Micron Technology Inc. MT47H256M4SH-25E:M
- Part Number:
- MT47H256M4SH-25E:M
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3233328-MT47H256M4SH-25E:M
- Description:
- IC SDRAM 1GBIT 400MHZ 60FBGA
- Datasheet:
- MT47H256M4SH-25E:M
Micron Technology Inc. MT47H256M4SH-25E:M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT47H256M4SH-25E:M.
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Operating Temperature0°C~85°C TC
- PackagingBulk
- Published2014
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.32
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT47H256M4
- Pin Count60
- JESD-30 CodeR-PBGA-B60
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.9V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size1Gb 256M x 4
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency400MHz
- Access Time400ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization256MX4
- Output Characteristics3-STATE
- Memory Width4
- Write Cycle Time - Word, Page15ns
- Memory Density1073741824 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length48
- Interleaved Burst Length48
- Height Seated (Max)1.2mm
- Length10mm
- Width8mm
- RoHS StatusROHS3 Compliant
MT47H256M4SH-25E:M Overview
The mounting type for this particular electronic component is surface mount, making it easy to install and integrate into various devices. It was first published in 2014, indicating that it is a relatively new product on the market. The moisture sensitivity level (MSL) is 3, meaning that it can withstand exposure to moisture for up to 168 hours without being damaged. The ECCN code for this component is EAR99, indicating that it is not subject to any export control restrictions. The terminal finish is tin/silver/copper, a popular choice for its durability and conductivity. The peak reflow temperature is 260 degrees Celsius, ensuring that the component can withstand high temperatures during the manufacturing process. The terminal pitch is 0.8mm, providing a small but efficient space for connections. With a maximum supply voltage of 1.9V, this component is suitable for a wide range of applications. It has a memory size of 1Gb 256M x 4, making it ideal for storing large amounts of data. The interleaved burst length of 48 ensures efficient data transfer and processing. Overall, this component is a reliable and versatile choice for electronic devices.
MT47H256M4SH-25E:M Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H256M4SH-25E:M Applications
There are a lot of Micron Technology Inc.
MT47H256M4SH-25E:M Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The mounting type for this particular electronic component is surface mount, making it easy to install and integrate into various devices. It was first published in 2014, indicating that it is a relatively new product on the market. The moisture sensitivity level (MSL) is 3, meaning that it can withstand exposure to moisture for up to 168 hours without being damaged. The ECCN code for this component is EAR99, indicating that it is not subject to any export control restrictions. The terminal finish is tin/silver/copper, a popular choice for its durability and conductivity. The peak reflow temperature is 260 degrees Celsius, ensuring that the component can withstand high temperatures during the manufacturing process. The terminal pitch is 0.8mm, providing a small but efficient space for connections. With a maximum supply voltage of 1.9V, this component is suitable for a wide range of applications. It has a memory size of 1Gb 256M x 4, making it ideal for storing large amounts of data. The interleaved burst length of 48 ensures efficient data transfer and processing. Overall, this component is a reliable and versatile choice for electronic devices.
MT47H256M4SH-25E:M Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT47H256M4SH-25E:M Applications
There are a lot of Micron Technology Inc.
MT47H256M4SH-25E:M Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT47H256M4SH-25E:M More Descriptions
DRAM Chip DDR2 SDRAM 1Gbit 256Mx4 1.8V 60-Pin FBGA
DRAM, DDR2 SDRAM, 1Gb, x4, 60-ball FBGA, RoHSMicron SCT
IC DRAM 1GBIT PARALLEL 60FBGA
OEMs, CMs ONLY (NO BROKERS)
DC DC CONVERTER 3.3V 2A
DDR2 1G 256MX4 FBGA
DRAM, DDR2 SDRAM, 1Gb, x4, 60-ball FBGA, RoHSMicron SCT
IC DRAM 1GBIT PARALLEL 60FBGA
OEMs, CMs ONLY (NO BROKERS)
DC DC CONVERTER 3.3V 2A
DDR2 1G 256MX4 FBGA
The three parts on the right have similar specifications to MT47H256M4SH-25E:M.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeView Compare
-
MT47H256M4SH-25E:MSurface Mount60-TFBGAYES0°C~85°C TCBulk2014e1yesActive3 (168 Hours)60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - DDR21.7V~1.9VBOTTOM26011.8V0.8mm30MT47H256M460R-PBGA-B60Not Qualified1.9V1.8V1.7V1Gb 256M x 41VolatileSYNCHRONOUS400MHz400psDRAMParallel256MX43-STATE415ns1073741824 bitCOMMON819248481.2mm10mm8mmROHS3 Compliant--
-
Surface Mount60-FBGA-0°C~85°C TCTape & Reel (TR)2008--Obsolete3 (168 Hours)-----SDRAM - DDR21.7V~1.9V------MT47H64M8------512Mb 64M x 8-Volatile-400MHz400psDRAMParallel---15ns--------ROHS3 Compliant-
-
Surface Mount60-FBGA-0°C~85°C TCTape & Reel (TR)2005--Obsolete3 (168 Hours)-----SDRAM - DDR21.7V~1.9V------MT47H32M8B------256Mb 32M x 8-Volatile-333MHz450psDRAMParallel---15ns--------ROHS3 Compliant-
-
Surface Mount60-TFBGA-0°C~85°C TCTape & Reel (TR)---Active3 (168 Hours)-----SDRAM - DDR21.7V~1.9V-------------512M 64M x 8-Volatile-400MHz400psDRAMParallel---15ns--------ROHS3 Compliant111 Weeks
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