MUN5235DW1T1G

ON Semiconductor MUN5235DW1T1G

Part Number:
MUN5235DW1T1G
Manufacturer:
ON Semiconductor
Ventron No:
2461396-MUN5235DW1T1G
Description:
TRANS 2NPN PREBIAS 0.25W SOT363
ECAD Model:
Datasheet:
MUN5235DW1T1G

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Specifications
ON Semiconductor MUN5235DW1T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5235DW1T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Surface Mount
    YES
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Subcategory
    BIP General Purpose Small Signal
  • Voltage - Rated DC
    50V
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    100mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MUN52**DW1T
  • Pin Count
    6
  • Max Output Current
    100mA
  • Operating Supply Voltage
    50V
  • Number of Elements
    2
  • Polarity
    NPN
  • Element Configuration
    Dual
  • Power Dissipation
    187mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    2 NPN - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    2.2k Ω
  • Continuous Collector Current
    100mA
  • Resistor - Emitter Base (R2)
    47k Ω
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The ON Semiconductor MUN5235DW1T1G is a pre-biased, two-NPN transistor array in a SOT-363 package. It is designed for use in low-power, low-voltage applications. The device features a low collector-emitter saturation voltage of 0.25W and a low collector-emitter voltage of 0.25V. It is suitable for use in a wide range of applications, including switching, amplification, and signal conditioning.

Features of the MUN5235DW1T1G include:
• Low collector-emitter saturation voltage of 0.25W
• Low collector-emitter voltage of 0.25V
• Low power consumption
• High gain
• High switching speed
• Low noise
• High reliability

Applications of the MUN5235DW1T1G include:
• Automotive
• Industrial
• Consumer electronics
• Telecommunications
• Medical
• Power management
• Lighting
• Security systems
MUN5235DW1T1G More Descriptions
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R / TRANS 2NPN PREBIAS 0.25W SOT363
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MUN Series 50V 100 mA 2.2 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363
Dual NPN Bipolar Digital Transistor (BRT)
Dual Dig. Transistor NPN 4.7k 47k SOT363 | ON Semiconductor MUN5235DW1T1G
80@5mA,10V 2 NPN - Pre-Biased 250mW 100mA 50V 500nA SOT-323-6 Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R - Tape and Reel
Transistor, 50V, 2.2/47KOHM, SOT363; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Brt Transistor, 50V 47K/2.2Kohm, Sot-363, Full Reel; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:2.2Kohm Rohs Compliant: Yes |Onsemi MUN5235DW1T1G
TRANS, 50V, 2.2/47KOHM, SOT363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: 0.047(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); No. of Pins: 6Pins
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Product Comparison
The three parts on the right have similar specifications to MUN5235DW1T1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Max Output Current
    Operating Supply Voltage
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Continuous Collector Current
    Resistor - Emitter Base (R2)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Additional Feature
    Reach Compliance Code
    Qualification Status
    Transistor Element Material
    JESD-30 Code
    Configuration
    Power - Max
    Polarity/Channel Type
    View Compare
  • MUN5235DW1T1G
    MUN5235DW1T1G
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2003
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    150°C
    -55°C
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    100mA
    40
    MUN52**DW1T
    6
    100mA
    50V
    2
    NPN
    Dual
    187mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    250mV
    50V
    80
    2.2k Ω
    100mA
    47k Ω
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MUN5234DW1T1
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    6
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    150°C
    -55°C
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    240
    100mA
    30
    MUN52**DW1T
    6
    -
    -
    2
    NPN
    Dual
    187mW
    SWITCHING
    2 NPN - Pre-Biased (Dual)
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    -
    -
    22k Ω
    100mA
    47k Ω
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    Tin/Lead (Sn/Pb)
    BUILT IN BIAS RESISTOR RATIO IS 2.14
    not_compliant
    Not Qualified
    -
    -
    -
    -
    -
  • MUN5332DW1T1G
    ACTIVE (Last Updated: 1 day ago)
    2 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    YES
    6
    Tape & Reel (TR)
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    150°C
    -55°C
    BIP General Purpose Small Signal
    50V
    250mW
    GULL WING
    260
    100mA
    40
    MUN53**DW1
    6
    -
    -
    2
    NPN, PNP
    Dual
    187mW
    SWITCHING
    1 NPN, 1 PNP - Pre-Biased (Dual)
    50V
    100mA
    15 @ 5mA 10V
    500nA
    250mV @ 1mA, 10mA
    50V
    -
    -
    15
    4.7k Ω
    100mA
    4.7k Ω
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    -
    Tin (Sn)
    BUILT-IN BIAS RESISTOR RATIO 1
    -
    -
    -
    -
    -
    -
    -
  • MUN5136DW1T1
    -
    -
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    Tape & Reel (TR)
    2005
    e0
    -
    Obsolete
    1 (Unlimited)
    6
    EAR99
    -
    -
    BIP General Purpose Small Signal
    -50V
    250mW
    GULL WING
    240
    -100mA
    30
    MUN51**DW1T
    6
    -
    -
    2
    -
    -
    -
    SWITCHING
    2 PNP - Pre-Biased (Dual)
    250mV
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    -
    -
    -
    100k Ω
    -
    100k Ω
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    Tin/Lead (Sn/Pb)
    BUILT-IN BIAS RESISTOR RATIO IS 1
    not_compliant
    Not Qualified
    SILICON
    R-PDSO-G6
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    250mW
    PNP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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