313DW1T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5313DW1T1G More Descriptions
TRANS PREBIAS NPN/PNP SOT363 / Trans Digital BJT NPN/PNP 50V 100mA 385mW 6-Pin SC-88 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Complementary Bipolar Digital Transistor (BRT)
MUN5313DW1 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-363
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, 50V, 47/47KOHM, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Brt Transistor, 50V, 47K/47Kohm, Sc88; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:47Kohm Rohs Compliant: Yes |Onsemi MUN5313DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
80@5mA,10V 1 NPN,1 PNP - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Complementary Bipolar Digital Transistor (BRT)
MUN5313DW1 Series 50 V 100 mA Complementary Bias Resistor Transistor - SOT-363
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, 50V, 47/47KOHM, SOT-363; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous
Brt Transistor, 50V, 47K/47Kohm, Sc88; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:47Kohm Rohs Compliant: Yes |Onsemi MUN5313DW1T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
The three parts on the right have similar specifications to MUN5313DW1T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)REACH SVHCRadiation HardeningRoHS StatusLead FreeMountTerminal FinishReach Compliance CodeQualification StatusTransistor Element MaterialJESD-30 CodeConfigurationPower - MaxPolarity/Channel TypeView Compare
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MUN5313DW1T1GACTIVE (Last Updated: 4 days ago)8 WeeksTinSurface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2004e3yesActive1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW162NPN, PNPDual256mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V8047k Ω100mA47k ΩNo SVHCNoROHS3 CompliantLead Free----------
-
---Surface Mount6-TSSOP, SC-88, SOT-363-6Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 2.14BIP General Purpose Small Signal50V250mWGULL WING240100mA30MUN52**DW1T62NPNDual187mWSWITCHING2 NPN - Pre-Biased (Dual)50V100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V--22k Ω100mA47k Ω--Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantNot Qualified-----
-
ACTIVE (Last Updated: 1 day ago)2 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363YES6Tape & Reel (TR)2012e3yesObsolete1 (Unlimited)6EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO 1BIP General Purpose Small Signal50V250mWGULL WING260100mA40MUN53**DW162NPN, PNPDual187mWSWITCHING1 NPN, 1 PNP - Pre-Biased (Dual)50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-154.7k Ω100mA4.7k Ω-NoRoHS CompliantLead Free-Tin (Sn)-------
-
---Surface Mount6-TSSOP, SC-88, SOT-363--Tape & Reel (TR)2005e0-Obsolete1 (Unlimited)6EAR99--BUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V250mWGULL WING240-100mA30MUN51**DW1T62---SWITCHING2 PNP - Pre-Biased (Dual)250mV100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V--100k Ω-100k Ω--Non-RoHS CompliantContains LeadSurface MountTin/Lead (Sn/Pb)not_compliantNot QualifiedSILICONR-PDSO-G6SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR250mWPNP
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