ON Semiconductor MUN2232T1G
- Part Number:
- MUN2232T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2469620-MUN2232T1G
- Description:
- TRANS PREBIAS NPN 338MW SC59
- Datasheet:
- MUN2232T1G
ON Semiconductor MUN2232T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN2232T1G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC50V
- Max Power Dissipation338mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN2232
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation338mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage50V
- hFE Min15
- Resistor - Base (R1)4.7 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)4.7 k Ω
- Height1.09mm
- Length2.9mm
- Width1.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN2232T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN2232T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN2232T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN2232T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN2232T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN2232T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel
MUN2232T1 Series 50 V 100 mA NPN Silicon Surface Mount Transistor - SC-59-3
NPN Bipolar Digital Transistor (BRT)
ON SEMICONDUCTOR - MUN2232T1G - BRT TRANSISTOR, 50V, 4.7K/4.7KOHM, SC-59, FULL REEL
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, AEC-Q101, PNP, -50V, -0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:-50V; Continuous
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R - Tape and Reel
MUN2232T1 Series 50 V 100 mA NPN Silicon Surface Mount Transistor - SC-59-3
NPN Bipolar Digital Transistor (BRT)
ON SEMICONDUCTOR - MUN2232T1G - BRT TRANSISTOR, 50V, 4.7K/4.7KOHM, SC-59, FULL REEL
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, AEC-Q101, PNP, -50V, -0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:-50V; Continuous
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
The three parts on the right have similar specifications to MUN2232T1G.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTerminal FinishMountHTS CodeReach Compliance CodeJESD-30 CodeQualification StatusView Compare
-
MUN2232T1GACTIVE (Last Updated: 3 days ago)8 WeeksTinSurface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2009e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal50V338mWDUALGULL WING260100mA40MUN223231NPNSingle338mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V250mV50V154.7 k Ω100mA4.7 k Ω1.09mm2.9mm1.5mmNoROHS3 CompliantLead Free-------
-
ACTIVE (Last Updated: 2 days ago)2 Weeks-Surface MountTO-236-3, SC-59, SOT-23-3YES3Tape & Reel (TR)2007e3yesActive1 (Unlimited)3EAR99150°C-55°CBUILT-IN BIAS RESISTORBIP General Purpose Small Signal50V338mWDUALGULL WING260100mA40-31NPNSingle230mWSWITCHINGHalogen FreeNPN - Pre-Biased50V100mA120 @ 5mA 10V500nA250mV @ 1mA, 10mA50V--12047 k Ω100mA----NoROHS3 CompliantLead FreeTin (Sn)-----
-
ACTIVE (Last Updated: 2 days ago)8 Weeks-Surface MountSC-74, SOT-457YES3Tape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99150°C-55°C-BIP General Purpose Small Signal-230mWDUALGULL WING----31NPNSingle-SWITCHINGHalogen FreeNPN - Pre-Biased250mV100mA80 @ 5mA 10V500nA250mV @ 1mA, 10mA50V--802.2 k Ω-47 k Ω---NoROHS3 CompliantLead FreeTin (Sn)-----
-
---Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2008e0-Obsolete1 (Unlimited)3EAR99150°C-55°CBUILT IN BIAS RESISTOR RATIO IS 1BIP General Purpose Small Signal-50V230mWDUALGULL WING240-100mA30MUN211131PNPSingle230mWSWITCHING-PNP - Pre-Biased250mV100mA35 @ 5mA 10V500nA250mV @ 300μA, 10mA50V--3510 k Ω100mA10 k Ω----Non-RoHS CompliantContains LeadTin/Lead (Sn/Pb)Surface Mount8541.21.00.95not_compliantR-PDSO-G3Not Qualified
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
10 November 2023
1N4001 and 1N4148 Diodes: What's the Difference?
Ⅰ. What is a diode?Ⅱ.Overview of 1N4001 rectifier diodeⅢ. Overview of 1N4148 switching diodeⅣ. 1N4001 vs 1N4148: SymbolⅤ. 1N4001 vs 1N4148: FeaturesⅥ. 1N4001 vs 1N4148: Technical parametersⅦ. 1N4001... -
13 November 2023
Do You Know About the NE555P Timer?
Ⅰ. NE555P descriptionⅡ. What are the features of NE555P timer?Ⅲ. Symbol, footprint and pin configuration of NE555P timerⅣ. What are the applications of NE555P timer?Ⅴ. Technical parameters of... -
13 November 2023
STM32F103RCT6 Microcontroller: Equivalents, Pin Configuration, Advantages and Disadvantages and More
Ⅰ. What is a microcontroller?Ⅱ. STM32F103RCT6 descriptionⅢ. Symbol, footprint and pin configuration of STM32F103RCT6 microcontrollerⅣ. Features of STM32F103RCT6 microcontrollerⅤ. Technical parameters of STM32F103RCT6 microcontrollerⅥ. Advantages and disadvantages of... -
14 November 2023
BAT54S Schottky Diode Structure, Technical Parameters, Package and Other Details
Ⅰ. Overview of BAT54S diodeⅡ. BAT54S symbol, footprint and pin configurationⅢ. Structure and working principle of BAT54S diodeⅣ. What are the features of BAT54S diode?Ⅴ. Technical parameters of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.