Micron Technology Inc. MT49H32M18SJ-25E:B
- Part Number:
- MT49H32M18SJ-25E:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3236852-MT49H32M18SJ-25E:B
- Description:
- IC RLDRAM 576MBIT 400MHZ 144FBGA
- Datasheet:
- MT49H64M9, 32M18, 16M36
Micron Technology Inc. MT49H32M18SJ-25E:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT49H32M18SJ-25E:B.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / Case144-TFBGA
- Number of Pins144
- Supplier Device Package144-FBGA (18.5x11)
- Operating Temperature0°C~95°C TC
- PackagingTray
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Max Operating Temperature95°C
- Min Operating Temperature0°C
- TechnologyDRAM
- Voltage - Supply1.7V~1.9V
- Operating Supply Voltage1.8V
- InterfaceParallel
- Memory Size576Mb 32M x 18
- Memory TypeVolatile
- Clock Frequency400MHz
- Access Time15ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Address Bus Width20b
- Density576 Mb
- Max Frequency400MHz
- RoHS StatusROHS3 Compliant
MT49H32M18SJ-25E:B Overview
This product is a DRAM with a density of 576 Mb, designed for volatile memory applications. It has 144 pins and operates at a maximum frequency of 400MHz. The operating temperature range is 0°C to 95°C, with a published year of 2015. The packaging for this product is in a tray format, providing convenience and protection during transportation and storage. With a minimum operating temperature of 0°C and a maximum operating temperature of 95°C, this product is suitable for use in a wide range of environments. The advanced technology used in this product ensures reliable and efficient performance.
MT49H32M18SJ-25E:B Features
Package / Case: 144-TFBGA
144 Pins
Operating Supply Voltage:1.8V
MT49H32M18SJ-25E:B Applications
There are a lot of Micron Technology Inc.
MT49H32M18SJ-25E:B Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
This product is a DRAM with a density of 576 Mb, designed for volatile memory applications. It has 144 pins and operates at a maximum frequency of 400MHz. The operating temperature range is 0°C to 95°C, with a published year of 2015. The packaging for this product is in a tray format, providing convenience and protection during transportation and storage. With a minimum operating temperature of 0°C and a maximum operating temperature of 95°C, this product is suitable for use in a wide range of environments. The advanced technology used in this product ensures reliable and efficient performance.
MT49H32M18SJ-25E:B Features
Package / Case: 144-TFBGA
144 Pins
Operating Supply Voltage:1.8V
MT49H32M18SJ-25E:B Applications
There are a lot of Micron Technology Inc.
MT49H32M18SJ-25E:B Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT49H32M18SJ-25E:B More Descriptions
DRAM Chip RLDRAM2 576M-Bit 32Mx18 1.8V 144-Pin F-BGA
IC DRAM 576MBIT PARALLEL 144FBGA
DRAM RLDRAM 576M 32MX18 FBGA
OEMs, CMs ONLY (NO BROKERS)
32 M x 18 x 8 Banks RL DRAM
IC REG BUCK ADJ/5V DIE
IC DRAM 576MBIT PARALLEL 144FBGA
DRAM RLDRAM 576M 32MX18 FBGA
OEMs, CMs ONLY (NO BROKERS)
32 M x 18 x 8 Banks RL DRAM
IC REG BUCK ADJ/5V DIE
The three parts on the right have similar specifications to MT49H32M18SJ-25E:B.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyVoltage - SupplyOperating Supply VoltageInterfaceMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceAddress Bus WidthDensityMax FrequencyRoHS StatusMountJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberPin CountSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Number of PortsSupply Current-MaxData Bus WidthOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxI/O TypeSequential Burst LengthLengthHeight Seated (Max)Radiation HardeningLead FreeSurface MountOperating ModeView Compare
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MT49H32M18SJ-25E:B9 WeeksSurface Mount144-TFBGA144144-FBGA (18.5x11)0°C~95°C TCTray2015Active3 (168 Hours)95°C0°CDRAM1.7V~1.9V1.8VParallel576Mb 32M x 18Volatile400MHz15nsDRAMParallel20b576 Mb400MHzROHS3 Compliant--------------------------------
-
-Surface Mount144-TFBGA144-0°C~95°C TCBulk2011Obsolete3 (168 Hours)--CMOS1.7V~1.9V1.8V-576Mb 32M x 18Volatile-20nsDRAMParallel24b576 Mb400MHzROHS3 CompliantSurface Mounte1144EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO REFRESH8542.32.00.32BOTTOM11.8V1mmMT49H32M181441.9V1.5/1.81.82.5V1.7V10.655mA18b32MX183-STATE180.055ACOMMON24818.5mm1.2mmNoLead Free--
-
-----0°C~95°C TCTray-Obsolete3 (168 Hours)--DRAM1.7V~1.9V--288Mb 16M x 18Volatile400MHz20nsDRAMParallel---ROHS3 Compliant-------------------------------
-
9 WeeksSurface Mount144-TFBGA144-0°C~95°C TCTray-Obsolete3 (168 Hours)--CMOS1.7V~1.9V1.8V-576Mb 32M x 18Volatile-15nsDRAMParallel20b576 Mb400MHzROHS3 Compliant--144--AUTO REFRESH-BOTTOM11.8V1mm--1.9V-1.7V1--32MX18-18---18.5mm1.2mm--YESSYNCHRONOUS
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