Micron Technology Inc. MT46V32M16TG-5B:C
- Part Number:
- MT46V32M16TG-5B:C
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3239873-MT46V32M16TG-5B:C
- Description:
- IC SDRAM 512MBIT 200MHZ 66TSOP
- Datasheet:
- MT46V32M16TG-5B:C
Micron Technology Inc. MT46V32M16TG-5B:C technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V32M16TG-5B:C.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case66-TSSOP (0.400, 10.16mm Width)
- Number of Pins66
- Operating Temperature0°C~70°C TA
- PackagingTray
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)4 (72 Hours)
- Number of Terminations66
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - DDR
- Voltage - Supply2.5V~2.7V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)235
- Number of Functions1
- Supply Voltage2.6V
- Terminal Pitch0.65mm
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT46V32M16
- Pin Count66
- Qualification StatusNot Qualified
- Operating Supply Voltage2.6V
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies2.5V
- Supply Voltage-Min (Vsup)2.5V
- Memory Size512Mb 32M x 16
- Number of Ports1
- Nominal Supply Current215mA
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization32MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Address Bus Width15b
- Density512 Mb
- Standby Current-Max0.005A
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length22.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
MT46V32M16TG-5B:C Overview
The Moisture Sensitivity Level (MSL) of this particular electronic component is 4, indicating that it can withstand exposure to moisture for up to 72 hours without being damaged. The Terminal Pitch is 0.65mm, meaning that the distance between each terminal is 0.65 millimeters. The Reach Compliance Code for this component is not compliant, indicating that it may contain substances that are restricted by the European Union's Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations. The maximum supply voltage (Vsup) for this component is 2.7V. It has a clock frequency of 200MHz and is in the DRAM memory format with an organization of 32MX16. The Sequential Burst Length and Interleaved Burst Length are both 248, indicating the number of data bits that can be transferred in a single burst. This component is also non-compliant with the Restriction of Hazardous Substances (RoHS) directive.
MT46V32M16TG-5B:C Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.6V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V32M16TG-5B:C Applications
There are a lot of Micron Technology Inc.
MT46V32M16TG-5B:C Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
The Moisture Sensitivity Level (MSL) of this particular electronic component is 4, indicating that it can withstand exposure to moisture for up to 72 hours without being damaged. The Terminal Pitch is 0.65mm, meaning that the distance between each terminal is 0.65 millimeters. The Reach Compliance Code for this component is not compliant, indicating that it may contain substances that are restricted by the European Union's Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations. The maximum supply voltage (Vsup) for this component is 2.7V. It has a clock frequency of 200MHz and is in the DRAM memory format with an organization of 32MX16. The Sequential Burst Length and Interleaved Burst Length are both 248, indicating the number of data bits that can be transferred in a single burst. This component is also non-compliant with the Restriction of Hazardous Substances (RoHS) directive.
MT46V32M16TG-5B:C Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
66 Pins
Operating Supply Voltage:2.6V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V32M16TG-5B:C Applications
There are a lot of Micron Technology Inc.
MT46V32M16TG-5B:C Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT46V32M16TG-5B:C More Descriptions
Obsolete 3-STATE 2007 DUAL ic memory 0C~70C TA 2.5V 512Mb 215mA
IC DRAM 512MBIT PARALLEL 66TSOP
IC DDR SDRAM 512MBIT 5NS 66TSOP
IC DRAM 512MBIT PARALLEL 66TSOP
IC DDR SDRAM 512MBIT 5NS 66TSOP
The three parts on the right have similar specifications to MT46V32M16TG-5B:C.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusLead FreeFactory Lead TimeSurface MountJESD-30 CodeSupply Current-MaxMemory DensityWidthSupplier Device PackageView Compare
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MT46V32M16TG-5B:CSurface MountSurface Mount66-TSSOP (0.400, 10.16mm Width)660°C~70°C TATray2007e0noObsolete4 (72 Hours)66EAR99TIN LEADAUTO/SELF REFRESH8542.32.00.28SDRAM - DDR2.5V~2.7VDUAL23512.6V0.65mmnot_compliant30MT46V32M1666Not Qualified2.6V2.7V2.5V2.5V512Mb 32M x 161215mAVolatileSYNCHRONOUS200MHz700psDRAMParallel32MX163-STATE1615ns15b512 Mb0.005ACOMMON81922482481.2mm22.22mmNon-RoHS CompliantContains Lead--------
-
-Surface Mount60-VFBGA--40°C~105°C TATray-e1-Active-60EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.28SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mmcompliant--60Not Qualified-1.95V1.8V1.7V512Mb 32M x 161-VolatileSYNCHRONOUS166MHz5nsDRAMParallel32MX163-STATE1615ns--0.000015ACOMMON819224816248161mm9mmRoHS Compliant-4 WeeksYESR-PBGA-B600.105mA536870912 bit8mm-
-
-Surface Mount60-VFBGA--40°C~105°C TATray2015e1-Obsolete-60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mmcompliant--60--1.95V1.8V1.7V1Gb 64M x 161-VolatileSYNCHRONOUS200MHz5nsDRAMParallel64MX163-STATE1615ns--0.000015ACOMMON819224816248161mm9mmRoHS Compliant-4 WeeksYESR-PBGA-B600.135mA1073741824 bit8mm-
-
-Surface Mount---40°C~85°C TATray2015--Obsolete3 (168 Hours)168--AUTO/SELF REFRESH-SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.5mm------1.95V-1.7V2Gb 64M x 321-VolatileSYNCHRONOUS167MHz5nsDRAMParallel64MX32-3215ns-------0.75mm12mmROHS3 Compliant-12 WeeksYESS-PBGA-B168-2147483648 bit12mm168-WFBGA (12x12)
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