Micron Technology Inc. MT53B256M32D1GZ-062 WT ES:B TR
- Part Number:
- MT53B256M32D1GZ-062 WT ES:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3235419-MT53B256M32D1GZ-062 WT ES:B TR
- Description:
- IC SDRAM 8GBIT 1.6GHZ 200FBGA
- Datasheet:
- MT53B256M32D1GZ-062 WT ES:B TR
Micron Technology Inc. MT53B256M32D1GZ-062 WT ES:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT53B256M32D1GZ-062 WT ES:B TR.
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / Case200-WFBGA
- Operating Temperature-30°C~85°C TC
- PackagingTape & Reel (TR)
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - Mobile LPDDR4
- Voltage - Supply1.1V
- Memory Size8Gb 256M x 32
- Memory TypeVolatile
- Clock Frequency1600MHz
- Memory FormatDRAM
- RoHS StatusROHS3 Compliant
MT53B256M32D1GZ-062 WT ES:B TR Overview
The package or case of this particular electronic component is a 200-WFBGA, which stands for Wafer-Level Ball Grid Array. This type of package is commonly used for integrated circuits and offers a compact and efficient design. The operating temperature range for this component is -30°C to 85°C, making it suitable for use in a variety of environments. However, it is important to note that the part status is now obsolete, which means it is no longer being manufactured. The moisture sensitivity level (MSL) for this component is 3, which means it can withstand up to 168 hours of exposure to moisture without being damaged. The voltage supply for this component is 1.1V, and it has a memory size of 8Gb 256M x 32. This indicates that it has a total memory capacity of 8 gigabits, with each chip containing 256 megabits and 32 data lines. The memory type for this component is volatile, which means it requires a constant power supply to retain data. It has a clock frequency of 1600MHz, which is the speed at which data can be transferred. The memory format for this component is DRAM, which stands for Dynamic Random Access Memory. Lastly, it is important to note that this component is ROHS3 compliant, meaning it meets the requirements for the Restriction of Hazardous Substances Directive.
MT53B256M32D1GZ-062 WT ES:B TR Features
Package / Case: 200-WFBGA
MT53B256M32D1GZ-062 WT ES:B TR Applications
There are a lot of Micron Technology Inc.
MT53B256M32D1GZ-062 WT ES:B TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The package or case of this particular electronic component is a 200-WFBGA, which stands for Wafer-Level Ball Grid Array. This type of package is commonly used for integrated circuits and offers a compact and efficient design. The operating temperature range for this component is -30°C to 85°C, making it suitable for use in a variety of environments. However, it is important to note that the part status is now obsolete, which means it is no longer being manufactured. The moisture sensitivity level (MSL) for this component is 3, which means it can withstand up to 168 hours of exposure to moisture without being damaged. The voltage supply for this component is 1.1V, and it has a memory size of 8Gb 256M x 32. This indicates that it has a total memory capacity of 8 gigabits, with each chip containing 256 megabits and 32 data lines. The memory type for this component is volatile, which means it requires a constant power supply to retain data. It has a clock frequency of 1600MHz, which is the speed at which data can be transferred. The memory format for this component is DRAM, which stands for Dynamic Random Access Memory. Lastly, it is important to note that this component is ROHS3 compliant, meaning it meets the requirements for the Restriction of Hazardous Substances Directive.
MT53B256M32D1GZ-062 WT ES:B TR Features
Package / Case: 200-WFBGA
MT53B256M32D1GZ-062 WT ES:B TR Applications
There are a lot of Micron Technology Inc.
MT53B256M32D1GZ-062 WT ES:B TR Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT53B256M32D1GZ-062 WT ES:B TR More Descriptions
IC SDRAM 8GBIT 1.6GHZ 200FBGA
DRAM LPDDR4 8G 256MX32 FBGA
IC DRAM 8G 1600MHZ 200FBGA
SPECIAL/CUSTOM LPDDR4
DRAM LPDDR4 8G 256MX32 FBGA
IC DRAM 8G 1600MHZ 200FBGA
SPECIAL/CUSTOM LPDDR4
The three parts on the right have similar specifications to MT53B256M32D1GZ-062 WT ES:B TR.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatRoHS StatusView Compare
-
MT53B256M32D1GZ-062 WT ES:B TR10 WeeksSurface Mount200-WFBGA-30°C~85°C TCTape & Reel (TR)Obsolete3 (168 Hours)SDRAM - Mobile LPDDR41.1V8Gb 256M x 32Volatile1600MHzDRAMROHS3 Compliant-
-
13 WeeksSurface Mount200-WFBGA-40°C~95°C TCTrayActive-SDRAM - Mobile LPDDR41.1V8Gb 256M x 32Volatile1600MHzDRAM-
-
-Surface Mount200-VFBGA-30°C~85°C TCTrayNot For New Designs3 (168 Hours)SDRAM - Mobile LPDDR41.1V24Gb 768M x 32Volatile1600MHzDRAMROHS3 Compliant
-
9 Weeks---30°C~105°C TCTrayActive-SDRAM - Mobile LPDDR41.1V16Gb 256M x 64Volatile1600MHzDRAM-
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