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MT47H64M8SH-25E AIT:H

Micron Technology Inc. MT47H64M8SH-25E AIT:H

Part Number:
MT47H64M8SH-25E AIT:H
Manufacturer:
Micron Technology Inc.
Ventron No:
3233375-MT47H64M8SH-25E AIT:H
Description:
IC SDRAM 512MBIT 400MHZ 60FBGA
ECAD Model:
Datasheet:
MT47H128M4, MT47H64M8 & MT47H32M16

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Specifications
Micron Technology Inc. MT47H64M8SH-25E AIT:H technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H64M8SH-25E AIT:H.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    60-TFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~95°C TC
  • Packaging
    Tray
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    60
  • Additional Feature
    AUTO/SELF REFRESH
  • Technology
    SDRAM - DDR2
  • Voltage - Supply
    1.7V~1.9V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    MT47H64M8
  • JESD-30 Code
    R-PBGA-B60
  • Supply Voltage-Max (Vsup)
    1.9V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    512Mb 64M x 8
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    400MHz
  • Access Time
    400ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Organization
    64MX8
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    15ns
  • Memory Density
    536870912 bit
  • Screening Level
    AEC-Q100
  • Height Seated (Max)
    1.2mm
  • Length
    10mm
  • Width
    8mm
  • RoHS Status
    ROHS3 Compliant
Description
MT47H64M8SH-25E AIT:H Overview
This product is a surface mount device with a mounting type of Surface Mount and a Surface Mount option available. It has an additional feature of AUTO/SELF REFRESH and belongs to the SDRAM - DDR2 technology. The terminal position is located at the bottom of the device and it is classified under the JESD-30 Code R-PBGA-B60. This product is a volatile memory type with an access time of 400ps. It meets the AEC-Q100 screening level and has a width of 8mm.

MT47H64M8SH-25E AIT:H Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH


MT47H64M8SH-25E AIT:H Applications
There are a lot of Micron Technology Inc.
MT47H64M8SH-25E AIT:H Memory applications.


Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT47H64M8SH-25E AIT:H More Descriptions
DRAM Chip DDR2 SDRAM 512M-Bit 64Mx8 1.8V 60-Pin FBGA
DRAM, DDR2 SDRAM, 512Mb, x8, 60-ball FBGA, RoHSMicron SCT
IC DRAM 512MBIT PARALLEL 60FBGA
Product Comparison
The three parts on the right have similar specifications to MT47H64M8SH-25E AIT:H.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Memory Width
    Write Cycle Time - Word, Page
    Memory Density
    Screening Level
    Height Seated (Max)
    Length
    Width
    RoHS Status
    Published
    View Compare
  • MT47H64M8SH-25E AIT:H
    MT47H64M8SH-25E AIT:H
    Micron Technology Inc.
    4 Weeks
    Surface Mount
    60-TFBGA
    YES
    -40°C~95°C TC
    Tray
    Obsolete
    3 (168 Hours)
    60
    AUTO/SELF REFRESH
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.8mm
    NOT SPECIFIED
    MT47H64M8
    R-PBGA-B60
    1.9V
    1.7V
    512Mb 64M x 8
    1
    Volatile
    SYNCHRONOUS
    400MHz
    400ps
    DRAM
    Parallel
    64MX8
    8
    15ns
    536870912 bit
    AEC-Q100
    1.2mm
    10mm
    8mm
    ROHS3 Compliant
    -
    -
  • MT47H64M8B6-25E L:D TR
    MT47H64M8B6-25E L:D TR
    Micron Technology Inc.
    -
    Surface Mount
    60-FBGA
    -
    0°C~85°C TC
    Tape & Reel (TR)
    Obsolete
    3 (168 Hours)
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    MT47H64M8
    -
    -
    -
    512Mb 64M x 8
    -
    Volatile
    -
    400MHz
    400ps
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    2008
    MT47H64M8SH-25E AIT:H vs MT47H64M8B6-25E L:D TR
  • MT47H64M8SH-25E IT:H TR
    MT47H64M8SH-25E IT:H TR
    Micron Technology Inc.
    -
    Surface Mount
    60-TFBGA
    -
    -40°C~95°C TC
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    512M 64M x 8
    -
    Volatile
    -
    400MHz
    400ps
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    MT47H64M8SH-25E AIT:H vs MT47H64M8SH-25E IT:H TR
  • MT47H256M4SH-25E:M TR
    MT47H256M4SH-25E:M TR
    Micron Technology Inc.
    16 Weeks
    Surface Mount
    60-TFBGA
    -
    0°C~85°C TC
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1Gb 256M x 4
    -
    Volatile
    -
    400MHz
    400ps
    DRAM
    Parallel
    -
    -
    15ns
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    MT47H64M8SH-25E AIT:H vs MT47H256M4SH-25E:M TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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