Micron Technology Inc. MT49H8M36FM-5 TR
- Part Number:
- MT49H8M36FM-5 TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3252085-MT49H8M36FM-5 TR
- Description:
- IC RLDRAM 288MBIT 200MHZ 144UBGA
- Datasheet:
- MT49H32M9/16M18/8M36 MT49H32/16/8Mx(x)
Description
The Micron288Mb is a high-performance DDR memory module with a capacity of 32 Meg x 9, 16 Meg x 18, or 8 Meg x 36. It operates at a clock frequency of 533 MHz, providing a peak bandwidth of 38.4 Gb/s. The module features 8 internal banks for concurrent operation and maximum bandwidth, and a reduced cycle time of 15ns at 533 MHz.
Features
533 MHz DDR operation (1.067 Gb/s/pin data rate)
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
Organization: 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36
8 internal banks for concurrent operation and maximum bandwidth
Reduced cycle time (15ns at 533 MHz)
Nonmultiplexed addresses (address multiplexing option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time, and burst sequence length
Balanced READ and WRITE latencies for optimized data bus utilization
Data mask for WRITE commands
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and output data clock signals
Data valid signal (QVLD)
32ms refresh (8K refresh for each bank: 64K refresh command must be issued in total each 32ms)
144-ball μBGA package
HSTL I/O (1.5V or 1.8V nominal)
25-6002 matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
Applications
The Micron288Mb is suitable for a wide range of applications, including:
High-performance computing
Networking
Gaming
Consumer electronics
The Micron288Mb is a high-performance DDR memory module with a capacity of 32 Meg x 9, 16 Meg x 18, or 8 Meg x 36. It operates at a clock frequency of 533 MHz, providing a peak bandwidth of 38.4 Gb/s. The module features 8 internal banks for concurrent operation and maximum bandwidth, and a reduced cycle time of 15ns at 533 MHz.
Features
533 MHz DDR operation (1.067 Gb/s/pin data rate)
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
Organization: 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36
8 internal banks for concurrent operation and maximum bandwidth
Reduced cycle time (15ns at 533 MHz)
Nonmultiplexed addresses (address multiplexing option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time, and burst sequence length
Balanced READ and WRITE latencies for optimized data bus utilization
Data mask for WRITE commands
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and output data clock signals
Data valid signal (QVLD)
32ms refresh (8K refresh for each bank: 64K refresh command must be issued in total each 32ms)
144-ball μBGA package
HSTL I/O (1.5V or 1.8V nominal)
25-6002 matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
Applications
The Micron288Mb is suitable for a wide range of applications, including:
High-performance computing
Networking
Gaming
Consumer electronics
Micron Technology Inc. MT49H8M36FM-5 TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT49H8M36FM-5 TR.
- Mounting TypeSurface Mount
- Package / Case144-XFBGA
- Supplier Device Package144-μBGA (18.5x11)
- Operating Temperature0°C~95°C TC
- PackagingTape & Reel (TR)
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyDRAM
- Voltage - Supply1.7V~1.9V
- Base Part NumberMT49H8M36
- Memory Size288Mb 8M x 36
- Memory TypeVolatile
- Clock Frequency200MHz
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
The three parts on the right have similar specifications to MT49H8M36FM-5 TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceRoHS StatusMountNumber of PinsJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Number of PortsSupply Current-MaxData Bus WidthOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxMax FrequencyI/O TypeSequential Burst LengthLengthHeight Seated (Max)Radiation HardeningLead FreeFactory Lead TimeSurface MountOperating ModeView Compare
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MT49H8M36FM-5 TRSurface Mount144-XFBGA144-μBGA (18.5x11)0°C~95°C TCTape & Reel (TR)2008Obsolete3 (168 Hours)DRAM1.7V~1.9VMT49H8M36288Mb 8M x 36Volatile200MHz20nsDRAMParallelROHS3 Compliant-------------------------------------
-
Surface Mount144-TFBGA-0°C~95°C TCBulk2011Obsolete3 (168 Hours)CMOS1.7V~1.9VMT49H32M18576Mb 32M x 18Volatile-20nsDRAMParallelROHS3 CompliantSurface Mount144e1144EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO REFRESH8542.32.00.32BOTTOM11.8V1mm1441.8V1.9V1.5/1.81.82.5V1.7V10.655mA18b32MX183-STATE1824b576 Mb0.055A400MHzCOMMON24818.5mm1.2mmNoLead Free---
-
Surface Mount144-TFBGA144-μBGA (18.5x11)0°C~95°C TCTape & Reel (TR)2008Obsolete3 (168 Hours)DRAM1.7V~1.9VMT49H16M18288Mb 16M x 18Volatile300MHz20nsDRAMParallelROHS3 Compliant------------------------------------
-
Surface Mount144-TFBGA-0°C~95°C TCTray-Obsolete3 (168 Hours)CMOS1.7V~1.9V-576Mb 32M x 18Volatile-15nsDRAMParallelROHS3 Compliant-144-144--AUTO REFRESH-BOTTOM11.8V1mm-1.8V1.9V-1.7V1--32MX18-1820b576 Mb-400MHz--18.5mm1.2mm--9 WeeksYESSYNCHRONOUS
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