Alliance Memory, Inc. MT46V64M8CV-5B IT:J
- Part Number:
- MT46V64M8CV-5B IT:J
- Manufacturer:
- Alliance Memory, Inc.
- Ventron No:
- 3228707-MT46V64M8CV-5B IT:J
- Description:
- IC SDRAM 512MBIT 200MHZ 60BGA
- Datasheet:
- MT46V128M4,_64M8,_32M16 MT46V128M4, 64M8, 32M16
Alliance Memory, Inc. MT46V64M8CV-5B IT:J technical specifications, attributes, parameters and parts with similar specifications to Alliance Memory, Inc. MT46V64M8CV-5B IT:J.
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.5V~2.7V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage2.6V
- Terminal Pitch1mm
- Reach Compliance Codenot_compliant
- Base Part NumberMT46V64M8
- Pin Count60
- JESD-30 CodeR-PBGA-B60
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies2.6V
- Supply Voltage-Min (Vsup)2.5V
- Memory Size512Mb 64M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Supply Current-Max0.23mA
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization64MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.005A
- Memory Density536870912 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length12.5mm
- Width8mm
- RoHS StatusNon-RoHS Compliant
MT46V64M8CV-5B IT:J Overview
The part status of this technology is listed as obsolete, indicating that it is no longer in production or widely available. The technology itself is SDRAM - DDR, which stands for synchronous dynamic random-access memory with double data rate. The voltage supply for this technology ranges from 2.5V to 2.7V. The terminal position is located at the bottom of the device. Its JESD-30 code is R-PBGA-B60, which is a classification code used in the electronics industry. This particular technology has not been qualified, meaning it has not undergone testing and approval for use in certain applications. It is a type of volatile memory, meaning it requires constant power to retain data. The organization of this memory is 64MX8, with a memory width of 8 bits. It also has a refresh cycle of 8192.
MT46V64M8CV-5B IT:J Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V64M8CV-5B IT:J Applications
There are a lot of Micron Technology Inc.
MT46V64M8CV-5B IT:J Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The part status of this technology is listed as obsolete, indicating that it is no longer in production or widely available. The technology itself is SDRAM - DDR, which stands for synchronous dynamic random-access memory with double data rate. The voltage supply for this technology ranges from 2.5V to 2.7V. The terminal position is located at the bottom of the device. Its JESD-30 code is R-PBGA-B60, which is a classification code used in the electronics industry. This particular technology has not been qualified, meaning it has not undergone testing and approval for use in certain applications. It is a type of volatile memory, meaning it requires constant power to retain data. The organization of this memory is 64MX8, with a memory width of 8 bits. It also has a refresh cycle of 8192.
MT46V64M8CV-5B IT:J Features
Package / Case: 60-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V64M8CV-5B IT:J Applications
There are a lot of Micron Technology Inc.
MT46V64M8CV-5B IT:J Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT46V64M8CV-5B IT:J More Descriptions
DRAM Chip DDR SDRAM 512M-Bit 64Mx8 2.6V 60-Pin FBGA
DRAM, DDR SDRAM, 512Mb, x8, 60-ball FBGA, RoHSMicron SCT
DDR1 512M 64M X 8 60 BGA I TEMP LEADED
IC DRAM 512MBIT PARALLEL 60FBGA
IC DDR SDRAM 512MBIT 5NS 60FBGA
IC FLASH 1G PARALLEL 64EASYBGA
DRAM, DDR SDRAM, 512Mb, x8, 60-ball FBGA, RoHSMicron SCT
DDR1 512M 64M X 8 60 BGA I TEMP LEADED
IC DRAM 512MBIT PARALLEL 60FBGA
IC DDR SDRAM 512MBIT 5NS 60FBGA
IC FLASH 1G PARALLEL 64EASYBGA
The three parts on the right have similar specifications to MT46V64M8CV-5B IT:J.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchReach Compliance CodeBase Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeJESD-609 CodeTerminal FinishSupplier Device PackageView Compare
-
MT46V64M8CV-5B IT:JSurface Mount60-TFBGAYES-40°C~85°C TABulk2011Obsolete3 (168 Hours)60EAR99AUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.5V~2.7VBOTTOM12.6V1mmnot_compliantMT46V64M860R-PBGA-B60Not Qualified2.7V2.6V2.5V512Mb 64M x 81VolatileSYNCHRONOUS200MHz0.23mA700psDRAMParallel64MX83-STATE815ns0.005A536870912 bitCOMMON81922482481.2mm12.5mm8mmNon-RoHS Compliant-----
-
Surface Mount66-TSSOP (0.400, 10.16mm Width)-0°C~70°C TATape & Reel (TR)-Obsolete4 (72 Hours)----SDRAM - DDR2.3V~2.7V-----MT46V128M4------512Mb 128M x 4-Volatile-133MHz-750psDRAMParallel---15ns---------Non-RoHS Compliant----
-
Surface Mount60-VFBGAYES-40°C~105°C TATray2015Obsolete-60EAR99AUTO/SELF REFRESH8542.32.00.32SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmcompliant-60R-PBGA-B60-1.95V1.8V1.7V1Gb 64M x 161VolatileSYNCHRONOUS200MHz0.135mA5nsDRAMParallel64MX163-STATE1615ns0.000015A1073741824 bitCOMMON819224816248161mm9mm8mmRoHS Compliant4 Weekse1Tin/Silver/Copper (Sn/Ag/Cu)-
-
Surface Mount-YES-40°C~85°C TATray2015Obsolete3 (168 Hours)168-AUTO/SELF REFRESH-SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.5mm---S-PBGA-B168-1.95V-1.7V2Gb 64M x 321VolatileSYNCHRONOUS167MHz-5nsDRAMParallel64MX32-3215ns-2147483648 bit----0.75mm12mm12mmROHS3 Compliant12 Weeks--168-WFBGA (12x12)
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