Micron Technology Inc. MT4HTF3264HZ-800H1

Name: MT4HTF3264HZ-800H1
Brand: Micron Technology Inc.
SKU: 3787071-MT4HTF3264HZ-800H1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT4HTF3264HZ-800H1

Manufacturer:: Micron Technology Inc.

Ventron No:: 3787071-MT4HTF3264HZ-800H1

Description:: MOD DDR2 SDRAM 256MB 200SODIMM

ECAD Model:

Datasheet:: MT4HTF3264HZ-800H1

Specifications

Micron Technology Inc. MT4HTF3264HZ-800H1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT4HTF3264HZ-800H1.

Factory Lead Time
5 Weeks
Package / Case
200-SODIMM
Number of Pins
200
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Operating Supply Voltage
1.8V
Memory Size
256MB
Speed
800MT/s
Memory Type
DDR2 SDRAM
Data Bus Width
64b
Max Frequency
400MHz
RoHS Status
ROHS3 Compliant

Description

part#MT4HTF3264HZ-800H1, Manufacturer:Micron Technology is available at ventronchip.com, see description of MT4HTF3264HZ-800H1 as below .use the request quote form to request MT4HTF3264HZ-800H1 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for MT4HTF3264HZ-800H1 depending on the quantity required, availability and warehouse location.

MT4HTF3264HZ-800H1 More Descriptions

DDR2 SDRAM 32MX64 256MB 1.8V SODIMM COMMERCIAL
DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM
MODUL DDR2 SDRAM 256MB 200SODIMM

Product Comparison

The three parts on the right have similar specifications to MT4HTF3264HZ-800H1.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Number of Pins

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Operating Supply Voltage

Memory Size

Speed

Memory Type

Data Bus Width

Max Frequency

RoHS Status

Mount

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Temperature Grade

Max Supply Voltage

Min Supply Voltage

Clock Frequency

Output Characteristics

Memory Width

Standby Current-Max

I/O Type

Refresh Cycles

Radiation Hardening

Surface Mount

Packaging

Supply Current-Max

Organization

Memory Density

Access Time (Max)

Height

Lead Free

View Compare
MT4HTF3264HZ-800H1

Micron Technology Inc.

5 Weeks

200-SODIMM

200

2014

Obsolete

3 (168 Hours)

70°C

0°C

1.8V

256MB

800MT/s

DDR2 SDRAM

64b

400MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT4HTF3264HZ-667G1

Micron Technology Inc.

-

200-SODIMM

200

2010

Obsolete

3 (168 Hours)

70°C

0°C

1.8V

256MB

667MT/s

DDR2 SDRAM

64b

667MHz

ROHS3 Compliant

Socket

e3

yes

200

MATTE TIN

DRAMs

CMOS

DUAL

260

1.8V

0.6mm

30

4

COMMERCIAL

1.9V

1.7V

333MHz

3-STATE

64

0.028A

COMMON

8192

No

-

-

-

-

-

-

-

-

MT4HTF3264HZ-800H1 vs MT4HTF3264HZ-667G1
MT4HTF3264HY-40ED3

Micron Technology Inc.

-

200-SODIMM

200

2004

Discontinued

1 (Unlimited)

70°C

0°C

1.8V

256MB

400MT/s

DDR2 SDRAM

64b

400MHz

ROHS3 Compliant

-

-

-

200

-

DRAMs

CMOS

DUAL

-

1.8V

0.6mm

-

-

COMMERCIAL

-

-

-

3-STATE

64

0.028A

COMMON

8192

No

NO

Bulk

1.36mA

32MX64

2147483648 bit

0.6 ns

30mm

Lead Free

MT4HTF3264HZ-800H1 vs MT4HTF3264HY-40ED3
MT4HTF3264HY-53ED3

Micron Technology Inc.

-

200-SODIMM

200

2004

Obsolete

1 (Unlimited)

70°C

0°C

1.8V

256MB

533MT/s

DDR2 SDRAM

64b

533MHz

ROHS3 Compliant

-

-

-

200

-

DRAMs

CMOS

DUAL

-

1.8V

0.6mm

-

-

COMMERCIAL

-

-

267MHz

3-STATE

64

0.028A

COMMON

8192

No

NO

Bulk

1.36mA

32MX64

2147483648 bit

0.5 ns

30mm

Lead Free

MT4HTF3264HZ-800H1 vs MT4HTF3264HY-53ED3