Micron Technology Inc. MT49H16M18FM-33:B

Description
The MicronCIO RLDRAM 2 is a high-performance, low-power memory device designed for use in high-bandwidth applications. It features a 533 MHz DDR operation, a 38.4 Gb/s peak bandwidth, and a reduced cycle time of 15ns at 533 MHz. The RLDRAM 2 is organized as 32 Meg x 9, 16 Meg x 18, or 8 Meg x 36, and has 8 internal banks for concurrent operation and maximum bandwidth.

Features
533 MHz DDR operation (1.067 Gb/s/pin data rate)
38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
Organization:
32 Meg x 9
16 Meg x 18
8 Meg x 36
8 internal banks for concurrent operation and maximum bandwidth
Reduced cycle time (15ns at 533 MHz)
Nonmultiplexed addresses (address multiplexing option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time, and burst sequence length
Balanced READ and WRITE latencies to optimize data bus utilization
Data mask for WRITE commands
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and output data clock signals
Data valid signal (QVLD)
32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total each 32ms)
HSTL I/O (1.5V or 1.8V nominal)
25-6002 matched impedance outputs
2.5V VEXT: 1.8VVDD - 1.5V or 1.8VVDDQ I/O
On-die termination (ODT) RTT

Applications
The MicronCIO RLDRAM 2 is ideal for use in a variety of high-bandwidth applications, including:
Networking
Storage
Graphics
Gaming
Embedded systems