Micron Technology Inc. MT46V32M16TG-75Z:C
- Part Number:
- MT46V32M16TG-75Z:C
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3239901-MT46V32M16TG-75Z:C
- Description:
- IC SDRAM 512MBIT 133MHZ 66TSOP
- Datasheet:
- MT46V32M16TG-75Z:C
Micron Technology Inc. MT46V32M16TG-75Z:C technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V32M16TG-75Z:C.
- Mounting TypeSurface Mount
- Package / Case66-TSSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2007
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)4 (72 Hours)
- Number of Terminations66
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)235
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.65mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT46V32M16
- Pin Count66
- JESD-30 CodeR-PDSO-G66
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies2.5V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size512Mb 32M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Access Time750ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization32MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.005A
- Memory Density536870912 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length22.22mm
- Width10.16mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MT46V32M16TG-75Z:C Overview
This product is designed for surface mount installation and can operate within a temperature range of 0°C to 70°C. It follows the JESD-609 code e0 and has an ECCN code of EAR99. The supply voltage for this product is 2.5V, with a maximum supply voltage of 2.7V. It is a DRAM memory format and has 3-STATE output characteristics. The refresh cycles for this product is 8192 and it has a length of 22.22mm.
MT46V32M16TG-75Z:C Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V32M16TG-75Z:C Applications
There are a lot of Micron Technology Inc.
MT46V32M16TG-75Z:C Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product is designed for surface mount installation and can operate within a temperature range of 0°C to 70°C. It follows the JESD-609 code e0 and has an ECCN code of EAR99. The supply voltage for this product is 2.5V, with a maximum supply voltage of 2.7V. It is a DRAM memory format and has 3-STATE output characteristics. The refresh cycles for this product is 8192 and it has a length of 22.22mm.
MT46V32M16TG-75Z:C Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V32M16TG-75Z:C Applications
There are a lot of Micron Technology Inc.
MT46V32M16TG-75Z:C Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT46V32M16TG-75Z:C More Descriptions
IC DDR SDRAM 512M 7.5NS 66TSOP
IC DRAM 512M PARALLEL 66TSOP
IC DRAM 512M PARALLEL 66TSOP
The three parts on the right have similar specifications to MT46V32M16TG-75Z:C.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusLead FreeMountNumber of PinsPbfree CodeOperating Supply VoltageNominal Supply CurrentAddress Bus WidthDensitySupply Current-MaxView Compare
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MT46V32M16TG-75Z:CSurface Mount66-TSSOP (0.400, 10.16mm Width)YES0°C~70°C TATray2007e0Obsolete4 (72 Hours)66EAR99TIN LEADAUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.3V~2.7VDUAL23512.5V0.65mmnot_compliant30MT46V32M1666R-PDSO-G66Not Qualified2.7V2.5V2.3V512Mb 32M x 161VolatileSYNCHRONOUS133MHz750psDRAMParallel32MX163-STATE1615ns0.005A536870912 bitCOMMON81922482481.2mm22.22mm10.16mmNon-RoHS CompliantContains Lead---------
-
Surface Mount90-VFBGA-0°C~70°C TATray2009-Obsolete3 (168 Hours)90EAR99-AUTO/SELF REFRESH8542.32.00.28SDRAM - Mobile LPDDR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.8mmunknownNOT SPECIFIEDMT46H16M3290-Not Qualified1.95V-1.7V512Mb 16M x 321VolatileSYNCHRONOUS166MHz5nsDRAMParallel16MX323-STATE3215ns0.00001A-COMMON819224816248161mm13mm-ROHS3 CompliantLead FreeSurface Mount90yes1.8V115mA15b512 Mb-
-
Surface Mount152-VFBGA-0°C~70°C TATape & Reel (TR)2004-Obsolete3 (168 Hours)-----SDRAM - Mobile LPDDR1.7V~1.95V-------MT46H32M32------1Gb 32M x 32-Volatile-166MHz5nsDRAMParallel---15ns---------ROHS3 Compliant---------
-
Surface Mount60-VFBGAYES-40°C~105°C TATray2008-Obsolete3 (168 Hours)60EAR99-AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--MT46H16M1660R-PBGA-B60Not Qualified1.95V1.8V1.7V256Mb 16M x 161VolatileSYNCHRONOUS166MHz5nsDRAMParallel16MX163-STATE1612ns0.00001A268435456 bitCOMMON81922481624816---ROHS3 Compliant--------0.085mA
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