Micron Technology Inc. MT47H256M8EB-25E IT:C TR
- Part Number:
- MT47H256M8EB-25E IT:C TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3236038-MT47H256M8EB-25E IT:C TR
- Description:
- IC SDRAM 2GBIT 400MHZ 60FBGA
- ECAD Model:
-
- Datasheet:
- MT47H512M4, 256M8, 128M16
Micron Technology Inc. MT47H256M8EB-25E IT:C TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H256M8EB-25E IT:C TR.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Operating Temperature-40°C~95°C TC
- PackagingTape & Reel (TR)
- Published2014
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Base Part NumberMT47H256M8
- Memory Size2Gb 256M x 8
- Memory TypeVolatile
- Clock Frequency400MHz
- Access Time400ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page15ns
- RoHS StatusROHS3 Compliant
MT47H256M8EB-25E IT:C TR Overview
The MT47H256M8, a DRAM memory format with a parallel interface, was first published in 2014. However, it is currently not recommended for new designs. This technology utilizes SDRAM - DDR2 and operates at a voltage supply of 1.7V~1.9V. With a clock frequency of 400MHz and an access time of 400ps, this memory offers fast and efficient data processing. Additionally, the write cycle time for a word or page is only 15ns, making it suitable for high-speed applications. Despite being introduced several years ago, the MT47H256M8 remains a reliable and efficient choice for those seeking a robust and high-performing memory solution.
MT47H256M8EB-25E IT:C TR Features
Package / Case: 60-TFBGA
MT47H256M8EB-25E IT:C TR Applications
There are a lot of Micron Technology Inc.
MT47H256M8EB-25E IT:C TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
The MT47H256M8, a DRAM memory format with a parallel interface, was first published in 2014. However, it is currently not recommended for new designs. This technology utilizes SDRAM - DDR2 and operates at a voltage supply of 1.7V~1.9V. With a clock frequency of 400MHz and an access time of 400ps, this memory offers fast and efficient data processing. Additionally, the write cycle time for a word or page is only 15ns, making it suitable for high-speed applications. Despite being introduced several years ago, the MT47H256M8 remains a reliable and efficient choice for those seeking a robust and high-performing memory solution.
MT47H256M8EB-25E IT:C TR Features
Package / Case: 60-TFBGA
MT47H256M8EB-25E IT:C TR Applications
There are a lot of Micron Technology Inc.
MT47H256M8EB-25E IT:C TR Memory applications.
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
hard disk drive (HDD)
MT47H256M8EB-25E IT:C TR More Descriptions
DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin FBGA T/R
Conv DC-DC Dual Step Down 3.5V to 36V 32-Pin TQFN T/R
IC DRAM 2G PARALLEL 60FBGA
Conv DC-DC Dual Step Down 3.5V to 36V 32-Pin TQFN T/R
IC DRAM 2G PARALLEL 60FBGA
The three parts on the right have similar specifications to MT47H256M8EB-25E IT:C TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyBase Part NumberMemory SizeMemory TypeClock FrequencyAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
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MT47H256M8EB-25E IT:C TR4 WeeksSurface Mount60-TFBGA-40°C~95°C TCTape & Reel (TR)2014Not For New Designs3 (168 Hours)SDRAM - DDR21.7V~1.9VMT47H256M82Gb 256M x 8Volatile400MHz400psDRAMParallel15nsROHS3 Compliant- -
12 WeeksSurface Mount60-TFBGA-40°C~95°C TCTape & Reel (TR)-Active3 (168 Hours)SDRAM - DDR21.7V~1.9V-1Gb 128M x 8Volatile400MHz400psDRAMParallel15nsROHS3 Compliant
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111 WeeksSurface Mount60-TFBGA0°C~85°C TCTape & Reel (TR)-Active3 (168 Hours)SDRAM - DDR21.7V~1.9V-512M 64M x 8Volatile400MHz400psDRAMParallel15nsROHS3 Compliant
-
16 WeeksSurface Mount60-TFBGA0°C~85°C TCTape & Reel (TR)-Active3 (168 Hours)SDRAM - DDR21.7V~1.9V-1Gb 256M x 4Volatile400MHz400psDRAMParallel15nsROHS3 Compliant
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Surface Mount 84 Pin Memory IC MT47H64M16 1 Gb kb 12.5mm mm 160mA mA
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Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
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