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MT4HTF6464HY-667E1

Micron Technology Inc. MT4HTF6464HY-667E1

Part Number:
MT4HTF6464HY-667E1
Manufacturer:
Micron Technology Inc.
Ventron No:
3323046-MT4HTF6464HY-667E1
Description:
MOD DDR2 SDRAM 512MB 200SODIMM
ECAD Model:
Datasheet:
MT4HTF6464HY-667E1

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Specifications
Micron Technology Inc. MT4HTF6464HY-667E1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT4HTF6464HY-667E1.
  • Mount
    Socket
  • Package / Case
    200-SODIMM
  • Number of Pins
    200
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    200
  • Max Operating Temperature
    70°C
  • Min Operating Temperature
    0°C
  • Subcategory
    DRAMs
  • Technology
    CMOS
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.6mm
  • Reach Compliance Code
    unknown
  • Qualification Status
    Not Qualified
  • Operating Supply Voltage
    1.8V
  • Number of Elements
    4
  • Temperature Grade
    COMMERCIAL
  • Max Supply Voltage
    1.9V
  • Min Supply Voltage
    1.7V
  • Memory Size
    512MB
  • Speed
    667MT/s
  • Memory Type
    DDR2 SDRAM
  • Clock Frequency
    333MHz
  • Output Characteristics
    3-STATE
  • Memory Width
    64
  • Standby Current-Max
    0.028A
  • Max Frequency
    667MHz
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • RoHS Status
    ROHS3 Compliant
Description
Images are for reference only.See Product Specifications for product details.If you are interested to buy Micron Technology MT4HTF6464HY-667E1.
MT4HTF6464HY-667E1 More Descriptions
DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM Tray
MOD DDR2 SDRAM 512MB 200SODIMM
MODULE DDR2 512MB 200-SODIMM
DDR2-667 512MB(64M16)
Product Comparison
The three parts on the right have similar specifications to MT4HTF6464HY-667E1.
  • Image
    Part Number
    Manufacturer
    Mount
    Package / Case
    Number of Pins
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Max Operating Temperature
    Min Operating Temperature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Qualification Status
    Operating Supply Voltage
    Number of Elements
    Temperature Grade
    Max Supply Voltage
    Min Supply Voltage
    Memory Size
    Speed
    Memory Type
    Clock Frequency
    Output Characteristics
    Memory Width
    Standby Current-Max
    Max Frequency
    I/O Type
    Refresh Cycles
    RoHS Status
    Published
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Data Bus Width
    Radiation Hardening
    ECCN Code
    Additional Feature
    Number of Functions
    Pin Count
    Number of Ports
    Organization
    Memory Density
    Access Mode
    Height Seated (Max)
    Length
    Surface Mount
    Packaging
    Supply Current-Max
    Access Time (Max)
    Height
    Lead Free
    View Compare
  • MT4HTF6464HY-667E1
    MT4HTF6464HY-667E1
    Micron Technology Inc.
    Socket
    200-SODIMM
    200
    Obsolete
    1 (Unlimited)
    200
    70°C
    0°C
    DRAMs
    CMOS
    DUAL
    NO LEAD
    1.8V
    0.6mm
    unknown
    Not Qualified
    1.8V
    4
    COMMERCIAL
    1.9V
    1.7V
    512MB
    667MT/s
    DDR2 SDRAM
    333MHz
    3-STATE
    64
    0.028A
    667MHz
    COMMON
    8192
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT4HTF3264HZ-667G1
    MT4HTF3264HZ-667G1
    Micron Technology Inc.
    Socket
    200-SODIMM
    200
    Obsolete
    3 (168 Hours)
    200
    70°C
    0°C
    DRAMs
    CMOS
    DUAL
    -
    1.8V
    0.6mm
    -
    -
    1.8V
    4
    COMMERCIAL
    1.9V
    1.7V
    256MB
    667MT/s
    DDR2 SDRAM
    333MHz
    3-STATE
    64
    0.028A
    667MHz
    COMMON
    8192
    ROHS3 Compliant
    2010
    e3
    yes
    MATTE TIN
    260
    30
    64b
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MT4HTF6464HY-667E1 vs MT4HTF3264HZ-667G1
  • MT4HTF3264HZ-800G1
    MT4HTF3264HZ-800G1
    Micron Technology Inc.
    Socket
    200-SODIMM
    200
    Obsolete
    1 (Unlimited)
    200
    70°C
    0°C
    DRAMs
    CMOS
    DUAL
    -
    1.8V
    0.6mm
    -
    -
    1.8V
    4
    OTHER
    1.9V
    1.7V
    256MB
    800MT/s
    DDR2 SDRAM
    -
    3-STATE
    16
    0.028A
    800MHz
    COMMON
    8192
    ROHS3 Compliant
    2014
    e3
    yes
    MATTE TIN
    260
    30
    64b
    No
    EAR99
    AUTO/SELF REFRESH
    1
    200
    1
    32MX16
    536870912 bit
    SINGLE BANK PAGE BURST
    30.15mm
    67.6mm
    -
    -
    -
    -
    -
    -
    MT4HTF6464HY-667E1 vs MT4HTF3264HZ-800G1
  • MT4HTF3264HY-53ED3
    MT4HTF3264HY-53ED3
    Micron Technology Inc.
    -
    200-SODIMM
    200
    Obsolete
    1 (Unlimited)
    200
    70°C
    0°C
    DRAMs
    CMOS
    DUAL
    -
    1.8V
    0.6mm
    -
    -
    1.8V
    -
    COMMERCIAL
    -
    -
    256MB
    533MT/s
    DDR2 SDRAM
    267MHz
    3-STATE
    64
    0.028A
    533MHz
    COMMON
    8192
    ROHS3 Compliant
    2004
    -
    -
    -
    -
    -
    64b
    No
    -
    -
    -
    -
    -
    32MX64
    2147483648 bit
    -
    -
    -
    NO
    Bulk
    1.36mA
    0.5 ns
    30mm
    Lead Free
    MT4HTF6464HY-667E1 vs MT4HTF3264HY-53ED3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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