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MT8HTF12864HY-53ED3

Micron Technology Inc. MT8HTF12864HY-53ED3

Part Number:
MT8HTF12864HY-53ED3
Manufacturer:
Micron Technology Inc.
Ventron No:
3322826-MT8HTF12864HY-53ED3
Description:
MODULE DDR2 SDRAM 1GB 200SODIMM
ECAD Model:
Datasheet:
MT8HTF12864HY-53ED3

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Specifications
Micron Technology Inc. MT8HTF12864HY-53ED3 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT8HTF12864HY-53ED3.
  • Package / Case
    200-SODIMM
  • Number of Pins
    200
  • Packaging
    Bulk
  • Published
    2004
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Memory Size
    1GB
  • Speed
    533MT/s
  • Memory Type
    DDR2 SDRAM
  • Height
    30mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy MT8HTF12864HY-53ED3.
MT8HTF12864HY-53ED3 More Descriptions
Module DDR2 Sdram 1GB 200SODIMM
Product Comparison
The three parts on the right have similar specifications to MT8HTF12864HY-53ED3.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Number of Pins
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Memory Size
    Speed
    Memory Type
    Height
    RoHS Status
    Lead Free
    Factory Lead Time
    Mount
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Technology
    Terminal Position
    Supply Voltage
    Terminal Pitch
    Operating Supply Voltage
    Number of Elements
    Temperature Grade
    Max Supply Voltage
    Min Supply Voltage
    Supply Current-Max
    Data Bus Width
    Output Characteristics
    Memory Width
    Standby Current-Max
    Max Frequency
    Access Time (Max)
    I/O Type
    Radiation Hardening
    Surface Mount
    Terminal Form
    Reach Compliance Code
    Qualification Status
    Operating Temperature (Max)
    Power Supplies
    Clock Frequency
    Organization
    Memory Density
    Refresh Cycles
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • MT8HTF12864HY-53ED3
    MT8HTF12864HY-53ED3
    Micron Technology Inc.
    200-SODIMM
    200
    Bulk
    2004
    Discontinued
    1 (Unlimited)
    1GB
    533MT/s
    DDR2 SDRAM
    30mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT8HTF12864HDY-40EA3
    MT8HTF12864HDY-40EA3
    Micron Technology Inc.
    200-SODIMM
    200
    Bulk
    2010
    Discontinued
    1 (Unlimited)
    1GB
    400MT/s
    DDR2 SDRAM
    30mm
    ROHS3 Compliant
    Lead Free
    16 Weeks
    Socket
    200
    70°C
    0°C
    DRAMs
    CMOS
    DUAL
    1.8V
    0.6mm
    1.8V
    8
    COMMERCIAL
    1.9V
    1.7V
    1.92mA
    64b
    3-STATE
    64
    0.04A
    400MHz
    0.6 ns
    COMMON
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MT8HTF12864HY-53ED3 vs MT8HTF12864HDY-40EA3
  • MT8HTF12864HDY-53EA3
    MT8HTF12864HDY-53EA3
    Micron Technology Inc.
    200-SODIMM
    200
    Bulk
    2010
    Discontinued
    1 (Unlimited)
    1GB
    533MT/s
    DDR2 SDRAM
    30mm
    ROHS3 Compliant
    Lead Free
    -
    -
    200
    -
    -
    DRAMs
    CMOS
    DUAL
    1.8V
    0.6mm
    -
    -
    COMMERCIAL
    -
    -
    2mA
    -
    3-STATE
    64
    0.04A
    -
    0.5 ns
    COMMON
    -
    NO
    NO LEAD
    unknown
    Not Qualified
    65°C
    1.8V
    267MHz
    128MX64
    8589934592 bit
    8192
    -
    -
    -
    -
    -
    MT8HTF12864HY-53ED3 vs MT8HTF12864HDY-53EA3
  • MT8HTF12864HY-40EA3
    MT8HTF12864HY-40EA3
    Micron Technology Inc.
    200-SODIMM
    200
    Bulk
    2004
    Discontinued
    1 (Unlimited)
    1GB
    400MT/s
    DDR2 SDRAM
    30mm
    ROHS3 Compliant
    Lead Free
    -
    -
    200
    85°C
    0°C
    DRAMs
    CMOS
    DUAL
    1.8V
    0.6mm
    1.8V
    -
    COMMERCIAL
    -
    -
    2.08mA
    64b
    3-STATE
    64
    -
    400MHz
    0.6 ns
    COMMON
    No
    NO
    -
    -
    -
    -
    -
    -
    128MX64
    8589934592 bit
    8192
    e3
    yes
    MATTE TIN
    260
    30
    MT8HTF12864HY-53ED3 vs MT8HTF12864HY-40EA3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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