Micron Technology Inc. MT49H32M18BM-33:B
- Part Number:
- MT49H32M18BM-33:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3244727-MT49H32M18BM-33:B
- Description:
- IC RLDRAM 576MBIT 300MHZ 144UBGA
- Datasheet:
- MT49H64/32/16Mx(x)
Micron Technology Inc. MT49H32M18BM-33:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT49H32M18BM-33:B.
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case144-TFBGA
- Number of Pins144
- Operating Temperature0°C~95°C TC
- PackagingBulk
- Published2011
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations144
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO REFRESH
- HTS Code8542.32.00.32
- TechnologyCMOS
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Base Part NumberMT49H32M18
- Pin Count144
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.5/1.81.82.5V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size576Mb 32M x 18
- Number of Ports1
- Memory TypeVolatile
- Supply Current-Max0.53mA
- Access Time20ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width18b
- Organization32MX18
- Output Characteristics3-STATE
- Memory Width18
- Address Bus Width24b
- Density576 Mb
- Standby Current-Max0.055A
- Max Frequency300MHz
- I/O TypeCOMMON
- Sequential Burst Length248
- Height Seated (Max)1.2mm
- Length18.5mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT49H32M18BM-33:B Overview
The contact plating for this package is made up of copper, silver, and tin. The package or case is a 144-TFBGA, with a terminal pitch of 1mm. The base part number for this product is MT49H32M18. It operates at a supply voltage of 1.8V and has a memory size of 576Mb 32M x 18. The memory interface is parallel and the memory width is 18. With a density of 576 Mb, this product is able to store a large amount of data. Additionally, it is compliant with the RoHS3 standard, ensuring that it is environmentally friendly. Overall, this product offers high performance and reliability for various electronic applications.
MT49H32M18BM-33:B Features
Package / Case: 144-TFBGA
144 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO REFRESH
I/O Type: COMMON
MT49H32M18BM-33:B Applications
There are a lot of Micron Technology Inc.
MT49H32M18BM-33:B Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The contact plating for this package is made up of copper, silver, and tin. The package or case is a 144-TFBGA, with a terminal pitch of 1mm. The base part number for this product is MT49H32M18. It operates at a supply voltage of 1.8V and has a memory size of 576Mb 32M x 18. The memory interface is parallel and the memory width is 18. With a density of 576 Mb, this product is able to store a large amount of data. Additionally, it is compliant with the RoHS3 standard, ensuring that it is environmentally friendly. Overall, this product offers high performance and reliability for various electronic applications.
MT49H32M18BM-33:B Features
Package / Case: 144-TFBGA
144 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO REFRESH
I/O Type: COMMON
MT49H32M18BM-33:B Applications
There are a lot of Micron Technology Inc.
MT49H32M18BM-33:B Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT49H32M18BM-33:B More Descriptions
DRAM Chip RLDRAM 576M-Bit 32Mx18 1.8V 144-Pin M-BGA Tray
Ddr Dram, 32Mx18, 20Ns, Cmos, Pbga144 |Micron MT49H32M18BM-33:B
IC DRAM 576MBIT PARALLEL 144UBGA
IC NVSRAM 256K PARALLEL 34PWRCAP
Ddr Dram, 32Mx18, 20Ns, Cmos, Pbga144 |Micron MT49H32M18BM-33:B
IC DRAM 576MBIT PARALLEL 144UBGA
IC NVSRAM 256K PARALLEL 34PWRCAP
The three parts on the right have similar specifications to MT49H32M18BM-33:B.
-
ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeSupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthAddress Bus WidthDensityStandby Current-MaxMax FrequencyI/O TypeSequential Burst LengthHeight Seated (Max)LengthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageClock FrequencyFactory Lead TimeSurface MountOperating ModeView Compare
-
MT49H32M18BM-33:BCopper, Silver, TinSurface MountSurface Mount144-TFBGA1440°C~95°C TCBulk2011e1Obsolete3 (168 Hours)144EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO REFRESH8542.32.00.32CMOS1.7V~1.9VBOTTOM11.8V1mmMT49H32M181441.8V1.9V1.5/1.81.82.5V1.7V576Mb 32M x 181Volatile0.53mA20nsDRAMParallel18b32MX183-STATE1824b576 Mb0.055A300MHzCOMMON2481.2mm18.5mmNoROHS3 CompliantLead Free------
-
--Surface Mount144-TFBGA-0°C~95°C TCTape & Reel (TR)2008-Obsolete3 (168 Hours)-----DRAM1.7V~1.9V----MT49H16M18-----288Mb 16M x 18-Volatile-20nsDRAMParallel-------------ROHS3 Compliant-144-μBGA (18.5x11)300MHz---
-
-----0°C~95°C TCTray--Obsolete3 (168 Hours)-----DRAM1.7V~1.9V----------288Mb 16M x 18-Volatile-20nsDRAMParallel-------------ROHS3 Compliant--400MHz---
-
--Surface Mount144-TFBGA1440°C~95°C TCTray--Obsolete3 (168 Hours)144--AUTO REFRESH-CMOS1.7V~1.9VBOTTOM11.8V1mm--1.8V1.9V-1.7V576Mb 32M x 181Volatile-15nsDRAMParallel-32MX18-1820b576 Mb-400MHz--1.2mm18.5mm-ROHS3 Compliant---9 WeeksYESSYNCHRONOUS
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