MT46V128M4TG-75:D

Micron Technology Inc. MT46V128M4TG-75:D

Part Number:
MT46V128M4TG-75:D
Manufacturer:
Micron Technology Inc.
Ventron No:
3239871-MT46V128M4TG-75:D
Description:
IC SDRAM 512MBIT 133MHZ 66TSOP
ECAD Model:
Datasheet:
MT46V128M4TG-75:D

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Specifications
Micron Technology Inc. MT46V128M4TG-75:D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V128M4TG-75:D.
  • Mounting Type
    Surface Mount
  • Package / Case
    66-TSSOP (0.400, 10.16mm Width)
  • Surface Mount
    YES
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tray
  • Published
    2007
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    4 (72 Hours)
  • Number of Terminations
    66
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    AUTO/SELF REFRESH
  • HTS Code
    8542.32.00.28
  • Technology
    SDRAM - DDR
  • Voltage - Supply
    2.3V~2.7V
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    235
  • Number of Functions
    1
  • Supply Voltage
    2.5V
  • Terminal Pitch
    0.65mm
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Base Part Number
    MT46V128M4
  • Pin Count
    66
  • JESD-30 Code
    R-PDSO-G66
  • Qualification Status
    Not Qualified
  • Operating Supply Voltage
    2.5V
  • Supply Voltage-Max (Vsup)
    2.7V
  • Supply Voltage-Min (Vsup)
    2.3V
  • Memory Size
    512Mb 128M x 4
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    133MHz
  • Access Time
    750ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Organization
    128MX4
  • Output Characteristics
    3-STATE
  • Memory Width
    4
  • Write Cycle Time - Word, Page
    15ns
  • Standby Current-Max
    0.005A
  • Memory Density
    536870912 bit
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Sequential Burst Length
    248
  • Interleaved Burst Length
    248
  • Height Seated (Max)
    1.2mm
  • Length
    22.22mm
  • Width
    10.16mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
MT46V128M4TG-75:D Overview
The JESD-609 Code, also known as e0, is a standard for electronic components that specifies the requirements for their design and manufacture. One of the key features of this code is the Terminal Position, which in this case is DUAL. This means that the component has two terminals, allowing for more efficient and versatile use. However, it is important to note that the Reach Compliance Code for this component is not compliant, indicating that it may contain substances that are restricted or banned by certain regulations. Additionally, the Time@Peak Reflow Temperature-Max (s) is 30, meaning that the component can withstand a maximum of 30 seconds at its peak reflow temperature. The Supply Voltage-Max (Vsup) is 2.7V and the Supply Voltage-Min (Vsup) is 2.3V, indicating the range of voltages that this component can operate within. This component has 1 port and a Memory Width of 4, which refers to the number of bits that can be accessed at one time. The Memory Density is 536870912 bit, meaning that this component has a large storage capacity. Finally, the Interleaved Burst Length is 248, indicating the number of consecutive bits that can be accessed in a single burst. Overall, the JESD-609 Code and its various specifications provide important information for engineers and manufacturers to ensure the proper use and integration of this component into electronic systems.

MT46V128M4TG-75:D Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON


MT46V128M4TG-75:D Applications
There are a lot of Micron Technology Inc.
MT46V128M4TG-75:D Memory applications.


supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT46V128M4TG-75:D More Descriptions
IC DDR SDRAM 512M 7.5NS 66TSOP
IC DRAM 512M PARALLEL 66TSOP
IC DRAM 4G PARALLEL 96FBGA
Product Comparison
The three parts on the right have similar specifications to MT46V128M4TG-75:D.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Technology
    Voltage - Supply
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Supply Voltage
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Access Time
    Memory Format
    Memory Interface
    Organization
    Output Characteristics
    Memory Width
    Write Cycle Time - Word, Page
    Standby Current-Max
    Memory Density
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Height Seated (Max)
    Length
    Width
    RoHS Status
    Lead Free
    Mount
    Number of Pins
    Pbfree Code
    Nominal Supply Current
    Address Bus Width
    Density
    Power Supplies
    Supply Current-Max
    Factory Lead Time
    Supplier Device Package
    View Compare
  • MT46V128M4TG-75:D
    MT46V128M4TG-75:D
    Surface Mount
    66-TSSOP (0.400, 10.16mm Width)
    YES
    0°C~70°C TA
    Tray
    2007
    e0
    Obsolete
    4 (72 Hours)
    66
    EAR99
    Tin/Lead (Sn/Pb)
    AUTO/SELF REFRESH
    8542.32.00.28
    SDRAM - DDR
    2.3V~2.7V
    DUAL
    235
    1
    2.5V
    0.65mm
    not_compliant
    30
    MT46V128M4
    66
    R-PDSO-G66
    Not Qualified
    2.5V
    2.7V
    2.3V
    512Mb 128M x 4
    1
    Volatile
    SYNCHRONOUS
    133MHz
    750ps
    DRAM
    Parallel
    128MX4
    3-STATE
    4
    15ns
    0.005A
    536870912 bit
    COMMON
    8192
    248
    248
    1.2mm
    22.22mm
    10.16mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT46H16M32LFCX-6:B
    Surface Mount
    90-VFBGA
    -
    0°C~70°C TA
    Tray
    2009
    -
    Obsolete
    3 (168 Hours)
    90
    EAR99
    -
    AUTO/SELF REFRESH
    8542.32.00.28
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.8mm
    unknown
    NOT SPECIFIED
    MT46H16M32
    90
    -
    Not Qualified
    1.8V
    1.95V
    1.7V
    512Mb 16M x 32
    1
    Volatile
    SYNCHRONOUS
    166MHz
    5ns
    DRAM
    Parallel
    16MX32
    3-STATE
    32
    15ns
    0.00001A
    -
    COMMON
    8192
    24816
    24816
    1mm
    13mm
    -
    ROHS3 Compliant
    Lead Free
    Surface Mount
    90
    yes
    115mA
    15b
    512 Mb
    -
    -
    -
    -
  • MT46H16M16LFBF-6 AT:H
    Surface Mount
    60-VFBGA
    YES
    -40°C~105°C TA
    Tray
    2008
    -
    Obsolete
    3 (168 Hours)
    60
    EAR99
    -
    AUTO/SELF REFRESH
    8542.32.00.24
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    -
    1
    1.8V
    0.8mm
    -
    -
    MT46H16M16
    60
    R-PBGA-B60
    Not Qualified
    -
    1.95V
    1.7V
    256Mb 16M x 16
    1
    Volatile
    SYNCHRONOUS
    166MHz
    5ns
    DRAM
    Parallel
    16MX16
    3-STATE
    16
    12ns
    0.00001A
    268435456 bit
    COMMON
    8192
    24816
    24816
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    1.8V
    0.085mA
    -
    -
  • MT46H64M32LFKQ-5 IT:C
    Surface Mount
    -
    YES
    -40°C~85°C TA
    Tray
    2015
    -
    Obsolete
    3 (168 Hours)
    168
    -
    -
    AUTO/SELF REFRESH
    -
    SDRAM - Mobile LPDDR
    1.7V~1.95V
    BOTTOM
    -
    1
    1.8V
    0.5mm
    -
    -
    -
    -
    S-PBGA-B168
    -
    -
    1.95V
    1.7V
    2Gb 64M x 32
    1
    Volatile
    SYNCHRONOUS
    167MHz
    5ns
    DRAM
    Parallel
    64MX32
    -
    32
    15ns
    -
    2147483648 bit
    -
    -
    -
    -
    0.75mm
    12mm
    12mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    12 Weeks
    168-WFBGA (12x12)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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